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    S1116 Search Results

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    S1116 Price and Stock

    MEC Switches A/S 1KS1116

    SQUARE TACT SWITCH CAP FR WHT
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    DigiKey 1KS1116 Bulk 5,029 1
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    Newark 1KS1116 Bulk 55 1
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    PanJit Group PZS1116BES_R1_00001

    SILICON ZENER DIODE
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    DigiKey PZS1116BES_R1_00001 Cut Tape 4,965 1
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    Ozdisan Elektronik PZS1116BES_R1_00001
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    Essentra Components S11-16A

    HOLE PLUG SHT METAL .688" BLACK
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    DigiKey S11-16A Box 4,962 1
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    MEC Switches A/S 1S11-16.0

    CAP TACTILE ROUND CLEAR
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    DigiKey 1S11-16.0 Tube 2,813 1
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    Newark 1S11-16.0 Bulk 244 10
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    MEC Switches A/S 1IS11-16.0

    CAP TACTILE ROUND CLEAR
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    DigiKey 1IS11-16.0 Bulk 699 1
    • 1 $0.35
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    • 100 $0.3182
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    S1116 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1116 Comus Group of Companies Tip-Over Module - Mercury Contacts Original PDF
    S1116 Unknown NEIGUNGSSCHALTER MIT OEFFNER KONTAKT 13A Original PDF

    S1116 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUM50P10-42 2002/95/EC O-263 SUM50P10-42-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiA929DJ

    Abstract: No abstract text available
    Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual


    Original     		PDF SiA929DJ SC-70-6 SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIR662

    Abstract: No abstract text available
    Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View


    Original     		PDF SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR774DP 11-Mar-11

    SUM50P10-42

    Abstract: SUM50P10-42-E3
    Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUM50P10-42 2002/95/EC O-263 SUM50P10-42-E3 11-Mar-11 SUM50P10-42 SUM50P10-42-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4833BDY Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.068 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4833BDY 2002/95/EC Si4833BDY-T1-GE3 11-Mar-11

    63304

    Abstract: No abstract text available
    Text: SiS376DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0058 at VGS = 10 V 35 0.0084 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS376DN 2002/95/EC SiS376DN-T1-GE3 11-Mar-11 63304

    SIR172DP

    Abstract: No abstract text available
    Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR172DP 2002/95/EC SiR172DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA444DJT SC-70-6L-Single SC-70 2002/95/EC SiA444DJT-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25


    Original     		PDF SQM25N15-52 AEC-Q101 2002/95/EC O-263 O-263 SQM25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Triac bt 808 600C

    Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
    Text: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Triac bt 808 600C w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS782DN 11-Mar-11

    si47

    Abstract: si4774
    Text: SPICE Device Model Si4774DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4774DY 11-Mar-11 si47 si4774

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual


    Original     		PDF SiA929DJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    socket s1

    Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND


    Original     		PDF S1-90 S1-82 S1-79 S1-77 TTL10 TTL12 TTL14 TTL18 TTL44 SGND/D15 socket s1 diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR172DP 2002/95/EC SiR172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    crimper CT 3508

    Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
    Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.


    Original     		PDF

    SUD45P04-16

    Abstract: No abstract text available
    Text: SUD45P04-16P Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0162 at VGS = - 10 V - 36 0.0230 at VGS = - 4.5 V - 24 Qg (Typ.) 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P04-16P 2002/95/EC O-252 SUD45P04-16P-GE3 11-Mar-11 SUD45P04-16

    057 98B

    Abstract: No abstract text available
    Text: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V


    Original     		PDF SiZ300DT 2002/95/EC 11-Mar-11 057 98B

    Untitled

    Abstract: No abstract text available
    Text: SiP32411 Vishay Siliconix 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES The SiP32411 is a slew rate controlled load switch that is designed for 1.1 V to 5.5 V operation. The device guarantees low switch on-resistance at 1.2 V input. It features a controlled soft-on slew rate of typical


    Original     		PDF SiP32411 11-Mar-11

    1117G

    Abstract: No abstract text available
    Text: Package Polarity z o S. £ <0 » Device Super-bright Red Rl/ Orange (E / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber IA) Bright Yellow (T) Bright Green IF) Package Xp= 6 6 0 nm \ p = 6 5 5 /6 9 5 nm Xp = 6 3 8 /6 1 0 nm \ p = 5 9 0 /5 8 5 nm


    OCR Scan     		PDF CSS-101 CSS-1019A 16D-21 16E-1 CSS-1513 1117G