RF Amplifier 500w 175 mhz
Abstract: ft3000m MIMIC control panel CPI Helix tube VTG6292 500w amplifier a 40 watt power supply 500W D Amplifier 2780C
Text: CPI 500W S/C-Band TWT Amplifier for Instrumentation Applications S/C - Band The VZS/C-2780C2 S/C-Band 500 watt TWT High Power Amplifier features high efficiency, small size and an integral computer interface. Safety Provides 500 watts of power in the 2.0 to
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VZS/C-2780C2
19-inch
design40
RF Amplifier 500w 175 mhz
ft3000m
MIMIC control panel
CPI Helix tube
VTG6292
500w amplifier
a 40 watt power supply
500W D Amplifier
2780C
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Untitled
Abstract: No abstract text available
Text: High Power S band Drop-in Isolator Renaissance has developed a new low cost, high power, drop-in isolator to protect expensive amplifiers from unwanted reflected power levels at S band frequencies. Covering 2.7 – 2.9 GHz, this isolator provides a VSWR of
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FMM5049
Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Text: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier
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FMM5049VT
FMM5049VT
FMM5049
S-Band Power Amplifier
S-Band high Power Amplifier
S-band mmic
MMIC POWER AMPLIFIER S-BAND
MMIC s-band amplifier
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2527A
MGFS45V2527A
079MIN.
25ohm
GF-51
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
25ohm
GF-51
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idq09
Abstract: MGFS45B
Text: < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45B2527B
MGFS45B2527B
34dBm
37dBm
10ohm
idq09
MGFS45B
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mgf*S45V2527A
Abstract: MGFS45V2527A
Text: < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2527A
MGFS45V2527A
079MIN.
-45dBc
mgf*S45V2527A
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
-45dBc
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mgfs45b2527
Abstract: po34d MGFS45B MGFS45B2527B
Text: < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45B2527B
MGFS45B2527B
34dBm
37dBm
10ohm
mgfs45b2527
po34d
MGFS45B
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04 monolithic amplifier
Abstract: No abstract text available
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.
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CHA5082
CHA5082
27dBm
-20dBm)
DSCHA50826354
04 monolithic amplifier
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s band
Abstract: CHA5082
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.
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CHA5082
CHA5082
27dBm
-20dBm)
DSCHA50826354
s band
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2123A
MGFS45V2123A
079MIN.
25ohm
GF-51
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2123A
MGFS45V2123A
079MIN.
-45dBc
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MGFS45v
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45V2527B
079MIN.
-45dBc
MGFS45v
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MGFS45V2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz
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MGF2445A
MGF2445A,
12GHz
450mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz
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MGF2407A
MGF2407A,
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45V2527B
079MIN.
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
-45dBc
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS44V2735
MGFS44V2735
-45dBc
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MGF2430A
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
MGF2430A
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC b S HT ö S T DDl ñOTO ÛGS MGF7121 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION OUTLINE DRAWING MGF7121 is a monolithic microwave integrated circuit for use in Unit:millimeters 1,9GHz band power amplifiers. FEATURES • H igh output power
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MGF7121
MGF7121
22dBm,
600kHz)
900kHz)
22dBm
22dBm
-16dBm
600kHz,
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