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    Rochester Electronics LLC RJH60D2DPP-E0-T2

    RJH60D2DPP - IGBT 600V 25A
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    DigiKey RJH60D2DPP-E0-T2 Bulk 28,209 114
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    Rochester Electronics LLC RJH60D1DPP-E0-T2

    IGBT TRENCH 600V 20A TO-220FP
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    DigiKey RJH60D1DPP-E0-T2 Bulk 1,538 198
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    Rochester Electronics LLC RJH60D7DPQ-E0-T2

    IGBT TRENCH 600V 90A TO-247
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    DigiKey RJH60D7DPQ-E0-T2 Bulk 1,012 30
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    Renesas Electronics Corporation RJH60D6DPK-00-T0

    IGBT TRENCH 600V 80A TO-3P
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    Renesas Electronics Corporation RJH60D6DPM-00-T1

    IGBT TRENCH 600V 80A TO-3PFM
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    RJH60D Datasheets (22)

    Part
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    PDF
    RJH60D0DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO3P Original PDF
    RJH60D0DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO3PFM Original PDF
    RJH60D0DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-247 Original PDF
    RJH60D1DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF
    RJH60D1DPP-E0#T2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF
    RJH60D1DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 20.8W TO220FL Original PDF
    RJH60D2DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 63W LDPAK Original PDF
    RJH60D2DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 27.2W TO220FL Original PDF
    RJH60D3DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 35A LDPAK Original PDF
    RJH60D3DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 35A 30W TO220FL Original PDF
    RJH60D5BDPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO-247 Original PDF
    RJH60D5DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO3P Original PDF
    RJH60D5DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 45W TO3PFM Original PDF
    RJH60D5DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W TO-247 Original PDF
    RJH60D6DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 260W TO3P Original PDF
    RJH60D6DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 50W TO-3PFM Original PDF
    RJH60D6DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 260W TO-247 Original PDF
    RJH60D7ADPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO-3P Original PDF
    RJH60D7BDPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO-247 Original PDF
    RJH60D7DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO3P Original PDF

    RJH60D Datasheets Context Search

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    rjh60d2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D2DPP-M0 R07DS0160EJ0400 PRSS0003AF-A O-220FL) rjh60d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5BDPQ-E0 R07DS0794EJ0200 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPQ-E0 R07DS0738EJ0100 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7DPK R07DS0165EJ0400 PRSS0004ZE-A PDF

    RJH60D1

    Abstract: RJH60D1DPP-M0 PRSS0003AF-A RJH60
    Text: Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0200 Previous: REJ03G1839-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D1DPP-M0 R07DS0158EJ0200 REJ03G1839-0100) PRSS0003AF-A O-220FL) revers9044 RJH60D1 RJH60D1DPP-M0 PRSS0003AF-A RJH60 PDF

    RJH60

    Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
    Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0100 PRSS0003ZA-A em9044 RJH60 RJH60D0 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60

    Abstract: PRSS0003ZA-A rjh60d
    Text: Preliminary Datasheet RJH60D6DPM Silicon N Channel IGBT Application: Inverter R07DS0175EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPM R07DS0175EJ0200 PRSS0003ZA-A em9044 RJH60 PRSS0003ZA-A rjh60d PDF

    RJH60D6DPK

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPK R07DS0164EJ0400 PRSS0004ZE-A RJH60D6DPK PDF

    RJH60D1DPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D1DPE R07DS0157EJ0400 PRSS0004AE-B RJH60D1DPE PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPM R07DS0175EJ0300 PRSS0003ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D1DPP-E0 600V - 10A - IGBT Application: Inverter R07DS0893EJ0100 Rev.1.00 Nov 01, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D1DPP-E0 R07DS0893EJ0100 PRSS0003AG-A O-220FP) PDF

    RJH60D3DPE

    Abstract: rjh60d3
    Text: Preliminary Datasheet RJH60D3DPE 600V - 17A - IGBT Application: Inverter R07DS0161EJ0500 Rev.5.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D3DPE R07DS0161EJ0500 PRSS0004AE-B RJH60D3DPE rjh60d3 PDF

    PRSS0003ZH-A

    Abstract: RJH60 RJH60D5DPQ RJH60D5
    Text: Preliminary Datasheet RJH60D5DPQ-A0 600 V - 37 A - IGBT Application: Inverter R07DS0527EJ0100 Rev.1.00 Aug 26, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPQ-A0 R07DS0527EJ0100 PRSS0003ZH-A O-247A) PRSS0003ZH-A RJH60 RJH60D5DPQ RJH60D5 PDF

    rjh60d2

    Abstract: PRSS0003AF-A TO-220FL TO220FL RJH60D2DPP-M0 RJH60 RJH60D2DPP-M0#T2
    Text: Preliminary RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0003AF-A Package name: TO-220FL C 1. Gate


    Original     		RJH60D2DPP-M0 REJ03G1841-0100 PRSS0003AF-A O-220FL) rjh60d2 PRSS0003AF-A TO-220FL TO220FL RJH60D2DPP-M0 RJH60 RJH60D2DPP-M0#T2 PDF

    RJH60D0DPK

    Abstract: jeita sc-65
    Text: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0400 PRSS0004ZE-A RJH60D0DPK jeita sc-65 PDF

    RJH60D7DPQ-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7DPQ-E0 R07DS0740EJ0100 PRSS0003ZE-A O-247) RJH60D7DPQ-E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPQ-E0 600V - 40A - IGBT Application: Inverter R07DS0739EJ0200 Rev.2.00 Jun 20, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPQ-E0 R07DS0739EJ0200 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0400 PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7BDPQ-E0 R07DS0795EJ0200 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPK R07DS0164EJ0400 PRSS0004ZE-A PDF

    RJH60D0

    Abstract: RJH60 PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60D0DPK R07DS0155EJ0200 Previous: REJ03G1845-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0200 REJ03G1845-0100) PRSS0004ZE-A di9044 RJH60D0 RJH60 PRSS0004ZE-A SC-65 PDF

    rjh60d2

    Abstract: RJH60 rjh60d
    Text: Preliminary Datasheet RJH60D2DPE R07DS0159EJ0200 Previous: REJ03G1842-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D2DPE R07DS0159EJ0200 REJ03G1842-0100) PRSS0004AE-B t9044 rjh60d2 RJH60 rjh60d PDF