Zener Diode minimelf
Abstract: RLZ24 RLZ Series
Text: Formosa MS GLASS MINI-MELF Zener Diode RLZ SERIES List List. 1 Package outline. 2
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1000hrs.
DS-221725
Zener Diode minimelf
RLZ24
RLZ Series
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s9543
Abstract: MC68488 M6800 MC3447 hjst 5 hJST receiver motorola mc
Text: MC3447 ——-.—- ,— — .—-—._ L ———— .“,1 ———.——-—-—- 7 BiDIREcTIQNAL !NsTRuMENTATiQN Bus GPiBl TRANSCEIVER I“}ji; bus transceiver bidirectional Ibetween TTL. or MOS ELJ$ (~SB-1~~~, ofte~l ref[+rred nation is internally
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MC3447
s9543
MC68488
M6800
MC3447
hjst 5
hJST
receiver motorola mc
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uPD65
Abstract: PC10 PD64A PD6600A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD64A, 65 4-BIT SINGLE-CHIP MICROCONTROLLERS FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION The µPD64A and 65 feature low-voltage 2.0 V operation, and incorporate a carrier generator for infrared remote control transmission, a standby release function through key entry, and a programmable timer, making them ideal
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PD64A,
PD64A
PD64A:
uPD65
PC10
PD6600A
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PDF
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68b resistor code
Abstract: ASR10 PC10 PD6600A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD67B, 68B 4-BIT SINGLE-CHIP MICROCONTROLLERS FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 1.65 V low-voltage operation, carrier generator for infrared remote control transmission, standby release function through key input, and programmable timer, the µPD67B and 68B are ideal for infrared remote
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PD67B,
PD67B
PD67B:
PD68B:
68b resistor code
ASR10
PC10
PD6600A
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PDF
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uPD65
Abstract: E5EN PC10 PD64A PD6600A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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J27B
Abstract: 1N4148 SMD LL-34 1SS299 J36B RLZ27D J39C rlz5.1c RLZ9.1C 1N746 do-35 smd package J62B
Text: TOTTTÎ7I Diodes • Switching Diodes • High-Speed Switching Diodes # U nder D evelopm ent Absolute m aximum ratings Ta = 25'C Type r? g y uBy Ir(//A) Max. V hm (V) Vr (V) Ifm (mA) I;' (mA) Isurge (mA) 1s T| ( C) Tstg CC) V r(V) f(MHz) 90 80 400 130 600
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OCR Scan
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N5245
1N5245A
1N5245B
1N5246
1N5246A
1N5246B
1N5247
1N5247A
1N5247B
1N5248
J27B
1N4148 SMD LL-34
1SS299
J36B
RLZ27D
J39C
rlz5.1c
RLZ9.1C
1N746 do-35 smd package
J62B
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Untitled
Abstract: No abstract text available
Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply • Full CMOS, 6T Cell Separate Input and Output Ports ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -1 5 /2 0 /2 5 /3 5 ns (Military)
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P4C150
24-Pin
28-PIn
96-bit
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Untitled
Abstract: No abstract text available
Text: .025 [0.63] REF. 026 [0.66] .026 [0.66]- -,057±.008 [1 ,46±0.20] 120 [3.00] NOTES: 1 CAPACITANCE 1 0 0 0 h rs .): 2) CAP TOLERANCE: 3) DISSIPATION FACTOR: 4% 4) INSULATION RESISTANCE: 2 5 ‘C 1G0HM 5) 2 0 0 VDC RATED @ + 125"C 6) DIELECTRIC WITHSTANDING VOLTAGE: 7 0 0 VDC
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4000pF
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Untitled
Abstract: No abstract text available
Text: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board.
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MB85403A-40
MB85W3A-50
MB85403A
MB81C81A
44-pin
MB85403
MB81C81A,
MB85403A-40)
MB85403A-50)
HB854-03A-40
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b414
Abstract: 74LVC245PW LVC245 74LVC245DB 7551 74LVC245 74LVC245D 74lvc245 Philips
Text: Philips Semiconductors Product Specification Octal bus transceiver with direction pin; 3-state FEATURES • • • • • • 74LVC245 QUICK REFERENCE DATA GND = 0 V; Timb = 25 °C; t, = t, £ 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V In accordance with the JEDEC
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74LVC245
74LVC245
711002b
b414
74LVC245PW
LVC245
74LVC245DB
7551
74LVC245D
74lvc245 Philips
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Untitled
Abstract: No abstract text available
Text: 5 M U W DM©. High-Speed Parallel _> * . _• 4 ^ * First-In First Out Buffer Memories Q QS8201 512x9 QS8202 1Kx9 Advance Information FEATURES/BENEFITS First-In First-Out Dual Port RAM-based cell Asynchronous and Simultaneous Read and Write High Speed access 15 ns with zero fall-through time
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QS8201
512x9
QS8202
MIL-STD-883,
mil/600
QS8201/8202
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Z8000
Abstract: z8000 manual
Text: Z8030/Z8530 SCC Serial Communications Controller DISTINCTIVE CHARACTERISTICS Tw o IM.bps full duplex serial channels Each channel has independent oscillator, baud-rate generator, and PLL fo r clock recovery, dram atically reducing external com ponents. Programmable protocols
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Z8030/Z8530
CRC-16
Z8000*
Z8030
Z8000
Z8530
40-Pin
z8000 manual
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PDF
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C 2335
Abstract: No abstract text available
Text: File Number BUY69A, BUY69B, BUY69C 1237 High Voltage Silicon N-P-N Power Transistors TERM INAL D ESIG N A I lu N S For Horizontal-DefleCtion Circuits and Other High-Voltage Switching Applications Features: • Fast S w itching Speed ■ H igh Voltage Ratings: VCCx - 500-1000V
