Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillator - VCO RQS-Series Features Applications ! ! ! ! ! ! ! ! Frequency Range up to 2.5 GHz Low Profile, below 2 mm Low Phase Noise Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation Description The RQS-series is ideally suited for cost-sensitive applications. With its small dimensions
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100pF.
2000MHz
750MHz
RQS-GeneralSpec-020228
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217F
Abstract: No abstract text available
Text: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Toroidal Magnetics Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number Input Voltage Output Voltage
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UL94V-0
RQS-xx05
RQS-xx09
RQS-xx12
RQS-xx15
RQS-xx24
26-October-2005
217F
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217F
Abstract: RECOM RQS-0505R
Text: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Optional Continuous Short Circuit Protected Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number Input
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UL94V-0
RQS-xx05
RQS-xx09
RQS-xx12
RQS-xx15
July-2006
217F
RECOM RQS-0505R
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MQE MURATA vco
Abstract: MQE MURATA MQE 001 MQE vco MURATA MQE MQE 50 vco murata vco specification
Text: Voltage Controlled Oscillator - VCO RQS-Series Features Applications ! ! ! ! ! ! ! ! Frequency Range up to 3.5 GHz Compatible to Murata MQE-series Low Profile, 1.9 mm Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation Description
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100pF.
2000MHz
750MHz
RQS-GeneralSpec-020710
MQE MURATA vco
MQE MURATA
MQE 001
MQE vco
MURATA MQE
MQE 50 vco
murata vco specification
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillator - VCO RQS-Series 1. FEATURES ! Frequency Range up to 2.5 GHz ! Super Compact SMT-Package: 8.0 x 6.0 [mm] ! Low Profile: 2.0 [mm] 2. APPLICATIONS ! ! ! ! PCS VSAT DECT CDMA ! ! ! ! GSM CATV WLAN GPRS 3. MECHANICAL SPECIFICATION
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10kHz
100pF.
SPEC-S-VCO-011010
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217F
Abstract: No abstract text available
Text: Features Unregulated Converters ● ● ● ● ● ECONOLINE 1kVDC Isolation Internal SMD Construction UL94V-0 Package Material Optional Continuous Short Circuit Protected Efficiency to 80% DC/DC-Converter RQS & RQD Series Selection Guide Part Number SMD
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UL94V-0
RQS-xx05
RQS-xx09
RQS-xx12
RQS-xx15
07-May-2007
217F
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9V24V
Abstract: No abstract text available
Text: ECONOLINE - DC/DC-Converter RQS / RQD Series, 0.25 Watt, SMD Single & Dual Output Features ● ● ● ● ● 1kVDC Isolation Efficiency to 73% UL 94V-0 Package Material Toroidal Magnetics Internal SMD Construction Selection Guide Part Number SMD Input
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RQS-XX05/0
RQS-XX09/0
RQS-XX12/0
RQS-XX15/0
RQS-XX24/0
RQD-0505
RQS-0505
9V24V
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillator - VCO RQS-Series Fe a t ure s Applic a t ions Frequency Range up to 3.5 GHz Compatible to Murata MQE-series Low Profile, 1.9 mm Low Power Consumption Wireless Networks Cordless Phones Telecommunications Navigation
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100pF.
