Untitled
Abstract: No abstract text available
Text: High Performance 32KX83.3Y CMOS SRAM •■ II AS7C3256 AS7G3256L L ow v o ltage 3 2 K x 8 C M O S SR A M Features • • • • O rganization: 32,7 6 8 w o rd s x 8 bits Single 3.3 ± 0.3V p o w e r supply 5V tolerant I /O specification H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e
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32KX83
AS7C3256
AS7G3256L
AS7C3256-12PC
AS7C3256L-1
AS7C3256-15PC
AS7C3256L-15PC
AS7C3256-20PC
AS7C3256L-20PC
AS7C3256-12JC
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3842 smps IC
Abstract: ci 3842 smps k a 3842 circuit diagram 3842 boost converter 3842 PWM power supply application note circuit diagram smps power supply using IC 3842 a 3842 buck converter 3842IC ETD-39 3842 transformer data
Text: APPLICATION NOTE 962 A 70W Boost - Buck 5uk Converter Using HEXSense” Current-Mode Control (HEXSenae and HEXFET a n tradamarka o f In ternational Ractlfm r) by R. Pmic*. D. Grant Introduction International Rectifier’s range of HEX Sense Power MOSFETs with inte
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AN-959,
AN-960.
AN-962
3842 smps IC
ci 3842
smps k a 3842 circuit diagram
3842 boost converter
3842 PWM power supply application note
circuit diagram smps power supply using IC 3842 a
3842 buck converter
3842IC
ETD-39
3842 transformer data
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Untitled
Abstract: No abstract text available
Text: IDE t I 4302371 ÜÜ13073 1 I HARRIS SE MIC OND SECTOR H A R R HA- 5033/883 I S 7^ 7 7 -2 S ' Video Buffer J a n u a ry 1 9 8 9 Features Description • T h is C irc u it Is P ro c e s s e d In A c c o rd a n c e to M li-S td 8 8 3 a n d is F u lly C o n fo rm a n t U n d e r th e P ro v is io n s o f
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500mV
10Vto0
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Untitled
Abstract: No abstract text available
Text: Advance information Features • Organization: 131,072 words x 16 bits • 3.3V ±0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low pow er consum ption - Active: 5 0 4 m W max 15 ns cycle
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32KX16
AS7C513)
64KX16
AS7C1026)
AS7C4098)
3128K
3128K16-10TC
S7C3128K16-12JC
3I28K
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WZ-250
Abstract: TL2002
Text: F ra n ce information Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att active p o w er red u ctio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x ] 6 bits 1.65V to 1.95V operating range JESD 8 -7 H igh speed
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48-ball
AS7C181026LL-55T1
181026IX-55BC
181026IX-55BI
AS7C181026LL-70TC
AS7C1810261L-70T[
181026IL-70BC
181026IL-70BI
AS7C18
026LL-1OOTC
WZ-250
TL2002
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IH5110
Abstract: offset potentiometer pin configuration 20K potentiometer pin 3 IH5111 01UF IH5115 T010 JE-16 pin configuration 20K potentiometer injection
Text: D IM IP S O IL IH 5110 — IH 5115 General Purpose Sample & Hold FEATURES GENERAL DESCRIPTION • • • • • • • Each of the 5110 family is a complete Sample and Hold circuit, except for sampling capacitor including input buffer amplifier, output buffer amplifier and CMOS logic switching.
