Si4834DY
Abstract: Si4834DY-T1
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4834DY
Si4834DY-T1
S-31062--Rev.
26-May-03
|
Si4800DY
Abstract: Si4800DY-T1
Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY
|
Original
|
PDF
|
Si4800DY
Si4800DY-T1
S-31062--Rev.
26-May-03
|
Untitled
Abstract: No abstract text available
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4810DY
Si4810DY-T1
08-Apr-05
|
SI4466DY
Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)
|
Original
|
PDF
|
Si4466DY
Si4466DY-T1
S-31062--Rev.
26-May-03
|
Si4818DY
Abstract: Si4818DY-T1
Text: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V
|
Original
|
PDF
|
Si4818DY
Si4818DY-T1
S-31062--Rev.
26-May-03
|
Si4800DY
Abstract: Si4800DY-T1
Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY
|
Original
|
PDF
|
Si4800DY
Si4800DY-T1
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4830DY
Si4830DY-T1
S-31062--Rev.
26-May-06
|
Untitled
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY
|
Original
|
PDF
|
Si4416DY
Si4416DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter
|
Original
|
PDF
|
Si4804BDY
Si4804BDY-T1
S-31062--Rev.
26-May-03
|
MOSFET50
Abstract: Si4832DY Si4832DY-T1
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4832DY
Si4832DY-T1
18-Jul-08
MOSFET50
|
MOS_FET 2100
Abstract: mosfet with schottky body diode Si4810DY Si4810DY-T1
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4810DY
Si4810DY-T1
S-31062--Rev.
26-May-03
MOS_FET 2100
mosfet with schottky body diode
|
A1218
Abstract: SI4834DY Si4834DY-T1
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4834DY
Si4834DY-T1
18-Jul-08
A1218
|
Si4835DY
Abstract: Si4835DY-T1
Text: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)
|
Original
|
PDF
|
Si4835DY
Si4835DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4834BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter
|
Original
|
PDF
|
Si4834BDY
Si4834BDY-T1
S-31062--Rev.
26-May-03
|
|
|
si4800bdy
Abstract: No abstract text available
Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4800BDY
|
Original
|
PDF
|
Si4800BDY
Si4800BDY-T1
S-31062--Rev.
26-May-03
|
Untitled
Abstract: No abstract text available
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
|
Original
|
PDF
|
Si4834DY
Si4834DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY
|
Original
|
PDF
|
Si4800DY
Si4800DY-T1
08-Apr-05
|
Si4416DY
Abstract: Si4416DY-T1
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY
|
Original
|
PDF
|
Si4416DY
Si4416DY-T1
S-31062--Rev.
26-May-03
|
Si4835BDY
Abstract: Si4835BDY-T1
Text: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches
|
Original
|
PDF
|
Si4835BDY
Si4835BDY-T1
S-31062--Rev.
26-May-03
|
Untitled
Abstract: No abstract text available
Text: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V
|
Original
|
PDF
|
Si4818DY
Si4818DY-T1
18-Jul-08
|
Si4810DY
Abstract: Si4810DY-T1
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4810DY
Si4810DY-T1
18-Jul-08
|
SI4466DY
Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)
|
Original
|
PDF
|
Si4466DY
Si4466DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
|
Original
|
PDF
|
Si4832DY
Si4832DY-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: Pgttö G E C P L E S S E Y JtK , n uH iün-Hi ti ADVANCE INFORMATION D S31062.4 MV1820 VIDEO PROGRAMME DELIVERY CONTROL INTERFACE CIRCUIT The MV1820 is a high speed CMOS receiver for Programme Delivery Control PDC messages broadcast in W orld System Teletext (W ST) Format Two Broadcast
|
OCR Scan
|
PDF
|
S31062
MV1820
MV1820
|