Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. +as 2 .5 -C l3 High Gain |S21eP = 12dB Typ. Low Noise Figure NF = 2.3dB (Typ.), f= lG H z + CX25 1.3-ais High f'p -HO dd +I E£ fp = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)
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2SC3011
S21eP
SC-59
21el2
--j50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5321 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC532 1 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series • • Low Noise Figure High Gain 2.1 ± 0.1 NF = 1.4dB (f = 2GHz) |S21eP = 10dB (f=2GHz)
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2SC5321
2SC532
16GHz
S21eP
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2SC2753
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2753 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATION. • Low Noise Figure, High Gain NF = 1.5dB, |S21e|2 = 16dB f=500M Hz NF = 1.7dB, |S21eP = 10.5dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2753
S21eP
SC-43
--j50
2SC2753
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Untitled
Abstract: No abstract text available
Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)
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HN3C17FU
16GHz
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Untitled
Abstract: No abstract text available
Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1
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2SC5086
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Untitled
Abstract: No abstract text available
Text: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)
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2SC301
SC-59
S21eP
2SC3011
--j50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 1 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lG H z ± 0.1 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C)
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2SC4321
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 5 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain. • N F=1.8dB , |S2 lel2= 7-5dB f=2GHz ± 0.1 1 . 2 5 Í 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4325
Na200
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.5 2 .5 -0 .3 + 0.25 . 1 .5 -0 .1 5 Low Noise Figure, High Gain. N F = l.ld B , |S2lel2 = H dB f=lG H z
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2SC3606
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)
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HN3C18FU
16GHz
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Untitled
Abstract: No abstract text available
Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)
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HN3C17FU
16GHz
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .
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i707L
T-31-n
2SC377
1947B
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz
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AT-00570
AT-00570
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2SC3357
Abstract: 2sc3355 NE8563S
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is
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NE856
OT-89)
2SC3357
2sc3355
NE8563S
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Untitled
Abstract: No abstract text available
Text: 2SC3099 5ILIC0N NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q5 ;'.h -0.3 • •t 0.25 Low Noise Figure. I'. 1 'i N F = 1.7dB, |S21e|2= 15dB f= 500MHz N F = 2.5dB, 3 |S21el2 = 9 .5 d B (f= lG H z )
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2SC3099
500MHz)
S21el2
SC-59
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LV 1084
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL P LA N A R T Y P E T R A N SIST O R 2 § Q £ } Q Q Q V H F - U H F B A N D L O W N O IS E A M P L IF IE R A P P L IC A T IO N S . • U n it in mm Low N oise Figure, H igh G ain. N F = l .l d B , |S 2 i e í ¿ = 1 3 d B f= lG I Í z
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SC-59
2SC5089
LV 1084
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2SC2644
Abstract: No abstract text available
Text: 2SC2644 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR V H F - U H F B A N D W ID E B A N D A M P LIFIE R APPLIC A TIO N S. • • • U n i t in m m High Gain Low IMD frr = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2644
SC-43
S21eJ!
2SC2644
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Untitled
Abstract: No abstract text available
Text: 2SC5090 SILIC0N NPN EPITAXIAL PLAN AR t y p e t r a n s is t o r U nit in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, High Gain. N F = l.ld B , |S2iel2 = 13dB f=lG H z M A X IM U M R ATIN G S (Ta = 25°C)
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2SC5090
SC-70
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2SC1365
Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
Text: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz
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b4274m
0G0547Ã
NE74100
NE74113
NE74114
NE741
NE74100)
NE74114
2SC1365
2SC1252
2SC*1365
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 2 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 7-5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4322
SC-59
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 0 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 15dB f=lG H z 'S M A X IM U M RATINGS (Ta = 25°C)
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2SC4320
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5109 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 09 U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5110
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5108 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 1 0 8 U n it in mm ± 1.6 0.2 .0810.1 MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC V v CEO 20 10 Emitter-Base Voltage V• 111 i.' i> /‘\ J_»W 3 V Base Current
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2SC5108
--j50
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