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    Toshiba America Electronic Components RN1423TE85LF

    TRANS PREBIAS NPN 50V 0.8A SMINI
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    DigiKey RN1423TE85LF Reel 9,000 3,000
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    RN1423TE85LF Cut Tape 2,822 1
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    RN1423TE85LF Digi-Reel 1
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    Mouser Electronics RN1423TE85LF 16,739
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    Verical RN1423TE85LF 22,433 172
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    RN1423TE85LF 876 131
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    Toshiba America Electronic Components RN1423(TE85LF)

    Trans Digital BJT NPN 50V 800mA 3-Pin S-Mini T/R - Tape and Reel (Alt: RN1423TE85LF)
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    Avnet Americas RN1423(TE85LF) Reel 20 Weeks 3,000
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    Avnet Asia RN1423(TE85LF) 24 Weeks 3,000
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    Toshiba America Electronic Components RN1423-TE85L

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    Bristol Electronics RN1423-TE85L 29,053
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    Toshiba America Electronic Components RN1423

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    Bristol Electronics RN1423 3,033
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    Quest Components RN1423 2,426
    • 1 $3.72
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    • 100 $3.72
    • 1000 $1.395
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    Toshiba America Electronic Components RN1423TE85L

    800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components RN1423TE85L 23,242
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    ComSIT USA RN1423TE85L 6,000
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    RN1423 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RN1423 Toshiba Pre-Biased Digital Transistor Original PDF
    RN1423 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    RN1423TE85LF Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SMINI Original PDF

    RN1423 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2401

    RN1423

    Abstract: RN1427 RN1424 RN1421 RN1422 RN1425 RN1426 RN2401 RN2406
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors


    Original
    PDF RN1421 RN1427 RN1422 RN1423 RN1424 RN1425 RN1426 800mA) RN1427 RN1424 RN2401 RN2406

    Untitled

    Abstract: No abstract text available
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors


    Original
    PDF RN1421 RN1427 RN1422 RN1423 RN1424 RN1425 RN1426 800mA)

    Untitled

    Abstract: No abstract text available
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2401

    Untitled

    Abstract: No abstract text available
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA)


    Original
    PDF RN1421â RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 800mA)

    RN1421

    Abstract: RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2401 RN2406
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2401 RN1424 RN1427 RN2406

    RN1425

    Abstract: Transistor 1427 RN1421 RN1422 RN1423 RN1424 RN1426 RN1427 RN2401 RN2406
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC (max) = 800mA) With built-in bias resistors


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2401 Transistor 1427 RN1424 RN1427 RN2406

    RN1424

    Abstract: RN1425 RN1427 RN1422 RN1421 RN1423 RN1426 RN2421 RN2427
    Text: RN1421RN1427 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2421RN2427 236MOD RN1424 RN1427 RN2421 RN2427

    RN1421

    Abstract: RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2401 RN2406
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2401 RN1424 RN1427 RN2406

    Untitled

    Abstract: No abstract text available
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)


    Original
    PDF RN1421â RN1427 RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, 800mA)

    RN1424

    Abstract: RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 RN2421 RN2427
    Text: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA)


    Original
    PDF RN1421RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 800mA) RN2421 RN1424 RN1427 RN2427

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original
    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original
    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1421 ~RN1427 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25


    OCR Scan
    PDF RN1421 RN1427 RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, 800mA)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN1421-RN1427 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (MAX.) = 800mA)


    OCR Scan
    PDF RN1421-RN1427 RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 800mA) RN2421

    1421-RN

    Abstract: No abstract text available
    Text: TO SH IBA RN 1421-RN 1427 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (MAX.) = 800 mA)


    OCR Scan
    PDF 1421-RN RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 RN2421 RN1421

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


    OCR Scan
    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan
    PDF RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan
    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    marking qd sc59

    Abstract: rn1425 RN1426
    Text: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process


    OCR Scan
    PDF RN1421-RN1427 800mA) RN2421 RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 SC-59 marking qd sc59