to3pfm
Abstract: NTE2636 VCes 1500V
Text: NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2636
500mA,
to3pfm
NTE2636
VCes 1500V
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2SA1803
Abstract: 2SC4688
Text: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2
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2SA1803
2SC4688
2SA1803
2SC4688
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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2SA1804
Abstract: TO3PFM 2SC4689 Jmnic
Text: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2
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2SA1804
2SC4689
-120V
2SA1804
TO3PFM
2SC4689
Jmnic
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2SA1804
Abstract: 2SC4689
Text: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN
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2SC4689
2SA1804
2SA1804
2SC4689
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK1342
Abstract: 2SK1775
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SK1165
Abstract: 2SK1166 2SK1328 2SK1329
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SC4688
Abstract: 2SA1803
Text: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC4688
2SA1803
2SC4688
2SA1803
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2sd1911
Abstract: TO3PFM
Text: SavantIC Semiconductor Product Specification 2SD1911 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING
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2SD1911
2sd1911
TO3PFM
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2sk1405
Abstract: DSA003715
Text: 2SK1405 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast diode trr = 140 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1405
2sk1405
DSA003715
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2SK1341
Abstract: 2SK1859 DSA003759
Text: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain
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2SK1859
2SK1341
2SK1859
DSA003759
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HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC4796 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter
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2SC4796
D-85622
Hitachi DSA00164
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2SC5251
Abstract: Hitachi DSA00164
Text: 2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec typ • Isolated package TO-3P•FM (N) Outline TO-3PFM (N)
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2SC5251
D-85622
2SC5251
Hitachi DSA00164
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC4879 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.5 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter
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2SC4879
D-85622
Hitachi DSA00164
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2SC4747
Abstract: Hitachi DSA00164
Text: 2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings Ta = 25°C
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2SC4747
D-85622
2SC4747
Hitachi DSA00164
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2SD1910
Abstract: 2sd1910 transistor
Text: Silicon Diffused Power Transistor 2SD1910 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA
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2SD1910
16KHz
300mA;
2SD1910
2sd1910 transistor
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Untitled
Abstract: No abstract text available
Text: 2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output HITACHI Features • High breakdown voltage VCB0 = 1500 V • High speed switching tf = 0.15 ¡iscc typ. at fH= 64 kHz • Isolated package TO-3PFM Outline TO-3PFM 1. Base
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2SC5448
ADE-208-577
64kHz
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Untitled
Abstract: No abstract text available
Text: 2SC4879 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.5 |js • High breakdown voltage VCB0 = 1700 V • Isolated package TO-3PFM Outline 2SC4879 Absolute Maximum Ratings Ta = 25 °C
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2SC4879
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Untitled
Abstract: No abstract text available
Text: 2SC4963 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4963 Absolute Maximum Ratings Ta = 25 °C
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2SC4963
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2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1202
2SK1203
2SK1204
2SK696
2SK1275
4AM14
6am12
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
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Untitled
Abstract: No abstract text available
Text: 2SC5219 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCES= 1700 V • High speed switching tf = 0.15 |isec typ • Built-in damper diode type • Isolated package
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2SC5219
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