npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
May-29-2001
br 2222 npn
SMBT2222A
SMBT2907A
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h22e
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
h22e
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
BCW66
SMBT2907AW
MARKING s1P
smbt2222a sot23 marking code
S1p MARKING
BCW66
77 ic marking code
transistor marking code 24
24 marking code transistor
transf
SMBT2222A SOT23
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
npn 2222 transistor
MMBT2222A
SMBT2222A
SMBT2907A
MARKING s1P
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Untitled
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
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CHT2222AGP
Abstract: transistor s1p
Text: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT2222AGP
OT-23
OT-23)
600mA)
CHT2222AGP
transistor s1p
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2SD882P
Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200
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SC-62
2SD882P
ch3904
marking J1 sot-23
T05 sot-23
sot-23 marking NE
MARKING J3 SOT-23
marking NB SOT-23
CHT846BWPTR
LT 723 ic
marking J2 sot-23
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2222 NPN
Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222 NPN
br 2222 npn
npn 2222
2222a
2222
2907 pnp
2222 A
DSA0032624
equivalent of 2222 NPN
Q68000-A6473
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2222a
Abstract: br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222a
br 2222 npn
2222 A
npn 2222
Q68000-A6473
Q68000-A6481
tr 2222
2222av
marking code sot-23 697
NPN transistors sot-23 26
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NB SOT-23 NPN
Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to
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CH3904T
CHT2222T
2SC4097
CH3904W
CHT05
CHT42
CHTA42L
CHT44
2SC2411K
2SC2412K
NB SOT-23 NPN
ch3904
CHT44
transistor marking s1a
transistor s1p
marking 1P sot-23
T05 sot-23
transistor marking t05
transistor C4G sot-23
39 MARKING SOT223
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CHT2222APT
Abstract: transistor s1p
Text: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT2222APT
OT-23
OT-23)
600mA)
200ns
CHT2222APT
transistor s1p
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transistor s1p
Abstract: CHT4401PT SOT23 timer ic S1p MARKING
Text: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT4401PT
OT-23
600mA)
200ns
transistor s1p
CHT4401PT
SOT23 timer ic
S1p MARKING
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AD8051
Abstract: AD8052 AD8054 RU-14
Text: a FEATURES Low Cost Single AD8051 , Dual (AD8052) and Quad (AD8054) Voltage Feedback Architecture Fully Specified at +3 V, +5 V and ؎5 V Supplies Single Supply Operation Output Swings to Within 25 mV of Either Rail Input Voltage Range: –0.2 V to +4 V; VS = +5 V
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AD8051)
AD8052)
AD8054)
AD8051/AD8052)
AD8051
OT-23-5
AD8052
AD8054
TSSOP-14
RU-14
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s1P SOT23
Abstract: S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE
Text: b3E J> m _ bbSB'lEM GQ7427M 72Ö « S I C 3 NAPC/PHILIPS BBY31 J SEniCOND FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T VARIABLE CAPACITANCE DIODE S ilicon planar variable capacitance diode in a m icro m in ia tu re envelope. It is intended fo r e le ctro n ic
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GQ7427M
BBY31
OT-23.
s1P SOT23
S1p MARKING
BBY31
MARKING S1P
SOT23 DIODE marking CODE 28
"Variable Capacitance Diode"
VARIABLE CAPACITANCE DIODE
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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s1P SOT23
Abstract: BBY39 S2p SOT-23 SOD-23 BB219 Diode SM 48 smd code BBY31 175 sot-23 XL SOT23 am SMD sot23
Text: Variable Capacitance SM D’ Diodes Variable Capacitance SMD Diodes Description Mechanical Data Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated
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T-143
BB804
BBY31
BBY39
BBY40
BBY42
BBY62
OT-23
OT-143
OD-80C
s1P SOT23
S2p SOT-23
SOD-23
BB219
Diode SM 48 smd code
BBY31
175 sot-23
XL SOT23
am SMD sot23
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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Q68000-A6481
Q68000-A6473
OT-23
2222/A
fi235bD5
0155S2S
a235b05
012552b
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2222A
Abstract: npn 2222 2222 A 2222 kn a MARKING s1P Q68000-A6481 kn sot23 BT2222
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2211/t
2222A
npn 2222
2222 A
2222 kn a
MARKING s1P
kn sot23
BT2222
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702 TRANSISTOR npn
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
Text: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING
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bbS3T31
BFR106
702 TRANSISTOR npn
RF NPN POWER TRANSISTOR C 10-12 GHZ
BFR106
UBB773
transistor t 2180
IC 1496 function
L7E transistor
22741
transistor s1p
8115, transistor
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