RQS-GeneralSpec-020710
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SEM 2005 16 PINS
Abstract: sem 2005 640 4 channel long range RF based remote control star delta connection circuit diagrams RF based remote control SEM 2005 IEEE488 NI-488
Text: Contents SPECTRUM ANALYZERS 3280 & 3280A Series Programming Manual Document part no. 46892/768 SPECTRUM ANALYZERS 3280 & 3280A SERIES Programming manual 3281/3281A 3 Hz–3.0 GHz 3282/3282A 3 Hz–13.2 GHz 3283/3283A 3 Hz–26.5 GHz Aeroflex International Ltd. 2009
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3281/3281A
3282/3282A
3283/3283A
This04455
SEM 2005 16 PINS
sem 2005 640
4 channel long range RF based remote control
star delta connection circuit diagrams
RF based remote control
SEM 2005
IEEE488
NI-488
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amf panel
Abstract: Gpib to tds 3000 AU 4136 PC bit 3252 AMF 4.0 DATASHEET D-SUB 9 PIN MALE CONNECTOR Gpib IEEE488 NI-488 GPIB32
Text: Contents SPECTRUM ANALYZERS 3250 Series Programming Manual Document part no. 46892/975 SPECTRUM ANALYZERS 3250 SERIES Programming manual 3251 3252 3253 3254 1 kHz–3.0 GHz 1 kHz–8.0 GHz 1 kHz–13.2 GHz 1 kHz–26.5 GHz Aeroflex International Ltd. 2009
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Untitled
Abstract: No abstract text available
Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS230D,
FSS230R
O-257AA
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ9160D,
FSJ9160R
-100V,
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)
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DG133/134/141
DG133,
DG134,
DQ141
DG133/134/141
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs
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FSJ260D,
FSJ260R
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: 3 FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 2A, 500V, rQS oN) = 2.50Q • Total Dose - Meets Pre-Rad Specifications to 100KRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL430D,
FSL430R
100KRADS
1-800-4-HARRIS
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AX 1668 F 24 pin
Abstract: AX 1668 F IXTH17P25 ixtm17p25
Text: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc
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IXTH17P25
IXTM17P25
IXTM17P25
O-247
O-204
AX 1668 F 24 pin
AX 1668 F
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21N60
Abstract: a 1712 mosfet s300h 21N55 247 AA
Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous
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00D0342
IXTH21N60,
IXTM21N60,
IXTH21N55
IXTM21N55
IXTH21N60
IXTM21N60
O-204
O-247
21N60
a 1712 mosfet
s300h
21N55
247 AA
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19P20
Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Text: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr
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IXTH19P20,
19P20,
IXTH19P20
IXTH19P15
IXTM19P20
IXTM19P15
50-200V,
O-247
O-204
-65to
19P20
Mosfet K 135 To3
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Untitled
Abstract: No abstract text available
Text: i X y s lflE D coRP 000Db32 □ IX Y S S 1-3^1-13 IXTE10N60X4 MAXIMUM RATINGS PER DEVICE Parameter Sym. IXTE10N60X4 Drain-Source Voltage (1) Voss 600 Vdc Drain-Gate Voltage (Rqs = 1.0MO) (1) Vdgr 600 Vdc Vqs ±20 Vgsm ±30 Vdc V Id 10 Ado Drain Current Pulsed (3)
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000Db32
IXTE10N60X4
IXTE10N60X4
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40N25
Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Text: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300
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IXTH40N25
IXTH40N30
IXTM40N25
IXTM40N30
40N25
f g megamos
SM 226 6V
megamos 46 08 09 6
megamos
1712 mosfet
LD 5161
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)
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4bflb22b
IXTE14N40X4
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Untitled
Abstract: No abstract text available
Text: a a h a r r i s S E M I C O N D U C T O R FSL110D, FSL110R W " M M W • ■ 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3.5A, 100V, rQs oN “ 0.600Q The Discrete Products Operation of Harris Semiconductor
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FSL110D,
FSL110R
36MeV/mgfcm2
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: 2} H a rris RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 F eatures P ackage T 0 -2 0 5 A F B O TT O M VIEW • 1A, 180V and 200V • rQs on = 3.65ft • S O A is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds
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RFL1N18
RFL1N20
AN-7260.
92CS-36090
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP I f lE 4b ñ b 55 b D □ O □ □ a3 tt □ IX Y S T - 3 ° i -\3 I X T E 25 N 10 X 4 MAXIMUM RATINGS (PER DEVICE Parameter Sym. Drain-Source Voltage (1) Voss Drain-Gate Voltage (Rqs = 1-OMft) (1) Vd g r Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTE25N10X4
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