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    SI4467DY Price and Stock

    onsemi SI4467DY

    - Bulk (Alt: SI4467DY)
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    Avnet Americas SI4467DY Bulk 4 Weeks 378
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    Fairchild Semiconductor Corporation SI4467DY

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    Bristol Electronics SI4467DY 2,042
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    Quest Components SI4467DY 2,202
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    SI4467DY 1,633
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    Rochester Electronics SI4467DY 1,009 1
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    South Electronics SI4467DY
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    Vishay Siliconix SI4467DY

    13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET
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    Quest Components SI4467DY 197
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    SI4467DY 67
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    Velocity Electronics SI4467DY 194
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    Vishay Intertechnologies SI4467DY

    13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET
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    Quest Components SI4467DY 156
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    SI4467DY 84
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    Microsemi Corporation SI4467DY

    13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4467DY 25
    • 1 $3.0016
    • 10 $2.2512
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    Find more SI4467DY price and stock on Findchips.com

    SI4467DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4467DY Fairchild Semiconductor P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    Si4467DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4467DY Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4467DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -12V, Single, Pkg Style SO-8 Scan PDF
    SI4467DY_NL Fairchild Semiconductor P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    Si4467DY SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4467DY-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF

    SI4467DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74222

    Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4451DY Si4467DY Si4451DY-T1-E3 Si4467DY-T1-E3 Si4451DY-T1 Si4467DY-T1 31-Oct-06 74222

    71468

    Abstract: Si4467DY
    Text: SPICE Device Model Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4467DY 07-May-01 71468

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z Si4467DY
    Text: Si4467DY P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF Si4467DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    Si4467DY

    Abstract: No abstract text available
    Text: Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V "12 0.014 @ VGS = –2.5 V "11 0.020 @ VGS = –1.8 V "9 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si4467DY S-59632--Rev. 12-Oct-98

    Si4467DY

    Abstract: 8237 diode
    Text: Si4467DY P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF Si4467DY 8237 diode

    AS 74102

    Abstract: 7626 AN609 Si4467DY 74102
    Text: Si4467DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4467DY AN609 01-Sep-05 AS 74102 7626 74102

    Si4467DY

    Abstract: No abstract text available
    Text: Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V "12 0.014 @ VGS = –2.5 V "11 0.020 @ VGS = –1.8 V "9 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si4467DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4467DY P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF Si4467DY

    Untitled

    Abstract: No abstract text available
    Text: Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V "12 0.014 @ VGS = –2.5 V "11 0.020 @ VGS = –1.8 V "9 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si4467DY 08-Apr-05

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


    Original     		PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    SDCFB

    Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		PDF SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    P-Channel TrenchFET Power MOSFET SOT-23

    Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
    Text: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other


    Original     		PDF Si4467DY Si6465DQ Si4463DY Si6969DQ Si9434DY Si9433DY Si4425DY Si4435DY-RevA Si9430DY Si9435DY P-Channel TrenchFET Power MOSFET SOT-23 TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SMC1602

    Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
    Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3


    Original     		PDF CS8406 RA300 RA302 1/16W SMC1602 SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900

    HTGB

    Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
    Text: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912

    R9810

    Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 R9810 HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335

    0858T

    Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
    Text: Siliconix Vishay MOSFETs and Standard Products Visit VishayÕs Website at www.vishay.com LITTLE FOOT¨ Power MOSFETs P-Channel MOSFETs LITTLE FOOT ¨ power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other


    Original     		PDF Si4467DY TN0200T TP0101T TN0200TS TP0610T TN0201T VP0610T VN0605T 2N7002 TN2460T 0858T VP0610T siliconix catalog dual j-fet MMBFJ176

    Untitled

    Abstract: No abstract text available
    Text: Si4467DY V1SHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product s s s SO-8 D D D D P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) SYMBOL LIMIT Drain-Source Voltage PARAMETER V DS -1 2 Gate-Source Voltage VGS ±8 UNIT V Ta = 25°C


    OCR Scan     		PDF Si4467DY S2SM735 DD17flflT