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    RG-2A DIODE Search Results

    RG-2A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RG-2A DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RG-2A Diode

    Abstract: No abstract text available
    Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. VRM (V) RG 2Z 200 I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot VF (V) max 400 RG 2A 600 t rr ➀ (ns)


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    Cur40 UL94V-0 RG-2A Diode PDF

    fmgg2c

    Abstract: 10zrl RG10Z FMX-G16S fmng12 FMX-G26S FMCG28 FMXG16S fmxg16 FMPG12
    Text: Ultra-Fast Recovery Rectifier Diodes 4-3 4-3-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (nS) (nS) 25 100 50 Axial(A0) 3 EG01A 30 100 50 Axial(E0) 4 AG01A 30 100 50 Axial(E1) 5 EG 1A 50 100 50 Axial(R1) 6 RG 10A 50 100 50 Axial(R2) 7 RG 2A AG01Y 1.0


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    AG01Y EG01Y AG01Z EG01Z SFPL-52 SFPL-62 AL01Z EL02Z SFPX-62 SPX-G32S fmgg2c 10zrl RG10Z FMX-G16S fmng12 FMX-G26S FMCG28 FMXG16S fmxg16 FMPG12 PDF

    marking WMM

    Abstract: E130L ERC05
    Text: ERC05 1 - t a m m .2A y * * - k : O u tlin e D ra w in g s _ GENERAL USE RECTIFIER DIODE -N- — 2 0 M IN - 7.5 - 28MIN — • ¡N id i : F e a tu re s • If— Hi gh s u rg e c u rre n t • ¡ f t if f S 14 ■ S H ig h re lia b ility tjv I M a rk in g


    OCR Scan
    ERC05 marking WMM E130L PDF

    RG-2A Diode

    Abstract: PG-TO-247-3 K03N1202 3V10A
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2 IKW03N120H2 K03N1202 PG-TO-247-3-1 O-247AC) PG-TO-220-3-1 O-220AB) RG-2A Diode PG-TO-247-3 3V10A PDF

    IKW03N120H2

    Abstract: k03h1202 smps* ZVT 15v 60w smps Electronic ballast 220 v 40W IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 IKW03N120H2 K03H1202
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2 IKW03N120H2 PG-TO-247-3 PG-TO-220-3-1 K03H120nces. IKW03N120H2 k03h1202 smps* ZVT 15v 60w smps Electronic ballast 220 v 40W IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 IKW03N120H2 K03H1202 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKB03N120H2 K03N1202 P-TO-263-3-2 O-263AB) IKB03N120H2 Q67040-S4597 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKB03N120H2 P-TO-220-3-45 K03H1202 PDF

    K02N120

    Abstract: No abstract text available
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s


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    SKB02N120 PG-TO-263-3-2 K02N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKB03N120H2 K03H1202 P-TO-220-3-45 IKB03N120H2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKB03N120H2 K03H1202 PG-TO263-3-2 IKB03N120H2 PDF

    k03h1202

    Abstract: smps* ZVT Electronic ballast 220 v 40W f 9222 l 15v 60w smps DIODE 3A 1000V IKB03N120H2 IKP03N120H2
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKB03N120H2 P-TO-220-3-45 K03H1202 k03h1202 smps* ZVT Electronic ballast 220 v 40W f 9222 l 15v 60w smps DIODE 3A 1000V IKB03N120H2 IKP03N120H2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original
    IKP03N120H2 IKW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 15mes. PDF

    Untitled

    Abstract: No abstract text available
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •     Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers:


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    IKP03N120H2 IKW03N120H2 PG-TO-247-3 PG-TO-220-3-1 PDF

    K02N120

    Abstract: No abstract text available
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


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    SKB02N120 40lower P-TO-263-3-2 O-263AB) SKB02N120 K02N120 K02N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  2 generation HighSpeed-Technology for 1200V applications offers:


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    IKB03N120H2 PG-TO263-3-2 PDF

    K03H1202

    Abstract: 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2 IKW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 K03H1202 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21 PDF

    P-TO-247-3-1

    Abstract: smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2
    Text: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2, IKW03N120H2 IKB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) P-TO-247-3-1 smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2 PDF

    k03h1202

    Abstract: PG-TO-247-3-1 IKW03N120H2
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2 IKW03N120H2 IKW03N120H2 140kHz k03h1202 PG-TO-247-3-1 PDF

    K02N120

    Abstract: fast recovery diode 1a trr 200ns
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:


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    SKB02N120 P-TO-220-3-45 SKB02N120 K02N120 fast recovery diode 1a trr 200ns PDF

    k02n120

    Abstract: PG-TO-263-3-2 SKB02N120 k02n12
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


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    SKB02N120 PG-TO-263-3-2 k02n120 PG-TO-263-3-2 SKB02N120 k02n12 PDF

    K02N120

    Abstract: fast recovery diode 2a trr 200ns
    Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


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    SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120 fast recovery diode 2a trr 200ns PDF

    15v 60w smps

    Abstract: Q67040-S4594 Q67040-S4595 IKB03N120H2 IKP03N120H2 IKW03N120H2
    Text: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original
    IKP03N120H2, IKW03N120H2 IKB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) 15v 60w smps Q67040-S4594 Q67040-S4595 IKB03N120H2 IKP03N120H2 IKW03N120H2 PDF

    K06N60

    Abstract: fast recovery diode 2a trr 200ns SKB02N60
    Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKB02N60 P-TO-263-3-2 O-263AB) K06N60 fast recovery diode 2a trr 200ns SKB02N60 PDF

    fast recovery diode 2a trr 200ns

    Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
    Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 fast recovery diode 2a trr 200ns fast recovery diode 1a trr 200ns K06N60 Q67040-S4214 PDF