RFP8P06E Search Results

RFP8P06E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFP8P06E		Fairchild Semiconductor	8A, 60V, 0.300 Ohm, P-Channel Power MOSFET		Original	PDF
RFP8P06E		Harris Semiconductor	8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs		Original	PDF
RFP8P06E		Intersil	8A, 60V, 0.300 ?, P-Channel Power MOSFETs		Original	PDF
RFP8P06E		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

RFP8P06E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8A60V Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254 Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 8A60V RFD8P06E RFD8P06ESM9A TB334 bv254	PDF
RFD8P06E Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06 Text: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model	Original	RFD8P06E, RFD8P06ESM, RFP8P06E O-220AB O-251AA RFD8P06ESM RFP8P06E 49e-10 1e-30 RFD8P06E RFD8P06ESM9A IS415 BV202 D8P06	PDF
RFD8P06E Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E RFD8P06E RFD8P06ESM9A TB334	PDF
Untitled Abstract: No abstract text available Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFD8P06E, RFD8P06ESM, RFP8P06E 175oC TB334	PDF
irf540n irf640 Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S	Original	BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460	PDF
RFD14N05 spice Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance	Original	HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S	PDF
IRF510N Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220 Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5	Original	MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
complementary of irf830 Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3	Original	BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary	PDF
Untitled Abstract: No abstract text available Text: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E 0-300i2 49e-10 1e-30 48e-4 42e-7) 40e-3	PDF
8A60V Abstract: rfp8p06e Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E AN7254 8A60V	PDF
FP8P06E Abstract: 9l2i sclm PSPICE PLIC Text: RFD8P06E, RFD8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U	OCR Scan	RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 1e-30 48e-4 42e-7) 40e-3 FP8P06E 9l2i sclm PSPICE PLIC	PDF
100V 60A Mosfet Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .	OCR Scan	IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode	PDF
Power MOSFETs Abstract: p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet Text: i n t e r cil P-Channel Standard Gate _ Power MOSFETs \| I m P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s.	OCR Scan	RFD15P05, RFD15P05SM, RFP15P05 RFD15P06, RFD15P06SM, RFP15P06 RFD8P05, RFD8P05SM, RFP8P05 RFD8P06E, Power MOSFETs p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet	PDF