x9cmme
Abstract: oscillator tunnel diode Position Estimation transistor substitution chart USE OF TRANSISTOR AN1158 AN43 RR-520 X9241A X9312
Text: Designing with Intersil Digitally Controlled Potentiometers XDCPs Application Note Introduction The use of Intersil's nonvolatile digital potentiometers (XDCPs) can simplify and/or solve many mixed signal design problems. However, in some applications, a deeper
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AN1158
x9cmme
oscillator tunnel diode
Position Estimation
transistor substitution chart
USE OF TRANSISTOR
AN43
RR-520
X9241A
X9312
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x9cmme
Abstract: X9CMME datasheet X9C103 AN43 AN53 RR-520 X9241A X9312 X9313 X9314
Text: Application Note AN53 Designing with Xicor Digitally Controlled Potentiometers XDCPs Introduction The use of Xicor's nonvolatile digital potentiometers (XDCPs) can simplify and/or solve many mixed signal design problems. However, in some applications, a
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X9241AW
X9241AU
X9241AM
X94xx
x9cmme
X9CMME datasheet
X9C103
AN43
AN53
RR-520
X9241A
X9312
X9313
X9314
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X9503
Abstract: X9503 equivalent X9103 Application note x9314 x9cmme AN53 xicor Position Estimation RR-520 XICOR AN43 USE OF TRANSISTOR
Text: Application Note AN53 Designing with Xicor E2POTs by Gray Creager, December 1994 Introduction The use of Xicor's nonvolatile digital potentiometers 2 E POTs can simplify and/or solve many mixed signal design problems, however in some 2 applications, a deeper understanding of E POT
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AN53-7
X9503
X9503 equivalent
X9103
Application note x9314
x9cmme
AN53 xicor
Position Estimation
RR-520
XICOR AN43
USE OF TRANSISTOR
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ECE1077
Abstract: mec5025 MAX8774 "" schematic lcd inverter dell STAC9205 quanta u36 max8774 EMC4001 Maxim MAX8774 0805 10V X7R 4.7UF quanta
Text: 5 4 3 2 1 D D Quanta Project Name: JX6 Dell Project Name: MGD Lite 2007-03-01 C C REV : D3B A00/X-Build Stage B B A A Title QUANTA COMPUTER COVER PAGE 5 4 3 2 Size Document Number MGD Date: Friday, March 02, 2007 Rev 3A Sheet 1 1 of 89 1 2 3 4 5 6 JX6 MGD-INTEGRATED
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A00/X-Build
ICS951462
N52515842
N17279942
N17280085
N17212693
8774DL2
QFN32-5x5-5-42P
QFN32-5x5-5-33P
QFN44-6x6-5-50P
ECE1077
mec5025
MAX8774 ""
schematic lcd inverter dell
STAC9205
quanta u36 max8774
EMC4001
Maxim MAX8774
0805 10V X7R 4.7UF
quanta
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transistor poly3
Abstract: RR510 RR-504 RR-520 X28C256 rr520
Text: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process
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RR-520
RR-504
000PageCycles
transistor poly3
RR510
RR-504
RR-520
X28C256
rr520
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XAAR 128
Abstract: xaar 1K x 4 static ram ttl S3V 77 S3v 32 RR-504 RR-520 X2212 X2212I
Text: X Commercial Industrial 1K X2212 X2212I S K 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fe a tures the JEDEC approved pinout for 4-bit-wide m em o ries, com patible with industry standard RAMs. FEATURES • Single 5V Supply
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18-Pin
X2212
X2212I
X2212/5
X2212I/5
X2212/10
X2212I/10
XAAR 128
xaar
1K x 4 static ram ttl
S3V 77
S3v 32
RR-504
RR-520
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1K x 4 static ram ttl
Abstract: x2201 RR-504 RR-520 X2201A
Text: Jtear 1K Commercial X2201A 1024 x 1 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: V q c = 3 V Typical
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X2201A
X2201A
1K x 4 static ram ttl
x2201
RR-504
RR-520
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X2864A
Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
Text: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical
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X2864A
X2864AI
8192x8
16-Byte
X2864A,
X2864AI
x2864
X2864A-25
X2864A-35
X2864A-45
RR-520
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X2210
Abstract: RR-504 RR-520 X2210I xicor x2210
Text: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical
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X2210
X2210I
18-Pin
wi210/5
X2210I/5
X2210/10
X2210I/10
RR-504
RR-520
xicor x2210
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24c16n
Abstract: AS1010
Text: X 1R1>. 16K n r Commercial X24C16 Industrial_ X24C16I_ 2 0 4 8 x8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 uA • Internally Organized as Eight Pages
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X24C16
X24C16I_
X24C16
0038-1J
X24C16,
X24C16I
24c16n
AS1010
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Untitled
Abstract: No abstract text available
Text: xhe Commercial Industrial 4K X2004 X2004I 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com
