Untitled
Abstract: No abstract text available
Text: 4 3 Mo dacuwra^liMho g ry rty^ a fj*mp h «^C cip c«^^ M ?radon ftrdomararfooture or Aoolod ah no a mrightt Stovgranted ta i priort>oonoort C m?ook ayrHt MitInfawwodon thlo rioouwont _ TOLERANCE + / - 0 . 0 3 Customer drawing 4 3 _ 1_
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777TW
L777TWA7WZPUP3SV4R
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Untitled
Abstract: No abstract text available
Text: „ ^ f[/ J}L I DENSE-PAC S* rty V 1v M I C R O S Y S T E M S 32 MEGABIT FLASH EEPROM \\ DPZ2MX16Nn3 PRELIMINARY D ESC RIPT IO N : The DPZ2MX16Nn3 “ STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip
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DPZ2MX16Nn3
50-pin
32-Megabits
DPZ2MX16Nn3
120ns
30A117-04
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Untitled
Abstract: No abstract text available
Text: Reproduction or issue to third p ortie s in any AH rig hts s tric tly re se rve d . fo rm w hatever is not p erm itte d w ithout w ritte n outhority fro m the p ro p rie to r. P ro pe rty o f F C I. C opyright F C I. Tous dro its s tricte m e n t re se rve s.
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MS6M0364
Abstract: 6MBP30RY060 QQD554D
Text: Thla m a lir la l and tha Inform ation haraln U lh# pro p e rty of Fuji Etactrlc C o.,Lid. Th«y ahall ba nallhar ra p ro d u ca d , c o p ia d , lm , or dlacloaad In any way w h « U o « v ir for tha u«a of an y third party nor uaad for tha manufacturing purpoiaa w it h o u t
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6MBP30RY060
MS6M0364
0DD5537
H04-004-07
0GD553Ã
6MBP30RY060.
6MBP30RY060)
MS6M0364
6MBP30RY060
QQD554D
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delay line ms-31
Abstract: fuji ipm 33UF 6MBP30RY060
Text: H04-004-07 This m a te ria l and the Inform ation herein Is the p ro p e rty of Fuji Electrlo Co.,Ltd. They «hall be neither reproduced, copied, lent, o r disclosed In any way w hatsoever fo r the use o f any th ird p arty nor used fo r the m anufacturing purposes w itho u t
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6MBP30RY060
MS6M0364
H04-004-07
6MBP30RY060.
6MBP30RY060)
MS6M0364
H04-004-03
delay line ms-31
fuji ipm
33UF
6MBP30RY060
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fuji ipm
Abstract: ipm application fuji 6MBP20RY060 fuji transistor modules
Text: Thla m a la ria l and tha tn fo rm itlo n haraln 1« kha p ro p e rty o f Fuji Eiaotrio Co.,Lid. Thay «M il ba nalthar ra p rod u oa d , co pie d, U n t, or d lio loa ad In any way w h a la o a va r for tha uia of any third party nor uaad for lha m anufa ctu rin g purpoaa* w ith o u t
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6MBP20RY060
MS6M0363
MS6M0363
H04-004-07
6MBP20RY060.
6MBP20RY060)
H04-004-03
fuji ipm
ipm application fuji
6MBP20RY060
fuji transistor modules
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Untitled
Abstract: No abstract text available
Text: 3 Thta d o a a e n t i i 4 k p ro p e rty o f Anphenol C orporation and if M lw n d a th e t y in oandHIan th a t I t b n o t to be dhdoeed, ra p rod u ad o r w e d. h •-in a lt by anyone o th e r th a n Anc LSehob— o r In p a rt, fo r n a nuufaftectuttre
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HK6577
AA13010000
/23/U
11/23/U
X\CAA13010000
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6MBI15S-120
Abstract: MSI MS-5 ISA S20
