2SC1365
Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
Text: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz
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b4274m
0G0547Ã
NE74100
NE74113
NE74114
NE741
NE74100)
NE74114
2SC1365
2SC1252
2SC*1365
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74113
Abstract: NE741
Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and V H F amplifiers. Us low distortion and noise figures make it an excellent choice for
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NE74100
NE74113
NE74114
NE741
NE74100)
IL-S-19500
NE74100,
NE74113,
NE74114
74113
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SN 74114
Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for
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NE74100
NE74113
NE74114
NE741
NE74100)
NE74114
procedur64
4S7S25
00L573L
SN 74114
2SC1365
ta 5732
2SC1252
s735
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2SC1365
Abstract: NE741 2sc1252 74113 NE74100
Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low
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NE74100
NE74113
NE74114
NE741
E74100)
NE74114
E74100,
NE74100
2SC1365
2sc1252
74113
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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