GP144
Abstract: CR10
Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFS45B2527B 2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFS45B2527B is an internally impedance-matched
|
Original
|
PDF
|
MGFS45B2527B
MGFS45B2527B
34dBm
37dBm
GP144
CR10
|
mgfs45b2527
Abstract: po34d MGFS45B MGFS45B2527B
Text: < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFS45B2527B
MGFS45B2527B
34dBm
37dBm
10ohm
mgfs45b2527
po34d
MGFS45B
|
idq09
Abstract: MGFS45B
Text: < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFS45B2527B
MGFS45B2527B
34dBm
37dBm
10ohm
idq09
MGFS45B
|
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
|
Original
|
PDF
|
H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
|