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    onsemi RFP12N10L

    MOSFET N-CH 100V 12A TO220-3
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    Chip1Stop RFP12N10L 1,451
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    Rochester Electronics LLC RFP12N18

    N-CHANNEL POWER MOSFET
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    Rochester Electronics LLC RFP12N06RLE

    N-CHANNEL POWER MOSFET
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    Renesas Electronics Corporation RFP12N06RLE

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    Renesas Electronics Corporation RFP12N18

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    RFP12N Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP12N06 Fairchild Semiconductor 17A, 60V, 0.071 ?, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    RFP12N06RLE Fairchild Semiconductor 17A, 60V, 0.071 ?, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    RFP12N06RLE Intersil 12A, 60V, 0.135 ?, N-Channel, Logic Level, Power MOSFETs Original PDF
    RFP12N06RLE Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP12N06RLE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP12N08 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFP12N08 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP12N08 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. Scan PDF
    RFP12N08 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP12N08 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFP12N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP12N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP12N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP12N08L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP12N08L General Electric N-channel logic level power field-effect transistor (LL FET). 80V, 12A. Scan PDF
    RFP12N08L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP12N08L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP12N10 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFP12N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP12N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. Scan PDF

    RFP12N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12N6LE

    Abstract: 12n06rle 630E1
    Text: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet October 1999 File Number 2407.5 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title FD1 06R , D12 6RL M, P12 6RL bt A, V, 71 m, Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN


    Original     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM 12N6LE 12n06rle 630E1

    f12n10l

    Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L f12n10l f12n10 AN7254 AN7260 RFP12N10L TB334

    12N6LE

    Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
    Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet


    Original     		PDF 2N06R RFD12 N06RL RFP12 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 12N6LE 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06

    F12N10L

    Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12N10L f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334

    F12N10L

    Abstract: f12n10
    Text: RFP12N10L Data Sheet Title FP1 10L bt A, 0V, 00 m, gic vel, Cha el wer OST utho July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use


    Original     		PDF RFP12N10L TA09526. F12N10L f12n10

    12N6LE

    Abstract: 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334
    Text: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE DRAIN (FLANGE) GATE SOURCE RFD12N06RLE RFD12N06RLESM


    Original     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM O-220AB 12N6LE 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334

    F12N10L

    Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
    Text: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12N10L f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig

    Untitled

    Abstract: No abstract text available
    Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L RFP12N10L

    F12n10

    Abstract: No abstract text available
    Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12n10

    cgs resistor

    Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
    Text: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,


    Original     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 RFM12 RFP12 TA09594. RFM12N08 cgs resistor RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig

    RFP12N18

    Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
    Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20


    Original     		PDF RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12

    12n08

    Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
    Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92CS-3374I RFM12N08 RFM12N10 RFP1I2N08 RFM12N18, 12n08 rca application notes pt 4115 TA9284 AN7260 AN7254 RFP12N08

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


    OCR Scan     		PDF RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"

    Untitled

    Abstract: No abstract text available
    Text: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)


    OCR Scan     		PDF RFD12N06RLE, RFD12N06RLESM RFP12N06RLE ary1994 RFD12N06RLE O-251) O-252) AN7254 AN-7260.

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


    OCR Scan     		PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    F12N10L

    Abstract: f12n10
    Text: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFP12N10L O-22QAB 200i2 AN7254 AN7260 RFP12N101Test F12N10L f12n10

    Untitled

    Abstract: No abstract text available
    Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.

    RFP12N08

    Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
    Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284

    RFP12N20

    Abstract: RFP12N18 RFM12N18 RFM12N20
    Text: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92cs-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20*

    Untitled

    Abstract: No abstract text available
    Text: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 250S2 TB334 TA09293. 75BVnss 75BVncc 50BVd

    RFP12N06RLE

    Abstract: RFD12N06RLE RFD12N06RLESM kos30
    Text: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE


    OCR Scan     		PDF RFD12N06RLE, RFD12N06RLESM RFP12N06RLE AN72S4 AN-72B0. RFD12N06RLESM, RFD12N06RLE kos30

    12N6LE

    Abstract: 12N06RLE 12N06RLESM
    Text: in te g ri I RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE D a ta S h e e t O c to b e r 1999 2407.5 U ltraS ^ 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F ile N u m b e r Features JE D EC 7 0 -2 5 1 A A JE D E C TO -252AA SOURCE


    OCR Scan     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE -252AA RFD12N -220A O-251AA AN7260. 12N6LE 12N06RLE 12N06RLESM

    RFP12N18

    Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
    Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92CS-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20* RFP12N20 RFP12M20 RFP mosfets

    f12n10L

    Abstract: f12n10
    Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10