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X2004
X2004I
512x8
X2004
X2004,
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Untitled
Abstract: No abstract text available
Text: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times
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X2864H
X2864HI
8192x8
32-Byte
X2864H
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x9cmme
Abstract: ic x9cmme data X9C103
Text: SEE D XICOR INC 0 0 0 3 b 7 fl SBÖ * X I C Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 |iA Max
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X9C102
X9C103
X9C503
X9C104
x9cmme
ic x9cmme data
X9C103
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X24C02
Abstract: No abstract text available
Text: 3IE D XICOR INC *mi7M3 000270^ t PRELIMINARY INFORMATION Commercial Industrial 2K X24C02 X24C02I 256 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized 256 x 8
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X24C02
X24C02I
X24C02
X24C02,
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x24c04i
Abstract: No abstract text available
Text: XICO R INC 31E Commercial Industrial 4K •W 1 7 4 3 D O D B ? 1^ X24C04 X24C04I 51 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized as Two Pages
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X24C04
X24C04I
X24C04
X24C04,
X24C04I_
x24c04i
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Untitled
Abstract: No abstract text available
Text: occ Bit 256 Blt X2210 X2210I Commercial Industrial 64 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2210 fea tures the JEDEC approved pinout for 4-bit-wide memo ries, compatible with industry standard RAMs. FEATURES • Single 5V Supply
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X2210
X2210I
X2210
18-Pin
X2210,
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x2404
Abstract: X2404I BUT13
Text: X i H K AVC Commercial X2404 m o v «Rit _Industrial_ X2404I_ _ Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages — Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer
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X2404
X2404I_
RR-520
RR-51
RR504
X2404
X2404,
X2404I
BUT13
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x9cmme
Abstract: X9C103
Text: Preliminary Information Terminal Voltage ±5V X9CM M E im E2POT Digitally Controlled Potentiometer FEATURES D E S C R IP T IO N • Compatible with X9MME • Low Power CMOS — Active Current, 3 mA Max — Standby Current, 500 |iA Max • 99 Resistive Elements
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X9C102
X9C103
X9C503
X9C104
x9cmme
X9C103
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XICOR x2004
Abstract: 4RCC X2004 RR-504 RR-520 XICOR x2004i
Text: KEaü 4K Commercial Industrial X2004 X2004I 5 1 2 x 8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma ble nonvolatile memories. The X2004 features the JED EC approved pinout for byte-wide memories, com
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X2004
X2004I
512x8
X2004
X2004,
X2004I
XICOR x2004
4RCC
RR-504
RR-520
XICOR x2004i
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RR-504
Abstract: RR-520 X2210 X2210I NOVRAM
Text: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical
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X2210
X2210I
18-Pin
X2210/5
X2210I/5
RR-504
RR-520
NOVRAM
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x2864
Abstract: X28256 X2864A X28256-25 AO-A14 RR-520
Text: o Commercial X28256 v a Bit Industrial_ X28256I_ 32K x 8 Blt * rvc Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast Write Cycle Times — 64-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical
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X28256
X28256I
64-Byte
X2864A
X28256,
X28256I
x2864
X2864A
X28256-25
AO-A14
RR-520
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XICOR x2004
Abstract: No abstract text available
Text: X2004 X2004I Commercial Industrial 4K ifior 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V program m a ble nonvolatile m emories. The X2004 features the JEDEC approved pinout for byte-wide mem ories, com
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X2004
X2004I
512x8
X2004I
XICOR x2004
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RR-520
Abstract: X2804A X2804A-25 X2804A-35 X2804A-45 X2804AI X2804AI-25 X2804AI-35
Text: X Commercial Industrial 4K X2804A X2804AI y a r 5 1 2 x 8 Bit Electrically Erasable PROM FEATURES • Simple Byte Write Operation — Internally Latched Address and Data —Self Timed Write — Noise Protected WE Pin • Reliable N-Channel Floating Gate MOS
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X2804A
X2804AI
512x8
X2804A,
X2804AI
RR-520
X2804A-25
X2804A-35
X2804A-45
X2804AI-25
X2804AI-35
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 pA Max • 99 Resistive Elements —Temperature Compensated
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X9C102
X9C103
X9C503
X9C104
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