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    Toshiba America Electronic Components RN2606(TE85L,F)

    TRANS 2PNP PREBIAS 0.3W SM6
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    RN2606 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2606 Toshiba PNP transistor Original PDF
    RN2606 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    RN2606(TE85L,F) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL PNP SM6 -50V -100A Original PDF

    RN2606 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN2601-2606

    Abstract: RN1601 RN1606 RN2503 RN2601 RN2602 RN2603 RN2604 RN2605 RN2606
    Text: RN2601～RN2606 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2601RN2606 RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 RN1601RN1606 RN2601 RN2602 RN2601-2606 RN1601 RN1606 RN2503 RN2603 RN2606

    Untitled

    Abstract: No abstract text available
    Text: RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including two devices in SM6 (super mini type with 6 leads)


    Original     		PDF RN2601 RN2606 RN2602 RN2603 RN2604 RN2605 RN1601 RN2601

    RN2601

    Abstract: RN2602 RN2603 2606 RN1601 RN2604 RN2605 RN2606
    Text: RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including two devices in SM6 (super mini type with 6 leads)


    Original     		PDF RN2601 RN2606 RN2602 RN2603 RN2604 RN2605 RN1601 RN2601 RN2603 2606 RN2606

    2606

    Abstract: RN1601 RN2601 RN2602 RN2603 RN2604 RN2605 RN2606
    Text: RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in SM6 (super mini type with 6 leads)


    Original     		PDF RN2601 RN2606 RN2602 RN2603 RN2604 RN2605 RN1601 RN2601 2606 RN2603 RN2606

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    RN1606

    Abstract: RN2601 RN2606 RN1601 RN1602 RN1603 RN1604 RN1605
    Text: RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SM6 (super-mini-type with six (6) leads)


    Original     		PDF RN1601 RN1606 RN1601, RN1602, RN1603 RN1604, RN1605, RN2601 RN2606 RN1606 RN2606 RN1602 RN1603 RN1604 RN1605

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    M51VA

    Abstract: IT8512E-L C4469 U4001D asus 2sc8802 25C0401 Q3705 C4477 G780
    Text: A B C D E F6Ve SCHEMATIC Revision 1.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-PENRYN 1 CPU-PENRYN(2) CPU CAP, Thermal Senor


    Original     		PDF ICS9LPR363 ISL6227 SI4800DY MAX8632 ISL6262C M51VA IT8512E-L C4469 U4001D asus 2sc8802 25C0401 Q3705 C4477 G780

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    RN1601

    Abstract: RN1602 RN1603 RN1604 RN1605 RN1606 RN2601 RN2606
    Text: RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in SM6 (super mini type with 6 leads)


    Original     		PDF RN1601 RN1606 RN1602 RN1603 RN1604 RN1605 RN2601 RN2606 RN1603 RN1606 RN2606

    RN1601

    Abstract: RN1602 RN1603 RN1604 RN1605 RN1606 RN2601 RN2606
    Text: RN1601～RN1606 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN1601RN1606 RN1601 RN1602 RN1603 RN1604 RN1605 RN1606 RN2601RN2606 RN1601 RN1602 RN1603 RN1606 RN2601 RN2606

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    YC 2604

    Abstract: TRANSISTOR MARKING YB RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 Transistor S 2606
    Text: TO SHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1 . 6 - 0.1


    OCR Scan     		PDF RN2601-RN2606 RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 RN1601-RN1606 RN2601 RN2602 YC 2604 TRANSISTOR MARKING YB RN2603 RN2604 RN2605 RN2606 Transistor S 2606

    sw 2604 ic

    Abstract: ic sw 2604 Transistor S 2606 YC+2604
    Text: TO SHIBA RN2601 ~RN2606 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN2601 RN2606 RN2601, RN2602, RN2603, RN2604, RN2605, RN1601 RN1606 sw 2604 ic ic sw 2604 Transistor S 2606 YC+2604

    YC 2604

    Abstract: toshiba Yb YC+2604
    Text: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN2601 RN2606 RN2601, RN2602, RN2603, RN2604, RN2605, RN1601 RN1606 YC 2604 toshiba Yb YC+2604

    inverter ic marking H.A

    Abstract: em 329
    Text: SILICON PNP EPITAXIAL TYPE RN2606 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND U n it in mm DRIVER + 0.2 CIRCUIT APPLICATIONS. 2.8 - 0 .3 + 0.2 1.6-0.1 -EE Including Two Devices in SM6 Super M ini Type w ith 6 leads oo Hu W ith B uilt-in Bias Resistors


    OCR Scan     		PDF RN2601RN2606 RN1601 RN1606 RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 RN2601-RN2606 inverter ic marking H.A em 329

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan     		PDF RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking

    YC 2604

    Abstract: No abstract text available
    Text: RN2601,2602,2603 RN2604,2605,2606 RN2601 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND U n it in mm DRIVER + 0.2 2.«-0 .3 CIRCUIT APPLICATIONS. + 0.2 1.6-0.1 D B- Including Two Devices in SM6 (Super Mini Type w ith 6 leads) oo W ith B uilt-in Bias Resistors


    OCR Scan     		PDF RN2601 RN2604 RN2601) RN1601 RN1606 RN2602 RN2603 RN2605 YC 2604

    RN1417

    Abstract: rn4601
    Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404


    OCR Scan     		PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601

    rr1206

    Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
    Text: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50


    OCR Scan     		PDF RN1509 RN1510 RN1511 RN1601 EN1602 RN1603 RN1604 RN1201 RN2201 10K/10K rr1206 RN10U RN1605