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    Switchcraft Conxall CARAS1007984

    CBL ASSY 2MM PLUG-CBL RND 6.6'
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    CBL ASSY 2MM PLUG-CBL RND 6.6'
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    S10079 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    Si1499DH

    Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH OT-363 SC-70 2002/95/EC 18-Jul-08 P-Channel mosfet sot-363 Si1499DH-T1-E3

    Si1926DL-T1-GE3

    Abstract: SI1926DL-T1-E3
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08

    si1965

    Abstract: No abstract text available
    Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a


    Original     		PDF Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 18-Jul-08 si1965

    si1869dh-t1-ge3

    Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original     		PDF Si1869DH SC70-6 6124lectual 18-Jul-08 si1869dh-t1-ge3 Si1869DH-T1-E3 si1869 620td

    Untitled

    Abstract: No abstract text available
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH OT-363 SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI1926DL-T1-E3

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    S10011

    Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
    Text: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115

    Marking 7133-1

    Abstract: 7133-1 Si1022R-T1-E3 Si1022R-T1-GE3 71331 si1022rt1ge3 SC-75A Si1022R
    Text: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si1022R SC-75A OT-416) 2002/95/EC 18-Jul-08 Marking 7133-1 7133-1 Si1022R-T1-E3 Si1022R-T1-GE3 71331 si1022rt1ge3 SC-75A

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1958DH 2002/95/EC OT-363 SC-70 Si1958DH-T1-E3 Si1958DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a


    Original     		PDF Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a VDS (V) 20 Qg (Typ.) 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1958DH 2002/95/EC OT-363 SC-70 Si1958DH-T1-E3 Si1958DH-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH OT-363 SC-70 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si2312BDS

    Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 m2 marking

    Si1905DL

    Abstract: marking code QB
    Text: Si1905DL Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.600 at VGS = - 4.5 V ± 0.60 0.850 at VGS = - 2.5 V ± 0.50 1.200 at VGS = - 1.8 V ± 0.42 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1905DL 2002/95/EC OT-363 SC-70 Si1905DL-T1-E3 Si1905DL-T1-GE3 18-Jul-08 marking code QB

    SC70-6

    Abstract: Si1867DL Mil-Std-833D si1867
    Text: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a


    Original     		PDF Si1867DL SC70-6 61249-2lectual 18-Jul-08 Mil-Std-833D si1867

    Untitled

    Abstract: No abstract text available
    Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a


    Original     		PDF Si1869DH SC70-6 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH 2002/95/EC OT-363 SC-70 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI1553DL

    Abstract: No abstract text available
    Text: Si1553DL Vishay Siliconix Complementary 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V ± 0.70 0.630 at VGS = 2.5 V ± 0.54 0.995 at VGS = - 4.5 V ± 0.44 1.800 at VGS = - 2.5 V ± 0.32


    Original     		PDF Si1553DL 2002/95/EC OT-363 SC-70 Si1553DL-T1-E3 Si1553DL-T1-GE3 18-Jul-08