42756 regulator
Abstract: 42756 C207 capacitor j146 1300 transistor
Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA123501EC
PTVA123501EC
H-36248-2
42756 regulator
42756
C207 capacitor
j146
1300 transistor
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Untitled
Abstract: No abstract text available
Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package
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NPT2020
NPT2020
NDS-037
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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Radar pallet
Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933P-200
Radar pallet
RO6006
radar amplifier s-band
ATC100A
ATC100B
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Untitled
Abstract: No abstract text available
Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced
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PTVA123501EC
PTVA123501FC
PTVA123501EC
PTVA123501FC
H-36248-2
H-37248-2
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package
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Original
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NPT2020
NPT2020
NDS-037
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PDF
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Untitled
Abstract: No abstract text available
Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced
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PTVA123501EC
PTVA123501FC
PTVA123501EC
PTVA123501FC
H-36248-2
H-37248-2
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package
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Original
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NPT2020
NPT2020
NDS-037
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PDF
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RO6006
Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA101K02EV
PTVA101K02EV
H-36275-4
RO6006
TRANSISTOR c105
capacitor 6800 uf
r812
R809
011022
1030-1090MHz
SK101M100ST
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power tr unit j122 5 pin
Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Text: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA120251EA
PTVA120251EA
H-36265-2
power tr unit j122 5 pin
power tr unit j122
lm7805 3A
A 4562
L 4440
J233 AG
J56-1
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42756 regulator
Abstract: No abstract text available
Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA123501EC
PTVA123501EC
H-36248-2
42756 regulator
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Untitled
Abstract: No abstract text available
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933P-200
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Untitled
Abstract: No abstract text available
Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced
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PTVA123501EC
PTVA123501FC
PTVA123501EC
PTVA123501FC
H-36248-2
H-37248-2
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PDF
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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