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    RJK0381DPA Search Results

    RJK0381DPA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0381DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK0381DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET, WPAK(3F), /Embossed Tape Visit Renesas Electronics Corporation
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    RJK0381DPA Price and Stock

    Rochester Electronics LLC RJK0381DPA-WS#J53

    N-CHANNEL POWER MOSFET
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    DigiKey RJK0381DPA-WS#J53 Bulk 2,110 319
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    Rochester Electronics LLC RJK0381DPA-00#J5A

    MOSFET N-CH 30V 40A 8WPAK
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    DigiKey RJK0381DPA-00#J5A Bulk 2,000 319
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    Renesas Electronics Corporation RJK0381DPA-WS#J53

    - Tape and Reel (Alt: RJK0381DPA-WS#J53)
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    Avnet Americas RJK0381DPA-WS#J53 Reel 4 Weeks 383
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    Rochester Electronics RJK0381DPA-WS#J53 2,110 1
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    Renesas Electronics Corporation RJK0381DPA-00#J5A

    - Tape and Reel (Alt: RJK0381DPA-00#J5A)
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    Avnet Americas RJK0381DPA-00#J5A Reel 4 Weeks 383
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    Rochester Electronics RJK0381DPA-00#J5A 2,000 1
    • 1 $0.952
    • 10 $0.952
    • 100 $0.8949
    • 1000 $0.8092
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    RJK0381DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK0381DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A WPAK Original PDF

    RJK0381DPA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0381DPA REJ03G1829-0210 PWSN0008DC-A current9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0381DPA 30V, 40A, 4.5m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0939EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current


    Original     		PDF RJK0381DPA R07DS0939EJ0400 PWSN0008DE-A

    RJK0381DPA-00

    Abstract: No abstract text available
    Text: Preliminary RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0200 Power Switching Rev.2.00 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0381DPA REJ03G1829-0200 PWSN0008DA-A RJK0381DPA-00

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0381DPA 30 V, 40 A, 4.5 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0939EJ0300 Previous: REJ03G1829-0210 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		PDF RJK0381DPA R07DS0939EJ0300 REJ03G1829-0210) PWSN0008DC-B

    RJK0381DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0381DPA REJ03G1829-0210 PWSN0008DC-A Chann9044 RJK0381DPA

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    HAT1128R

    Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
    Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response


    Original     		PDF RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK