Untitled
Abstract: No abstract text available
Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7463ADP
2002/95/EC
Si7463ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUM50P10-42
2002/95/EC
O-263
SUM50P10-42-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SiA929DJ
Abstract: No abstract text available
Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual
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SiA929DJ
SC-70-6
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SIR662
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View
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Original
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR662
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR774DP
11-Mar-11
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PDF
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SUM50P10-42
Abstract: SUM50P10-42-E3
Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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Original
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SUM50P10-42
2002/95/EC
O-263
SUM50P10-42-E3
11-Mar-11
SUM50P10-42
SUM50P10-42-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4833BDY Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.068 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET
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Si4833BDY
2002/95/EC
Si4833BDY-T1-GE3
11-Mar-11
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PDF
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63304
Abstract: No abstract text available
Text: SiS376DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0058 at VGS = 10 V 35 0.0084 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SiS376DN
2002/95/EC
SiS376DN-T1-GE3
11-Mar-11
63304
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PDF
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SIR172DP
Abstract: No abstract text available
Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch
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SiR172DP
2002/95/EC
SiR172DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA444DJT
SC-70-6L-Single
SC-70
2002/95/EC
SiA444DJT-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25
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SQM25N15-52
AEC-Q101
2002/95/EC
O-263
O-263
SQM25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Triac bt 808 600C
Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
Text: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .
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element-14
Triac bt 808 600C
w2a smd transistor
omron 8567
21EN15T044
awm 2919 pinout cable specification
HT 25-19 transistor
movement sensor pir cd 208
Ultrasonic Atomizing Transducer
Balluff ROTARY ENCODER
jhd 16a
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS782DN
11-Mar-11
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PDF
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si47
Abstract: si4774
Text: SPICE Device Model Si4774DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si4774DY
11-Mar-11
si47
si4774
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Untitled
Abstract: No abstract text available
Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual
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SiA929DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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socket s1
Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND
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S1-90
S1-82
S1-79
S1-77
TTL10
TTL12
TTL14
TTL18
TTL44
SGND/D15
socket s1
diode s1 61
diode s1 77
diode s1 85
S124
040 d10
diode s1
diode s1 74
HW-133-PQ160
S1 18
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Untitled
Abstract: No abstract text available
Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7463ADP
2002/95/EC
Si7463ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch
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SiR172DP
2002/95/EC
SiR172DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC
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SiR882ADP
2002/95/EC
SiR882ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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crimper CT 3508
Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.
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SUD45P04-16
Abstract: No abstract text available
Text: SUD45P04-16P Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0162 at VGS = - 10 V - 36 0.0230 at VGS = - 4.5 V - 24 Qg (Typ.) 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD45P04-16P
2002/95/EC
O-252
SUD45P04-16P-GE3
11-Mar-11
SUD45P04-16
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PDF
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057 98B
Abstract: No abstract text available
Text: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V
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SiZ300DT
2002/95/EC
11-Mar-11
057 98B
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP32411 Vishay Siliconix 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES The SiP32411 is a slew rate controlled load switch that is designed for 1.1 V to 5.5 V operation. The device guarantees low switch on-resistance at 1.2 V input. It features a controlled soft-on slew rate of typical
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SiP32411
11-Mar-11
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1117G
Abstract: No abstract text available
Text: Package Polarity z o S. £ <0 » Device Super-bright Red Rl/ Orange (E / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber IA) Bright Yellow (T) Bright Green IF) Package Xp= 6 6 0 nm \ p = 6 5 5 /6 9 5 nm Xp = 6 3 8 /6 1 0 nm \ p = 5 9 0 /5 8 5 nm
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OCR Scan
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CSS-101
CSS-1019A
16D-21
16E-1
CSS-1513
1117G
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PDF
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