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    RX1214 Search Results

    RX1214 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
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    RX1214 Price and Stock

    Rochester Electronics LLC RX1214B280YH

    MICROWAVE POWER TRANSISTOR
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    Ampleon RX1214B300Y,114

    RF TRANS NPN 60V 1.4GHZ CDFM2
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    DigiKey RX1214B300Y,114 Tray
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    Rochester Electronics LLC RX1214B130YI

    - Rail/Tube (Alt: RX1214B130YI)
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    Rochester Electronics LLC RX1214B300YI

    Microwave Power Transistor NPN 60V 21A 3-Pin SOT-439A - Trays (Alt: RX1214B300YI)
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    NXP Semiconductors RX1214B300YI112

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    RX1214 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RX1214B130Y Philips Semiconductors NPN microwave power transistor Original PDF
    RX1214B130Y Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RX1214B130Y Philips Semiconductors NPN microwave power transistors Scan PDF
    RX1214B150W Philips Semiconductors Microwave Power Transisitor Scan PDF
    RX1214B170W Philips Semiconductors Microwave Power Transistor Original PDF
    RX1214B170W Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan PDF
    RX1214B170W Philips Semiconductors Microwave power transistor Scan PDF
    RX1214B300Y Advanced Semiconductor Transistor Original PDF
    RX1214B300Y NXP Semiconductors NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us Original PDF
    RX1214B300Y Philips Semiconductors NPN microwave power transistor Original PDF
    RX1214B300Y Philips Semiconductors Pulsed Microwave Power Transistor Original PDF
    RX1214B300Y Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RX1214B300Y Philips Semiconductors NPN microwave power transistor Scan PDF
    RX1214B300Y,114 NXP Semiconductors NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us; Package: SOT439A (CDFM2); Container: Blister pack Original PDF
    RX1214B350Y Philips Semiconductors NPN Microwave Power Transistor Original PDF
    RX1214B350Y Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RX1214B350Y Philips Semiconductors NPN Microwave Power Transistor Scan PDF
    RX1214B80W Philips Semiconductors NPN microwave power transistor Original PDF
    RX1214B80W Philips Semiconductors NPN microwave power transistors Scan PDF

    RX1214 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A


    Original     		PDF RX1214B300Y OT439

    RX1214B130Y

    Abstract: RX1214B80W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium


    Original     		PDF RX1214B80W; RX1214B130Y SCA53 127147/00/02/pp12 RX1214B130Y RX1214B80W

    RX1214B300Y

    Abstract: No abstract text available
    Text: RX1214B300Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI RX1214B300Y is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° 2xB C F E D G FEATURES: I • Internal Input/Output Matching Network


    Original     		PDF RX1214B300Y RX1214B300Y

    RX1214B300Y

    Abstract: RX1214B300 L-Band
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A


    Original     		PDF RX1214B300Y OT439A SCA53 127147/00/02/pp12 RX1214B300Y RX1214B300 L-Band

    RX1214B170W

    Abstract: 100A101
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium


    Original     		PDF RX1214B170W SCA53 127147/00/02/pp12 RX1214B170W 100A101

    RX1214B350Y

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium


    Original     		PDF RX1214B350Y SCA53 127147/00/02/pp12 RX1214B350Y

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium


    Original     		PDF RX1214B80W; RX1214B130Y OT439

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium


    Original     		PDF RX1214B350Y OT439

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


    OCR Scan     		PDF bb53131 RX1214B150W RX1214B150W

    Untitled

    Abstract: No abstract text available
    Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.


    OCR Scan     		PDF RX1214B150W bb53T31 T-33-15

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor


    OCR Scan     		PDF RX1214B170W 7/00/02/pp12

    RX1214B300Y

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF OT439A MBH904 MBH903 RX1214B300Y RX1214B300Y

    RX1214B150W

    Abstract: No abstract text available
    Text: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.


    OCR Scan     		PDF RX1214B150W 7110fl2b 711002b 7Z242Ã RX1214B150W

    atc100a101kp

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA


    OCR Scan     		PDF AT3-7271SL ATC100A101kp50x LC455 atc100a101kp

    STT 433

    Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium


    OCR Scan     		PDF RX1214B170W FO-91B. 71106Eb STT 433 variable capacitor erie ceramic RX1214B170W Tekelec

    RX1214B300Y

    Abstract: No abstract text available
    Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.


    OCR Scan     		PDF RX1214B300Y D01S113 RX1214B3 RX1214B300Y

    RX1214B170W

    Abstract: SC15
    Text: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA


    OCR Scan     		PDF RX1214B170W MLC455 OT439A. RX1214B170W SC15

    RX1214B350Y

    Abstract: SC15 TP130 985 transistor erie 1250-003 transistor list
    Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms/10% broadband amplifier. • Internal input prematching networks allow an easier design of


    OCR Scan     		PDF RX1214B350Y OT439A. RX1214B350Y SC15 TP130 985 transistor erie 1250-003 transistor list

    Philips electrolytic 106 screw

    Abstract: STR aluminium electrolytic capacitor
    Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y


    OCR Scan     		PDF RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor

    T01A transistor

    Abstract: T01A RX1214B300Y SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y PINNING - SOT439A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF RX1214B300Y OT439A OT439A. T01A transistor T01A RX1214B300Y SC15

    RX1214B150W

    Abstract: transistor bc 325
    Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C


    OCR Scan     		PDF bb53131 RX1214B150W resistanc250 RX1214B150W transistor bc 325

    RX1214

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common-base class C


    OCR Scan     		PDF RX1214B80W; RX1214B130Y RX1214B80W MGA258 RX1214

    RX1214B

    Abstract: erie 1250-003
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor RX1214B170W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor narrowband amplifier.


    OCR Scan     		PDF RX1214B170W 100A101kp50x 1214B MBC981 FO-91B. 71106Eb RX1214B erie 1250-003

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12