Text: the e x p re s s written way w hatsoever Co. ltd . p u rp o se s w ith o u t tor the use of a n y c o n s e n t of Fuji Electric for the m a n u fa ctu rin g in any ihlrtl par ly.nor u$ed lem . at disclosed T his m a t e ria l and »he In fo rm a tion herein Is the p ro p e rty
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H04-004-07
Jan-29-
5S3fl71E
H04-004-03
D00S33t
H04-004-03
6MBI15S-120
MSI MS-5
ISA S20
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6mbp20rta060
Abstract: MQ 6 gas leakage alarm AC2500 H04-004 P619 MT6M04140 hn40 IR high voltage gate driver ic chips MS6M0713
Text: T h is m a te ria l and the in fo rm a tio n here in is the p r o p e r ty of Fuji Electnc C o .L td .T h e y shall be neith er reproduced, copied, le n t, or disclosed in any w a y w h a ts o e v e r fo r the use o f any th ird p a rty .n o r used fo r the m a n u fa c tu rin g p u rpose s w ith o u t
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6MBP20RTA060
MS6M0713
H04-004-07a
MS6M0713
6mbp20rta060
MQ 6 gas leakage alarm
AC2500
H04-004
P619
MT6M04140
hn40
IR high voltage gate driver ic chips
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RJMG16XXX8XX1XX
Abstract: 0-KN-21 RJMG16XXX 2t512 NE045
Text: I _ A_ I_ _ _ _ _ _ _ _ _ CUSTOMER DRAWING T K a d a e u m e n t ia t h a prop e rty a f A m p h « n o l C a rp a ro tio n a n d Ta dtt4iV*rod a n ih a c x p r n a s candrtÎDn that it b not ta b e dia clo se d , rn p ra d u co d o r ucfid, in w holû o r In port, fo r m a n u fa c t u ra n r so la h y a n y o n a o t h e r th a n
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NE--046
MIL-STD-1344A
RJMG16XXXXXX1XX
RJMG16XXX8XX1XX
0-KN-21
RJMG16XXX
2t512
NE045
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LM317T vw
Abstract: TS2D 64SED IC 74LS00 transistor AE code PNP smd
Text: S-MOS S Y S T E M S A Seiko Epson. Affiliale SED1352 Graphics LCD Controller SED1352 TECHNICAL MANUAL Issue Date: 98/01/27 Document No. X16B-Q-001-04 C o p y r ig h t 1997, 1998 S -M O S S y s te m s Inc. A ll rig h ts re served . T h is d o c u m e n t, and a n y text d e rived, e x tra c te d o r tra n s m itte d fro m it, is th e so le p ro p e rty of S -M O S S yste m s Inc. and m a y not b e use d , cop ie d,
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SED1352
X16B-Q-001-04
SED1352:
X16-AN-005-05
X16-AN-005
LM317T vw
TS2D
64SED
IC 74LS00
transistor AE code PNP smd
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fuji ipm
Abstract: p611 4MBP100RA060 AC2500
Text: Thi* m alarial and tha in fo rm âtIor» harfltn I« tha p/oparty of Fuji £1 aatr i o Co., Ltd. Ihay aha 11 ba nalthar raproduead, copiad, lant. or dl*ol9*«d ìa ar>y way whtt«e*ar for ut* o4 %ny third P*<“ty. r»or uaad for tha «unufiotur Jn| purpoiaa w ithout
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4MBP100RA060
-Juh-14-
H04-004-07
H04-004-03
fuji ipm
p611
4MBP100RA060
AC2500
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6MBP15RH060
Abstract: DQ054 fuji ipm DDG5477 fuji electric ipm
Text: Thla m a la ria l and tha Information haraln 1» tha property o f Fuji Ctaotrlo C o.,lid . Thay ahall ba nalthar rap ro d u o ad , coplad. U ni, or dlaofoaad in any way w h a U e a va r For tha uaa of a n y third party nor uaad for tha manufacturing p u rp o a a i w ithout
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6MBP15RH060
MS6M0385
MS6M0385
0GG51475
H04-004-07
6MBP15RH060.
