Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/11/2002
PM0547
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winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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29F002T
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/14/2001
PM0547
29F002T
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
30ms--
80us--
100us
PM0547
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Untitled
Abstract: No abstract text available
Text: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%
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MX29F022/022NT/B
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
PM0556
JUN/14/2001
JUN/11/2002
NOV/11/2002
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29f002
Abstract: No abstract text available
Text: MX29F002/002NT/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002NT/B
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
n02/002N
MX29F002/002NT/B
NOV/11/2002
PM0547
29f002
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fujitsu 29LV160B
Abstract: 29F800B 29LV160B 29F160B m29f800bb
Text: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright 1995.2002:
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lanSC520
D-79200
D-79206
lanSC520
fujitsu 29LV160B
29F800B
29LV160B
29F160B
m29f800bb
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HY29F002
Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Text: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current
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HY29F002
S-128
HY29F002
29F002T
hyundai tv hy 22 f circuit
29F002
HY29F002T
PDIP32
PLCC32
TSOP32
hyundai tv circuits
P55i
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MX29F022T
Abstract: No abstract text available
Text: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%
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MX29F022/022N
55/70/90/120ns
-30mA
16K-Byte
32K-Byte
64K-Byte
DEC/21/1999
PM0556
JUN/14/2001
MX29F022T
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Untitled
Abstract: No abstract text available
Text: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%
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MX29F002/
MX29F002N
70/90/120ns
16K-Byte
32K-Byte
64K-Byte
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M29F002
Abstract: M29F002B M29F002T PDIP32 PLCC32 TSOP32 HFNC
Text: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29F002T M29F002B 2 Mb x8, Block Erase SIN G LE SUPPLY FLASH M EM O RY • 5V ± 1 0 % SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1 0 |iS typical
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OCR Scan
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M29F002T
M29F002B
M29F002T:
M29F002B
M29F002T,
TSOP32
M29F002
PDIP32
PLCC32
HFNC
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1N914
Abstract: M29F002T PDIP32 PLCC32
Text: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical
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OCR Scan
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PDF
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M29F002T
PDIP32
PLCC32-
PLCC32
1N914
M29F002T
PDIP32
PLCC32
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1N914
Abstract: M29F002T PDIP32 PLCC32
Text: w , SGS-THOMSON M 29F002T k7 #» RitlDÊlMIlilLIKËinSMQtÊS 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical
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OCR Scan
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PDF
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M29F002T
PDIP32
PLCC32-
PLCC32
1N914
M29F002T
PDIP32
PLCC32
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M29F002T
Abstract: PDIP32 PLCC32
Text: w - SCS-THOMSON k7 # . IM [MDiHI ènnMPM]D(§Ii M 29F002T 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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OCR Scan
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M29F002T
PDIP32
M29F002T
PDIP32
PLCC32
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A1317
Abstract: AS29 120PI
Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )
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AS29F002
256KX8
256Kx8
mo2B-120T1C
AS29F002B-120T1I
AS29F002T1-120T1C
AS29F002T1-120T1I
32-pin
AS29F002B-55PC
AS29F002B-70PC
A1317
AS29
120PI
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P55i
Abstract: No abstract text available
Text: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and
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HY29F002
32-Pin
HY29F002
P55i
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Untitled
Abstract: No abstract text available
Text: — 29F002T/Am29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands
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OCR Scan
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PDF
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Am29F002T/Am29F002B
32-pin
F002T/Am29
F002B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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OCR Scan
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PDF
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Am29F002/Am29F002N
29F002
29F002N
29F002/Am
29F002N
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ym 238
Abstract: hy 214 29F002
Text: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current
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OCR Scan
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PDF
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AS29F002
256KX8
256Kx8
ym 238
hy 214
29F002
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FPT-32P-M24
Abstract: F002B
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M 256K x 8 BIT M B M 2 9 F 0 0 2 T C -5 5 -7 0 -9 0 /M B M 2 9 F 0 0 2 B C -5 5 .-7 0 -9 0 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase
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OCR Scan
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PDF
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MBM29
F002TC-55/-70/-90/M
BM29F002BC-55/-70/-90
32-pin
9F002TC-55/-7O/-9O/MBM29F002BC-55/-7O/-9O
LCC-32P-M02)
C32021S-2C-4
FPT-32P-M24
F002B
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Untitled
Abstract: No abstract text available
Text: 29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES • • • • • • |_^ ^ _ Single Power Supply Supports 5-V ±10% Read/Write Operation O rganization:. 262144B y8 Bits Array-Blocking Architecture - One 16K-Byte Protected-Boot Sector
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OCR Scan
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PDF
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TMS29F002T,
TMS29F002B
SMJS84B
TMS29F002T/B
2097152-bit)
organiz262144
SMJS84S
13-A17
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Untitled
Abstract: No abstract text available
Text: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes 29F002T M29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical
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OCR Scan
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PDF
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M29F002T
M29F002B
M29F002T,
TSOP32
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29F002N
Abstract: No abstract text available
Text: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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OCR Scan
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PDF
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Am29F002/Am29F002N
29F002/Am
29F002N
29F002N
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Untitled
Abstract: No abstract text available
Text: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t
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OCR Scan
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29F002T
-90SI
-I20S
S29F002T
-120SI
000011b
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