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Abstract: No abstract text available
Text: Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4.5 V gate drive
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RQK0603CGDQA
R07DS0307EJ0600
PLSP0003ZB-A
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RQK0603CGDQA
Abstract: RQK0603CGDQATL-E SC-59A
Text: RQK0603CGDQA Silicon N Channel MOS FET Power Switching REJ03G1277-0200 Rev.2.00 Oct 19, 2005 Features • Low on-resistance RDS on = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0603CGDQA
REJ03G1277-0200
PLSP0003ZB-A
RQK0603CGDQA
RQK0603CGDQATL-E
SC-59A
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RQK0603CGDQATL-H
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 Previous: REJ03G1277-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching
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RQK0603CGDQA
R07DS0307EJ0500
REJ03G1277-0400)
PLSP0003ZB-A
150ctronics
RQK0603CGDQATL-H
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RQK0603CGDQA
Abstract: RQK0603CGDQATL-E SC-59A
Text: RQK0603CGDQA Silicon N Channel MOS FET Power Switching REJ03G1277-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0603CGDQA
REJ03G1277-0400
PLSP0003ZB-A
RQK0603CGDQA
RQK0603CGDQATL-E
SC-59A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 Previous: REJ03G1277-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching
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RQK0603CGDQA
R07DS0307EJ0500
REJ03G1277-0400)
PLSP0003ZB-A
Note14
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Untitled
Abstract: No abstract text available
Text: RQK0603CGDQA Silicon N Channel MOS FET Power Switching REJ03G1277-0300 Rev.3.00 Dec 21, 2005 Features • Low on-resistance RDS on = 212 mΩ typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0603CGDQA
REJ03G1277-0300
PLSP0003ZB-A
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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RQK0603CGDQA
Abstract: RQK0603CGDQATL-E SC-59A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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