6MBP15RH060)
H04-004-03
6MBP15RH060
DQ054
fuji ipm
DDG5477
fuji electric ipm
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toshiba TA8251AH
Abstract: TA8251AH HZIP25 toshiba 27c HZIP25-P-1 4ch car amp ic
Text: TOSHIBA TA8251 AH TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8251AH M AX POW ER 30W BTLx4CH AUDIO PO W ER IC The TA8251AH is 4ch BTL audio power amplifier for consumer application. It is designed low distortion ratio for 4ch BTL audio power amplifier, built-in Stand-by Function, Muting
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TA8251
HZIP25-P-1
toshiba TA8251AH
TA8251AH
HZIP25
toshiba 27c
4ch car amp ic
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2sk3102
Abstract: 2SK3102-01R 103 H04 10S3 2sk3102-01
Text: H04-004-07 1.Scope This specifies Fuji Power MOSFET 2SK3102-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.0utview TO-3PF Outview See to 5/|2 page ", 5.Absolute Maximum Ratings at Tc=25°C unless otherwise specified
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2SK3102-01R
MS5F4207
H04-004-07
2SK3102-01R
H04-004-03
F4207
H04-004-03
2sk3102
103 H04
10S3
2sk3102-01
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toshiba TA8251AH
Abstract: TA8251AH ta8251 100 w amplifier diagram
Text: TOSHIBA TA8251 AH TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8251AH M AX POWER 30W BTLx4CH AUDIO POWER IC The TA8251AH is 4ch BTL audio power amplifier for consumer application. It is designed low distortion ratio for 4ch BTL audio power amplifier, built-in Stand-by Function, Muting
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TA8251
HZIP25-P-1
toshiba TA8251AH
TA8251AH
100 w amplifier diagram
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Leoco 3963
Abstract: 2335A
Text: 2 1 * * * 3963 R S e r ie s * * 3 4 * M aterial : * I n s u la t o r : UL 9 4 V -2 Nylon 6 /6 * C o n ta c t I Brass * P la t in g : Tin P .C .B oard CD £ . 3,960+0,05 ,156>*,002 \Ah Ah fl fi V •\ ^ t\ U r-ty ru p- ^ fh 1 W , '01,00*0, L0 ,040±,004 ,071*, 004
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15fei
3963S02ROOO
3963S03ROOO
920C312)
3963SÃ
3963S05ROOO
84GC624)
3963S06ROOO
3963S07ROOO
760C936)
Leoco 3963
2335A
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toshiba TA8251AH
Abstract: 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM TA8251AH HZIP25-P-1 TA8251
Text: TOSHIBA TA8251 AH TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8251AH M AX POWER 30W BTLx4CH AUDIO POWER IC The TA8251AH is 4ch BTL audio power amplifier for consumer application. It is designed low distortion ratio for 4ch BTL audio power amplifier, built-in Stand-by Function, Muting
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TA8251
TA8251AH
HZIP25-P-1
toshiba TA8251AH
5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM
TA8251AH
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Untitled
Abstract: No abstract text available
Text: 2. S c h e m a tic : 1. M e c h a n i c a l D im e n s i o n s : 1 0 .5 0 S.Q. Max 3. Electrical Specifications:@25aC OCL: 0 .6 8 u H ± 6 % Q: 7 0 ^R em oved Min @ 45M H z 0 .1 V @ 45M H z 0 .1 V P in # 5 Notes: 1. Solderabllity: Leads ahall meet MIL—STD—2D2G,
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E151556
45MHz
XF101013-1
Nov-03â
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208H
Abstract: 64REF
Text: 2 . Schem atic: 1. Dimensions: A 1.80 oB 1.120 Green d o t o- 3. Electrical Specs: 0.3BREF C DCL: 8 2 n H ± 5 % @ 150M Hz 0.1V DC Res.: 0 .5 4 0 O hm s Max 1.020 DC C u rre n t: 4-OOmAdc Max Q: 3 4 Min @15DMHz SRF: 1700M H z Min N o te s : 1. S o lderab illty: Leads aha II m e e t M IL - S T D - 2 0 2 G .
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33REF
76REF
33REF
64REF
020REF
150MHz
400mAdc
15DMHz
208H
64REF
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430TX
Abstract: No abstract text available
Text: PRELIMINARY INTEL 430TX PCISET: 82439TX SYSTEM CONTROLLER MTXC • S upports M obile and Desktop ■ S upports th e Pentium Processor Fam ily Host Bus at 66 MHz and 60 MHz at 3.3V and 2.5V ■ PCI 2.1 C om pliant ■ Integrated Data Path ■ Integrated DRAM C ontroller
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430TX
82439TX
P59-001
82439TX
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2SC2882
Abstract: 2SA1202
Text: TOSHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm POWER AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • • • 1.6 M AX — 1.7M AX. Suitable for Driver of 30~35 Watts Audio Amplifier Pc = l~2W (Mounted Ceramic Substrate)
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2SC2882
2SA1202
250mm2
2SC2882
2SA1202
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2SD2481
Abstract: No abstract text available
Text: TOSHIBA 2SD2481 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD2481 Unit in mm PULSE M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS SW ITCHING APPLICATIONS 8.0 ± 0.2 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : —4000 (Min.) •
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2SD2481
100ms*
2SD2481
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oq 0066
Abstract: No abstract text available
Text: 2. Schem atic: 1. M e c h a n ic a l D im e n s i o n s : o- o1.28 Max A 3. E l e c t r i c a l o X £ 1 CO 00 tr 11 o X LO Li_ X r> I r OCL; 15 u H ± 1 5% I.O K H z ^ °1 — r r 1 r 1 *— r I c .* 0 .6 5 0 _ Max Lead T inned to S p e c i f i c a t i o n s : @25°C
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18-OAdc
UL94V-0
-t-125
3XF0156â
Aug-27â
Auq-27â
oq 0066
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