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100/jV
01/uF
IH5110
IH5115
IH5110
offset potentiometer
pin configuration 20K potentiometer pin 3
IH5111
01UF
T010
JE-16
pin configuration 20K potentiometer
injection
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MB8167A
Abstract: B8167A-4S
Text: FUJITSU MIC RO EL E C T R ON I C S 7ö » Ê 1 3 7 M “ì7t,a DD03410 b I — — 3 7497 62 FUJIT SU M I C R O E L E C T R ON I C S - — y ' 7ÖC 0 34 10 F U J IT S U MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A - 7 0 NMOS 16,384-Bit Static Random Access Memory
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DD03410
384-Bit
MB8167A
20-Lead
DIP-20C-C03
BB167A-4S
MB8167A-65
B8167A-70
374T7t
00D3415
B8167A-4S
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A10461
Abstract: No abstract text available
Text: 16 Megabit CMOS Flash EEPROM Dense-Pac Microsystems. Inc. ^ D P Z 1M S 1 6 P /D P Z 1 M S 1 6 X P DESCRIPTION : The DPZ1M S16P/XP is a 16 Megabit CM OS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 128K x 8 FLASH memory devices
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S16P/XP
1024K
2048K
S16XP)
S16XP
S00mV
S16XP
3QA051-00
A10461
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UX-24
Abstract: pmi mux08 pmi mux 08
Text: MUX-08/MUX-24 JUD 8-CHANNEL/DUAL 4-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE AND POWER SUPPLY LOSS PROTECTED ’ti'* t i t in M o n o l i t h w ith low crosstalk to satisfy a wide variety of applications. These m ultiplexers do not suffer from latch-up or static
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MUX-08/MUX-24
MUX-08
DG50S,
HI-508A,
IH5108,
IH6108,
LF11508/12508/13508,
AD7506
MUX-24
DG509,
UX-24
pmi mux08
pmi mux 08
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Untitled
Abstract: No abstract text available
Text: H ig h P e r f o r m a n c e 6 4 K X 8 3 .3 V C M O S SR A M u II A S7C 3512 A S7C 3512L A Low voltage 6 4 K x 8 CMOS SRAM Preliminary information • • • • Organization: 65,536 w ords x 8 bits Single 3.3 ±0.3V pow er supply 5V tolerant 1/O specification
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3512L
S7C3512-35PC
AS7C3512L-25PC
S7C3512-20JC
S7C3512-25JC
AS7C3512-3SJC
AS7C3512L-20JC
3512-25PC
S7C3512L-20PC
AS7C3512-20PC
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ha4503
Abstract: 004HB
Text: HARRIS SEMICOND SECTOR HE D • 43D2271 0G4bb3‘i ÛT4 M H A S fflttftSKSS HA-5033 Video Buffer Match 1993 Description Features • Differential Phase E rror. . . .0.02 Degree • Differential Gain Error .0.03%
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43D2271
HA-5033
HA-5033
250MHz
ha4503
004HB
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Untitled
Abstract: No abstract text available
Text: CXA1592Q/R SONY* Encoder for CCD Color Camera Description The CXA1592Q/R is a bipolar 1C developed as an encoder for CCD color cameras. Color difference and luminance signals are input to be C X A1592G 48 pin QFP Plastic CXA1592R 48 pin VQFP (Plastic) output as composite video and Y/C separate signals.
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CXA1592Q/R
CXA1592Q/R
A1592G
CXA1592R
CXA1592
CXA1392
140mW)
00G7Q7Ã
XA1390
CXA1592Q/n
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Untitled
Abstract: No abstract text available
Text: HM6787 Series 65536-word x 1-bit High Speed Hi-BiCMOS Static RAM HM6787P Series • FEATURES • • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) High Driving Capability: lO L16mA • • +5V Single Supply
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HM6787
65536-word
HM6787P
25ns/30ns
180mW
L16mA
HM6787CG
HM6787P-25
HM6787P-35
HM6787CG-25
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IDT72401
Abstract: IDT72402 IDT72403 IDT72404
