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RJH60 Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00 Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D0DPM R07DS0156EJ0100 PRSS0003ZA-A em9044 RJH60 RJH60D0 PRSS0003ZA-A RJH60D0DPM-00	PDF

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RJH60

Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Original

RJH60D0DPM R07DS0156EJ0100 PRSS0003ZA-A em9044 RJH60 RJH60D0 PRSS0003ZA-A RJH60D0DPM-00

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