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BUY69A,
BUY69B,
BUY69C
00-1000V
TQ-204AA
C 2335
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Untitled
Abstract: No abstract text available
Text: P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES • Full CMOS, 6T Cell ■ Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Fully TTL Compatible Inputs and Outputs ■ Produced with PACE II Technology
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P4C150
24-Pln
096-bit
MIL-STD-883D
-12PC
-12DC
-12SC
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT52C4K9A1/ 8K9B2 4K x 9, 8K x 9 FIFO I^ IIC R O N 4K x 9 ,8K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View V ery h ig h sp eed : 15, 20, 25 an d 35n s access H ig h -p e rfo rm a n ce, lo w -p o w er C M O S p ro cess Sin g le + 5 V ± 1 0 % su p p ly
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MT52C4K9A1/
MT52C4K9A1
/MT52C8K9B2
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marking g9c
Abstract: No abstract text available
Text: 3flE D MICRON TECHNOLOGY INC • IMRN talllSMI OOOBO^fl 5 ADVANCE t -H C -z 2K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typ. (standby); 350mW typ. (active)
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350mW
T-46-35
marking g9c
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PDF
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Untitled
Abstract: No abstract text available
Text: MT52C9005 512 x 9 FIFO I^ IIC R O N F IF O 5 1 2 x 9 F IF O FEATURES • • • • • • • • • • • Very high speed: 15, 20, 25 and 35ns access High-perform ance, low-power CM OS process Single +5V ±10% supply Low power: 5mW typ. standby ; 350mW typ. (active)
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MT52C9005
350mW
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 36 TO 9 BIFIFO IDT 7MB2002 FEATURES: DESCRIPTION: • • • • This module is a FIFO that has up to 8 IDT72041s 4K x 9 on board. The module is bidirectional with 4K x 36 transforming to 16K x 9 on one side and back to 4K x 36 on the other side. All logic nec
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7MB2002
36-bit
IDT72041s
S13-90
IDT7MB2002
7MB2002
S13-91
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PDF
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i1991
Abstract: L1991
Text: ADVANCE • iii-y -ij MT52C9005 F IF O 5 1 2 x 9 F IF O FEATURES PIN ASSIGNMENT Top View V ery high speed: 1 5 ,2 0 ,2 5 and 35ns access H igh-perform ance, low -pow er CM O S process Single +5V ±10% supply Low power: 5m W typ. (standby); 350m W typ. (active)
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MT52C9005
28-Pin
i1991
L1991
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PDF
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smd m3c
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E » • blllSkT QQD5flSb Mlfi ■ fIRN M T52C9Ü20 883C 2K x 9 F IFO MICRON MILITARY FIFO 2K x 9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS P IN A S S IG N M E N T (Top View 28-Pin D IP (D15/D10) vfi 1 D8 I 2 D3I 3 D2I 4 01 15 DO I 6
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T52C9
MIL-STD-883,
28-Pin
D15/D10)
MT52C9Q20
MT5SC9020
smd m3c
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PDF
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Untitled
Abstract: No abstract text available
Text: QS7203, ö QS7204 High Speed CMOS 9-bit FIFO Buffer Memories 2Kx9: QS7203 4Kx9: QS7204 FEATURES/BENEFITS • • • • • • 10 ns flag and data access times Fully Asynchronous Read and Write Zero fall-through time Expandable in depth with no speed loss
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QS7203,
QS7204
QS7203
MIL-STD-883,
mil/600
QS7203
QS7204
18-bit
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PDF
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QS7203
Abstract: QS7204
Text: Q S 72 0 3, Q Q S 7204 High Speed CMOS :?£x* _ qstms 4Kx9: QS7204 PRELIM INARY r i r r v q Î- Buffer Memories FE A T U R E S /B E N E FIT S • • • • • • 15 ns flag and data access times Fully Asynchronous Read and Write Zero fall-through time
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QS7203,
QS7204
QS7203
QS7204
MIL-STD-883,
mil/600
QS72024
18-bit
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PDF
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NN514265
Abstract: nn514260 N092-FXX-00047 NN514260A 514265 EZ-34 tp NN514265A N092-FXX-00026
Text: NPN a NN514265/ NN514265A series EDO (Hyper Page) Mode CMOS 256Kx 16bit Dynamic RAM DESCRIPTION T he N N 514265/A series is a high perform ance C M OS D ynam ic Random A ccess M em ory organized as 262,144 w ords by 16 bits. The NN514265/A series is fabricated w ith advanced C M OS technology and designed w ith innovative design
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NN514265/
NN514265A
256Kx
16bit
514265/A
NN514265/A
NNS14265/
NN514265
nn514260
N092-FXX-00047
NN514260A
514265
EZ-34 tp
N092-FXX-00026
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PDF
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OAN222
Abstract: rb070l-40 ROHM RLS4148 ROHM RLZ5200B SERIES OAP236U DAN217 DAN235K T146 Diode RN731V T106 1SS355 UMD2 ROHM
Text: Diodes/Surface Mounting Type Quick Reference Small Signal Diodes -Package 1608 size Type Application , Vr V ; # EMD3 (SC-75) I 2012 size 3213 size ♦ UMD2 UMD3 (SOD-323) (SOT-323) UMD5 (-) 3415 size # # UMD4 (SC-82)
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SC-75)
SC-82)
OT-23)
SC-59)
SC-74A)
SC-74)
LL-34)
OD-323)
OT-323)
DA221
OAN222
rb070l-40
ROHM RLS4148
ROHM RLZ5200B SERIES
OAP236U
DAN217
DAN235K T146
Diode RN731V
T106
1SS355 UMD2 ROHM
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