800w rf power amplifier circuit diagram
Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in
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1990s.
2010are
50VRFLDMOSWP
800w rf power amplifier circuit diagram
MRF6VP11KH
1000w power amplifier circuit diagram
200W PUSH-PULL
1000w power AMPLIFIER pcb circuit
amplifier circuit diagram class D 1000w
500w FM power amplifier circuit diagram
MRFE6VP6300H
RF Amplifier 500w 175 mhz
1000w class d circuit diagram schematics
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Untitled
Abstract: No abstract text available
Text: PTF 10123* PRELIMINARY GOLDMOS Field Effect Transistor 5 Watts, 2.1–2.2 GHz Description The 10123 is a GOLDMOS FET intended for large signal applications from 2.1 to 2.2 GHz. It operates with 47% efficiency and 11 db minimum gain. Nitride surface passivation and gold metallization ensure
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1-877-GOLDMOS
1522-PTF
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PTF080601
Abstract: PTF080601A PTF080601E PTF080601F 30248
Text: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF080601
PTF080601
PTF080601A
PTF080601E
PTF080601F
30248
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PTF 102001* 75 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 102001 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates with 13 dB minimum gain. Nitride surface passivation and full gold metallization
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1-877-GOLDMOS
1522-PTF
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E101 FET
Abstract: transistor E101
Text: PRELIMINARY PTF 10160* 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The 10160 is an input and output matched 85 watt LDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. This device operates at 53% efficiency with 15 dB of gain minimum. Full
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1-877-GOLDMOS
1301-PTF
E101 FET
transistor E101
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PTFA211001E
Abstract: No abstract text available
Text: Product Brief PTFA211001E PTFA211001F WCDMA RF Power FET The PTFA211001E and PTFA211001F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211001E and
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PTFA211001E
PTFA211001F
PTFA211001E
PTFA211001F
B134-H8498-X-0-7600
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PTFA211801E
Abstract: PTFA211801F
Text: Product Brief PTFA211801E PTFA211801F WCDMA RF Power FET The PTFA211801E and PTFA211801F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211801E and
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PTFA211801E
PTFA211801F
PTFA211801E
PTFA211801F
B134-H8501-X-0-7600
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PTF102004
Abstract: 16AF
Text: PRELIMINARY PTF 102004* 120 Watts, 2.1–2.2 GHz GOLDMOS FET Description The PTF 102004 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 120 watts power output and 13 dB gain. Nitride surface passivation and full gold
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1-877-GOLDMOS
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PTF102004
16AF
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PTFA142401EL
Abstract: 33288 PTFA142401FL DVB-T acpr H-33288-2
Text: Preliminary PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz
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PTFA142401EL
PTFA142401FL
PTFA142401EL
PTFA142401FL
240-watt
33288
DVB-T acpr
H-33288-2
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Untitled
Abstract: No abstract text available
Text: GOLDMOS PTF 10119 Field Effect Transistor 12 Watts, 2.1–2.2 GHz Description The PTF 10119 is a 12–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 43% efficiency with 11 dB typical gain. Nitride surface passivation and full gold metallization
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1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: Product Brief PTFA180801E PTFA180801F GSM/EDGE RF Power FET The PTFA180801E and PTFA180801F Performance Two devices from our next generation of thermally enhanced GOLDMOS devices, these high-gain transistors bring rugged quality to your amplifier designs. Specifically optimized for GSM/EDGE applications,
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PTFA180801E
PTFA180801F
PTFA180801F
B134-H8503-X-0-7600
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SEK4
Abstract: No abstract text available
Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808FV
PTFC262808FV
280-watt
H-37275G-6/2
SEK4
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GS 9425
Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Text: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
PTFA092211FL*
H-34288-2
GS 9425
package tray design dwg
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Abstract: No abstract text available
Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808FV
PTFC262808FV
280-watt
H-37275G-6/2
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Untitled
Abstract: No abstract text available
Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output
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PXFC192207FH
PXFC192207FH
220-watt
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siemens ma
Abstract: No abstract text available
Text: PRELIMINARY PTF 10065* 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output and has 11 dB gain. Nitride surface passivation
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1-877-GOLDMOS
1301-PTF
siemens ma
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PTFC262808SV
Abstract: No abstract text available
Text: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with
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PTFC262808SV
PTFC262808SV
280-watt
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TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
TL205
TL2322
RO4350
tl233
tl241
587-1818-2-ND
c201
017 C202
tl147
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Abstract: No abstract text available
Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features
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PXAC260602FC
PXAC260602FC
60-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features
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PXAC261002FC
PXAC261002FC
100-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's
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PTFC210202FC
PTFC210202FC
10-watt
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Abstract: No abstract text available
Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's
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PTFC210202FC
PTFC210202FC
10-watt
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ATC100B4R3CW500X
Abstract: PTVA035002EV V1
Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down
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PTVA035002EV
PTVA035002EV
a035002
ATC100B4R3CW500X
PTVA035002EV V1
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