h22e
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
h22e
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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PDF
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
May-29-2001
br 2222 npn
SMBT2222A
SMBT2907A
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PDF
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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PDF
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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Original
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
BCW66
SMBT2907AW
MARKING s1P
smbt2222a sot23 marking code
S1p MARKING
BCW66
77 ic marking code
transistor marking code 24
24 marking code transistor
transf
SMBT2222A SOT23
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PDF
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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PDF
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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Original
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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PDF
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Untitled
Abstract: No abstract text available
Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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FJX2222A
325mW
OT-323
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PDF
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transistor s1p
Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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Original
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FJX2222A
325mW
OT-323
transistor s1p
MARKING S1P
S1P transistor
FJX2222A
ESBC
Fairchild dual NPN silicon transistor
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PDF
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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Original
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
npn 2222 transistor
MMBT2222A
SMBT2222A
SMBT2907A
MARKING s1P
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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Original
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
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PDF
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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PDF
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2SD882P
Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200
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Original
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SC-62
2SD882P
ch3904
marking J1 sot-23
T05 sot-23
sot-23 marking NE
MARKING J3 SOT-23
marking NB SOT-23
CHT846BWPTR
LT 723 ic
marking J2 sot-23
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PDF
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2222 NPN
Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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Original
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Q68000-A6481
Q68000-A6473
OT-23
2222 NPN
br 2222 npn
npn 2222
2222a
2222
2907 pnp
2222 A
DSA0032624
equivalent of 2222 NPN
Q68000-A6473
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PDF
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2222a
Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222a
npn 2222
2222 NPN
br 2222 npn
2222 A
2222
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PDF
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NB SOT-23 NPN
Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to
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CH3904T
CHT2222T
2SC4097
CH3904W
CHT05
CHT42
CHTA42L
CHT44
2SC2411K
2SC2412K
NB SOT-23 NPN
ch3904
CHT44
transistor marking s1a
transistor s1p
marking 1P sot-23
T05 sot-23
transistor marking t05
transistor C4G sot-23
39 MARKING SOT223
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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OCR Scan
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Q68000-A6481
Q68000-A6473
OT-23
2222/A
fi235bD5
0155S2S
a235b05
012552b
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PDF
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2222A
Abstract: npn 2222 2222 A 2222 kn a MARKING s1P Q68000-A6481 kn sot23 BT2222
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) Pin Configuration
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OCR Scan
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Q68000-A6481
Q68000-A6473
OT-23
2211/t
2222A
npn 2222
2222 A
2222 kn a
MARKING s1P
kn sot23
BT2222
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PDF
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s1P SOT23
Abstract: S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE
Text: b3E J> m _ bbSB'lEM GQ7427M 72Ö « S I C 3 NAPC/PHILIPS BBY31 J SEniCOND FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T VARIABLE CAPACITANCE DIODE S ilicon planar variable capacitance diode in a m icro m in ia tu re envelope. It is intended fo r e le ctro n ic
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OCR Scan
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GQ7427M
BBY31
OT-23.
s1P SOT23
S1p MARKING
BBY31
MARKING S1P
SOT23 DIODE marking CODE 28
"Variable Capacitance Diode"
VARIABLE CAPACITANCE DIODE
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PDF
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CHT2222AGP
Abstract: transistor s1p
Text: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT2222AGP
OT-23
OT-23)
600mA)
CHT2222AGP
transistor s1p
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PDF
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OCR Scan
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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PDF
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transistor s1p
Abstract: S1P transistor S1p MARKING F1 SOT-323
Text: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage
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Original
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FJX2222A
OT-323
transistor s1p
S1P transistor
S1p MARKING
F1 SOT-323
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PDF
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MARKING s1P
Abstract: FJX2222A transistor s1p
Text: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Original
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FJX2222A
325mW
OT-323
MARKING s1P
FJX2222A
transistor s1p
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PDF
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MARKING s1P
Abstract: FJX2222A transistor s1p
Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Original
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FJX2222A
325mW
OT-323
75opment.
MARKING s1P
FJX2222A
transistor s1p
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PDF
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