K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-263-3-2
O-263AB)
K06N60
fast recovery diode 2a trr 200ns
SKB02N60
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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K06N60
Abstract: PG-TO-263-3-2 SKB06N60
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB06N60
PG-TO-263-ain
K06N60
PG-TO-263-3-2
SKB06N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
K06N60HS
P-TO-220-3-45
SKB06N60HS
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K06N60
Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
PG-TO-263-3-2
K06N60HS
K06N60
k06n60hs
25E-4
PG-TO-263-3-2
SKB06N60HS
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Untitled
Abstract: No abstract text available
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB06N60
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K06N60
Abstract: No abstract text available
Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter
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SKP06N60
SKA06N60
PG-TO-220-3-1
O-220AB)
O-220,
SKA06N60
K06N60
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K06N60
Abstract: SKA06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835 SKP06N60
Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter
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SKP06N60
SKA06N60
PG-TO-220-3-1
O-220AB)
O-220,
SKA06N60
K06N60
K06N60 TO-220F infineon
IGBT 1000V .100A
IGBT 0835
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K06N60
Abstract: TO220 package infineon K06N60 SMD
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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SKB06N60
O-220,
SKB06N60
K06N60
TO220 package infineon
K06N60 SMD
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K06N60
Abstract: No abstract text available
Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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SKB06N60
O-220,
SKB06N60
K06N60
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K06N60
Abstract: SKB02N60 PG-TO-263-3-2
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N60
PG-TO-263-ain
K06N60
SKB02N60
PG-TO-263-3-2
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K06N60
Abstract: fast recovery diode 600v 12A SKP06N60 PG-TO-220-3-1 PG-TO220-3-31 SKA06N60
Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter
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SKP06N60
SKA06N60
PG-TO-220-3-1
O-220AB)
O-220,
K06N60
fast recovery diode 600v 12A
SKP06N60
PG-TO-220-3-1
PG-TO220-3-31
SKA06N60
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K06N60
Abstract: diode 6A 600v
Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter
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SKP06N60
SKA06N60
PG-TO-220-3-1
O-220AB)
O-220,
SKA06N60
K06N60
diode 6A 600v
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
SKB02N60
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
K06N60HS
P-TO-263-3-2
Q67040S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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K06N60
Abstract: No abstract text available
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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SKB06N60HS
K06N60HS
P-TO-220-3-45
SKB06N60HS
K06N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
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fast recovery diode 2a trr 200ns
Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
fast recovery diode 2a trr 200ns
fast recovery diode 1a trr 200ns
K06N60
Q67040-S4214
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Untitled
Abstract: No abstract text available
Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: Motor controls, Inverter
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SKP06N60
SKA06N60
PG-TO-220-3-1
O-220AB)
O-220,
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