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    Text: Product Brief PTFA180801E PTFA180801F GSM/EDGE RF Power FET The PTFA180801E and PTFA180801F Performance Two devices from our next generation of thermally enhanced GOLDMOS devices, these high-gain transistors bring rugged quality to your amplifier designs. Specifically optimized for GSM/EDGE applications,


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    PDF PTFA180801E PTFA180801F PTFA180801F B134-H8503-X-0-7600