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    RJK03M2DPA Search Results

    RJK03M2DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK03M2DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 30V 45A 2.8Mohm Wpak Visit Renesas Electronics Corporation
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    RJK03M2DPA Price and Stock

    Renesas Electronics Corporation RJK03M2DPA-00#J5A

    MOSFET N-CH 30V 45A 8WPAK
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    DigiKey RJK03M2DPA-00#J5A Reel 6,000 3,000
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    RJK03M2DPA-00#J5A Digi-Reel 1
    • 1 $2.63
    • 10 $1.696
    • 100 $1.1634
    • 1000 $0.86128
    • 10000 $0.86128
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    RJK03M2DPA-00#J5A Cut Tape 1
    • 1 $2.63
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    • 100 $1.1634
    • 1000 $0.86128
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    Avnet Americas RJK03M2DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK03M2DPA-00#J5A
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    Renesas Electronics America RJK03M2DPA-00#J5A Tape & Reel (TR) 6,000 1
    • 1 $2.63
    • 10 $1.696
    • 100 $1.1634
    • 1000 $0.86128
    • 10000 $0.75875
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    RJK03M2DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK03M2DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 45A WPAK Original PDF

    RJK03M2DPA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK03M2DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original
    PDF RJK03M2DPA R07DS0766EJ0200 PWSN0008DE-A RJK03M2DPA

    RJK03M2DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M2DPA Silicon N Channel Power MOS FET Power Switching R07DS0766EJ0110 Rev.1.10 May 28, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 m typ. (at VGS = 10 V)


    Original
    PDF RJK03M2DPA R07DS0766EJ0110 PWSN0008DC-B RJK03M2DPA

    RJK03M2DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M2DPA Silicon N Channel Power MOS FET Power Switching R07DS0766EJ0110 Rev.1.10 May 28, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 m typ. (at VGS = 10 V)


    Original
    PDF RJK03M2DPA R07DS0766EJ0110 PWSN0008DC-B RJK03M2DPA

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original
    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original
    PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1