Text: CMOS PARALLEL FIFO 64 x 4-BIT AND 64 x 5-BIT Integrated Device Technology, Inc. FEATURES: First-ln/First-Out dual-port memory 64 x 4 organization IDT72401/03 64 x 5 organization (IDT72402/04) IDT72401/02 pin and functionally compatible with MMI67401/02 RAM-based FIFO with low fall-through time
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IDT72401
IDT72402
IDT72403
IDT72404
IDT72401/03)
IDT72402/04)
IDT72401/02
MMI67401/02
175mW
45MHz
IDT72404
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HM6167LP-8
Abstract: HM6167P HM6167 HM6167-6 HM6167P-6 HM6167P-8 HM6167LP HM6167-8 HM6167LP-6 intel 2167
Text: H M 6167 S e r ie s Maintenance Only Substitute HM6267P 16384-word x 1-bit High Speed CMOS Static RAM •FEATURES » Single + 5 V Supply and High Density 2 0 Pin Package Fast Access Tim e — 85ns/100ns » Low Power Stand-by and Low Power Operation t Stand-by 100/lcW typ./5/LtW ty p . (L-version)
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HM6167
16384-word
85ns/100ns
100/lcW
150mW
HM6167P-6
HM6167P-8
100ns
300mil
HM6167LP-6
HM6167LP-8
HM6167P
HM6167-6
HM6167LP
HM6167-8
intel 2167
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hp 30d8 Temperatures
Abstract: LA7320 LA7322 DIP30S LA7321 T31A 3SK22 10KF6 head preamp T-19-A
Text: SANYO SEMICONDUCTOR CORP S3E J> • 7 W 0 7 b 0010020 T3Ô « T S A J T -7 7 'O r -O ^ I _ LA7322 No - / Monol i t hi c Linear IC / / Single-Chip fIQ Luminance Signal Processor TENTATIVE Tlie LA7322 is a single-chip HQ High Quality VTR lum inance signal processor IC th a t contains a detail
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7W07b
LA7322
LA7322
LA7320
LA7321
DIP30S)
LA7322-12/13
hp 30d8 Temperatures
LA7320
DIP30S
LA7321
T31A
3SK22
10KF6
head preamp
T-19-A
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HM6147
Abstract: NMOS 2147H 2147H HM6147H-35 HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55
Text: Maintenance Only HM6147H Series 4096-word x 1-bit High Speed CMOS Static RAM •FEATURES • • • High Speed: Fast Access Time 35ns/45ns/55ns max. Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5/nW (typ.) (L-version), O peration: 150mW typ.
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HM6147H
4096-word
35ns/45ns/55ns
100juW
150mW
2147H
INFOR10
-HM6147H
HM6147
NMOS 2147H
HM6147H-35
HM6147HLP-35
HM6147HLP-45
HM6147HLP-55
HM6147HP-35
HM6147HP-45
HM6147HP-55
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e3232
Abstract: Dense-Pac Microsystems
Text: DENSE-PAC MICROSYSTEMS 2ÖE T> • 275*1415 GOGÜflbH ñ BIDPC DPE3232V □PMDense-Pac Microsystems, Inc. ^ 32K X 32 C M O S EEPROM VERSAPAC DESCRIPTION: The DPE3232V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and
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DPE3232V
DPE3232V
16-bit
32-bit
64-BWDW
S00mV
30A014-20
e3232
Dense-Pac Microsystems
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MB8464A
Abstract: iw 1688 B8464A
Text: January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation The Fujitsu MB8464A-X is an 8,192 words x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous
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January1990
MB8464A-10-X/-10LL-X/-15-X/-15LL-X
64K-BIT
MB8464A-X
DIP-28P-M02
DIP-2SP-M04S
32-PAD
LCC-32C-A02)
C32Q11S-3C
MB8464A
iw 1688
B8464A
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HM6168HP-55
Abstract: HM6168HP-45 HM6168HLP-55
Text: H M 6 1 6 8 H S e r ie s Maintenance Only Substitute HM6268P 4096-word x 4-bit High Speed CMOS Static RAM •FEATURES • High Speed: Fast Access Time 4 5 /5 5 /7 0 ns (max.) • Single +5V Supply and High Density 20 Pin Package • Low Power Standby: 100/aW typ, 5/iW typ. (L-version)
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HM6168H
4096-word
100/aW
200mW
HM6268P)
HM6168HP-45
HM6168HP-55
HM6168HP-70
300mil
20pin
HM6168HLP-55
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