A1317
Abstract: AS29 120PI
Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )
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AS29F002
256KX8
256Kx8
mo2B-120T1C
AS29F002B-120T1I
AS29F002T1-120T1C
AS29F002T1-120T1I
32-pin
AS29F002B-55PC
AS29F002B-70PC
A1317
AS29
120PI
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Untitled
Abstract: No abstract text available
Text: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t
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29F002T
-90SI
-I20S
S29F002T
-120SI
000011b
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Untitled
Abstract: No abstract text available
Text: H ig h P e rfo rm a n ce •■ 2S6KX8 II AS29F002 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash EEPROM Preliminary information Features • O r g a n iz a t io n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 5 m A m a x im u m read current
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AS29F002
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Untitled
Abstract: No abstract text available
Text: A High Perform,u h e I S6k X K S V C M O S I l.isli M P R O M VS 21 1(1 Z 1S6Kx8 CMOS Hush M PNOM Preliminary information Features • O r g a n iz a t i o n : 2 5 6 K X 8 1 L o w r p o w e r c o n s u m p t io n • S e c to r a r c h it e c t u r e - 4 0 m A m a x im u m read cu rren t
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29F002B
120TC
AS29F002T
I20TI
F002B
FO02B
120LI
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29F002T90
Abstract: No abstract text available
Text: Prelim inary inform ation Features • Organization: 256KX8 • Sector architecture • Low power consumption - O ne 16K; tw o 8K; o n e 32K; a n d th re e 64K b y te sectors - B oot co d e sector arch itectu re— T to p o r B (b o tto m ) - Erase any c o m b in a tio n o f sectors o r full ch ip
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256KX8
29F002T90
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Untitled
Abstract: No abstract text available
Text: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current
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AS29F002T-120PC
S29F002T-120P
-I20T
S29F002B
-120P
1-40008-A
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S555B
Abstract: .5555b 29F002B FLASH MEMORY 29F 29F002T S29F002T-90PC S-555B
Text: Preliminary information Features • O rganization: 2 5 6 K x 8 • Sector architecture - O ne 16K; tw o 8K; one 32K; an d three 64K byte sectors - Boot code sector architecture— T top o r B (bottom ) - Erase any com bination o f sectors o r full chip
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29F002B
-120PI
S29F002T-120PC
AS29F002T-120P1
S29F002B
-55PC
S29F002T-55PC
1-40008-A.
S555B
.5555b
FLASH MEMORY 29F
29F002T
S29F002T-90PC
S-555B
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