s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
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SI7100DN
Abstract: No abstract text available
Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package
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Si7100DN
Si7100DN-T1-E3
Si7100DN-T1-GE3
11-Mar-11
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
25lectual
18-Jul-08
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Si7100DN
Abstract: Si7100
Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package
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Si7100DN
Si7100DN-T1-E3
Si7100DN-T1-GE3
18-Jul-08
Si7100
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Si7110DN
Abstract: Si7110DN-T1-E3 Si7110DN-T1-GE3
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
18-Jul-08
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si4658
Abstract: Si4658DY
Text: SPICE Device Model Si4658DY Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4658DY
18-Jul-08
si4658
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Untitled
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Original
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PDF
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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PDF
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7407DN
Si7407DN-T1
Si7407DN-T1-E3
Si7407DN-T1-GE3
11-Mar-11
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Si7116DN
Abstract: Si7116DN-T1-E3 Si7116DN-T1-GE3
Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.0078 at VGS = 10 V 16.4 0.010 at VGS = 4.5 V 14.5 Qg (Typ.) 15 nC PowerPAK 1212-8 COMPLIANT • Synchronous Rectification • Intermediate Switch
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Original
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Si7116DN
Si7116DN-T1-E3
Si7116DN-T1-GE3
08-Apr-05
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
08-Apr-05
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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PDF
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
11-Mar-11
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Si7108DN
Abstract: Si7108DN-T1-E3 Si7108DN-T1-GE3
Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0049 at VGS = 10 V 22 0.0061 at VGS = 4.5 V 19.7 Qg (Typ.) 20 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET for
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Si7108DN
Si7108DN-T1-E3
Si7108DN-T1
11-Mar-11
Si7108DN-T1-GE3
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Si7110DN
Abstract: Si7110DN-T1-GE3 Si7110DN-T1-E3 s8058
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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PDF
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
08-Apr-05
s8058
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SI7116DN-T1-E3
Abstract: No abstract text available
Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.0078 at VGS = 10 V 16.4 0.010 at VGS = 4.5 V 14.5 Qg (Typ.) 15 nC PowerPAK 1212-8 COMPLIANT • Synchronous Rectification • Intermediate Switch
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Original
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PDF
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Si7116DN
Si7116DN-T1-E3
Si7116DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Original
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PDF
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Si7407DN
Si7407DN-T1
Si7407DN-T1-E3
Si7407DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI7110DN-T1-E3
Abstract: No abstract text available
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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PDF
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0049 at VGS = 10 V 22 0.0061 at VGS = 4.5 V 19.7 Qg (Typ.) 20 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET for
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Original
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PDF
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Si7108DN
Si7108DN-T1-E3
Si7108DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7892ADP
Si7892ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Original
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PDF
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7104DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0037 at VGS = 4.5 V 35 0.007 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ.) 23 nC • Halogen-free Option Available • TrenchFET Power MOSFETs • Low Thermal Resistance PowerPAK® Package
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Original
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Si7104DN
Si7104DN-T1-E3
Si7104DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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S-80580-Rev
Abstract: No abstract text available
Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Original
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PDF
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Si7892ADP
Si7892ADP-T1-GE3
11-Mar-11
S-80580-Rev
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Si7407DN
Abstract: No abstract text available
Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Original
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PDF
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Si7407DN
Si7407DN-T1
Si7407DN-T1-E3
Si7407DN-T1-GE3
18-Jul-08
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S-80580-Rev
Abstract: Si7892ADP
Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Original
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PDF
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Si7892ADP
Si7892ADP-T1-GE3
18-Jul-08
S-80580-Rev
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