Untitled
Abstract: No abstract text available
Text: IBM11M2720Q 2M x 72 D R A M M O D U LE Features • System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - • 2Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data Reduced Noise (32 Vss/Vcc pins)
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IBM11M2720Q
2Mx72
110ns
130ns
45less
SA14-4608-01
50H4348
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Untitled
Abstract: No abstract text available
Text: STI642000G2-XXLVG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI. •-60LVG 60ns 15ns 110ns STI. ■-70LVG 70ns 20ns 130ns STI. .-80LVG 80ns 20ns 150ns • Fast Page Mode operation
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STI642000G2-XXLVG
144-PIN
STI642000AG2
44-pin
-60LVG
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Untitled
Abstract: No abstract text available
Text: Lattice ispLSr and pLSr 2032V/LV J Semiconductor 1• Corporation 3.3V High Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 1000 PLD Gates 32 I/O Pins, Two Dedicated Inputs 32 Registers High Speed Global Interconnect
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032V/LV
032V-100LT44
44-Pin
2032LV-80LJ
2032LV-80LT44
2032LV-60LJ
2032LV-60LT44
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6MBP15RH060
Abstract: DQ054 fuji ipm DDG5477 fuji electric ipm
Text: Thla m a la ria l and tha Information haraln 1» tha property o f Fuji Ctaotrlo C o.,lid . Thay ahall ba nalthar rap ro d u o ad , coplad. U ni, or dlaofoaad in any way w h a U e a va r For tha uaa of a n y third party nor uaad for tha manufacturing p u rp o a a i w ithout
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6MBP15RH060
MS6M0385
MS6M0385
0GG51475
H04-004-07
6MBP15RH060.
6MBP15RH060)
H04-004-03
6MBP15RH060
DQ054
fuji ipm
DDG5477
fuji electric ipm
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