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    Renesas Electronics Corporation

    Renesas Electronics Corporation RJK6035DPP-A0#T2

    MOSFETs POWER TRS1 HV-MOS/IGBT
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    Mouser Electronics RJK6035DPP-A0#T2 1,017
    • 1 $2.39
    • 10 $1.67
    • 100 $1.36
    • 1000 $1.23
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    Renesas Electronics Corporation RJK6006DPP-A0#T2

    MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER
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    Mouser Electronics RJK6006DPP-A0#T2 775
    • 1 $3.14
    • 10 $3.13
    • 100 $1.68
    • 1000 $1.62
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    Renesas Electronics Corporation RJK60S08DPK-M0#T0

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RJK60S08DPK-M0#T0 7,288
    • 1 $6.612
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    • 100 $6.612
    • 1000 $3.306
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    Renesas Electronics Corporation RJK60S7DPP-E0#T2

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    Quest Components RJK60S7DPP-E0#T2 278
    • 1 $18.558
    • 10 $18.558
    • 100 $14.434
    • 1000 $13.1968
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    RJK60 Datasheets (81)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    RJK6002DJE-00#Z0 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4A TO92 Original PDF
    RJK6002DPD Renesas Technology MOSFET, Switching; VDSS (V): 600; ID (A): 2; Pch : -; RDS (ON) typ. (ohm) @10V: 5.7; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 165; toff ( us) typ: -; Package: MP-3A Original PDF
    RJK6002DPD Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6002DPD-00#J2 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2A MP3A Original PDF
    RJK6002DPD-00-J2 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6002DPE-00#J3 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2A LDPAK Original PDF
    RJK6002DPH-E0#T2 Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 2A TO251 Original PDF
    RJK6006DPD-00#J2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5A MP3A Original PDF
    RJK6006DPP-A0#T2 Renesas Electronics MOSFET N-CH 600V 10A TO220FP Original PDF
    RJK6006DPP-E0#T2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5A TO220 Original PDF
    RJK6009DPP Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6009DPP-00-T2 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6011DJE Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6011DJE-00#Z0 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 0.1A TO92 Original PDF
    RJK6011DJE-00-Z0 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6012DPE Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6012DPE-00#J3 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A LDPAK Original PDF
    RJK6012DPE-00-J3 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6012DPP Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6012DPP-00-T2 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    RJK60 Datasheets Context Search

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    RJK6014DPP

    Abstract: RJK6014DPP-00-T2
    Text: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate


    Original     		RJK6014DPP REJ03G1531-0100 PRSS0003AB-A O-220FN) RJK6014DPP RJK6014DPP-00-T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6012DPP REJ03G1581-0200 PRSS0003AB-A O-220FN) Stor9044 PDF

    RJK6018DPK

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6018DPK R07DS0495EJ0200 REJ03G1537-0100) PRSS0004ZE-A RJK6018DPK PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP-E0 600V - 16A - MOS FET High Speed Power Switching R07DS0613EJ0100 Rev.1.00 Mar 19, 2012 Features • Low on-resistance RDS on = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		RJK6014DPP-E0 R07DS0613EJ0100 PRSS0003AG-A O-220FP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003AG-A


    Original     		RJK6006DPP-E0 R07DS0610EJ0100 PRSS0003AG-A O-220FP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S7DPK-M0 600V -30A - SJ MOS FET High Speed Power Switching R07DS0642EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.100  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK60S7DPK-M0 R07DS0642EJ0100 PRSS0004ZH-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching R07DS0614EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 2.0  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6026DPP-E0 R07DS0614EJ0100 PRSS0003AG-A O-220FP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPP R07DS0253EJ0200 Previous: REJ03G1582-0100 Rev.2.00 Feb 04, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6013DPP R07DS0253EJ0200 REJ03G1582-0100) PRSS0003AB-A O-220FN) imped9044 PDF

    RJK6032DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching R07DS0837EJ0200 Rev.2.00 Aug 06, 2012 Features • Low on-resistance RDS on = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original     		RJK6032DPD R07DS0837EJ0200 PRSS0004ZG-A RJK6032DPD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 600V - 2A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original     		RJK6002DPE R07DS0214EJ0100 PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A PDF

    RJK60S7DPP-E0

    Abstract: rjk60s7dpp
    Text: Preliminary Datasheet RJK60S7DPP-E0 600V -30A - SJ MOS FET High Speed Power Switching R07DS0643EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.100  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK60S7DPP-E0 R07DS0643EJ0100 PRSS0003AG-A O-220FP) RJK60S7DPP-E0 rjk60s7dpp PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK60S3DPP-E0 R07DS0637EJ0100 PRSS0003AG-A O-220FP) PDF

    RJK60S7DPQ-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S7DPQ-E0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0736EJ0200 Rev.2.00 Jul 26, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK60S7DPQ-E0 R07DS0736EJ0200 PRSS0003ZE-A O-247) RJK60S7DPQ-E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		RJK60S5DPQ-E0 R07DS0734EJ0100 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6012DPE R07DS0445EJ0300 REJ03G1481-0200) PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		RJK60S5DPP-E0 R07DS0641EJ0100 PRSS0003AG-A O-220FP) PDF

    PRSS0004ZG-A

    Abstract: RJK6006DPD
    Text: Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK6006DPD REJ03G1935-0100 PRSS0004ZG-A temperatur9044 PRSS0004ZG-A RJK6006DPD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0741EJ0001 Rev.0.01 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.53 Ω typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C) Outline RENESAS Package code: PRSS0004ZG-A


    Original     		RJK60S2DPD R07DS0741EJ0001 PRSS0004ZG-A PDF

    to3pfm

    Abstract: PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1
    Text: RJK6015DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G1752-0100 Rev.1.00 Nov 13, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate


    Original     		RJK6015DPM REJ03G1752-0100 PRSS0003ZA-A to3pfm PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1 PDF

    PRSS0004ZA-A

    Abstract: RJK6002DPD-00-J2 RJK6002DPD
    Text: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A Package name : MP-3A 2, 4 4 1.


    Original     		RJK6002DPD REJ03G1483-0100 PRSS0004ZA-A PRSS0004ZA-A RJK6002DPD-00-J2 RJK6002DPD PDF

    RJK6012DPE-00-J3

    Abstract: RJK6012DPE
    Text: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		RJK6012DPE REJ03G1481-0200 PRSS0004AE-B RJK6012DPE-00-J3 RJK6012DPE PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6013DPE R07DS0486EJ0200 REJ03G1535-0100) PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Features • Low on-resistance RDS on = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		RJK6024DPE R07DS0424EJ0200 PRSS0004AE-B PDF