48409
Abstract: rfp70n03
Text: RFP70N03 £ ü H A R R IS S E M I C O N D U C T O R March 1994 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET Features • Package T 0 -2 2 0 A B 7 0 A .3 0 V TOP VIEW • *"d s <o n ) = 0 . 0 1 o n • U IS R a tin g C u rv e (S in g le P u lse )
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OCR Scan
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RFP70N03
TA49025)
10-3O
1o-30
23e-3
49o-7)
rev9/16/92
48409
rfp70n03
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10N40E
Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Text: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features
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OCR Scan
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M3D2271
00502L
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
HGTP10N40E1D,
HGTP10N50E1D
10N40E
10n40e1d
HGTP10N40C1D
HGTP10N50C1D
ls25 diode
diode OA-75
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2N5978
Abstract: No abstract text available
Text: b6E D HA RR IS S E M I C O N D SE CT OR 43 0 2 2 7 1 D D S Q S M b öbS I IHAS 2N6975, 2N6976 2N6977, 2N6978 fjl H A R R I S W • S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs December 1993 Features Package • 5A, 400V and 500V • JEDEC T0-204AA
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OCR Scan
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2N6975,
2N6976
2N6977,
2N6978
T0-204AA
2N6976,
2N6977
2N6978
AN72S4
2N5978
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EM- 546 motor
Abstract: G8P50G 2S2A
Text: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 5 0 0 V P - C h a n n e l I G B T s March 1997 Features Pa ckage JEDEC TO-251 AA • 8A, s o o v • 3.7V V CE SAT EMITTER COLLE CTO R GATE • T y p ic a l Fall T i m e - 1 8 0 0 n s • H ig h I n p u t I m p e d a n c e
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OCR Scan
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HGTD8P50G1,
HGTD8P50G1S
O-251
HGTD8P50G1
TD8P50G
1-800-4-H
EM- 546 motor
G8P50G
2S2A
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Untitled
Abstract: No abstract text available
Text: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns
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OCR Scan
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HGTG30N120D2
O-247
580ns
30N120D2*
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Untitled
Abstract: No abstract text available
Text: ¡2 htftiSSff HGTA32N60E2 32A, 600V N*Ch3nn6l IGBT December 1993 Features Package • 32 Am p, 600 Volt JEDEC M0-093AA 5LEAD TO-218 • Latch Free Operation • Typical Fall T im e 620ns 5 5 EMITTER > 4 EMITTER KELVIN 3 3 COLLECTOR > 2 NO CONNECTION > 1 GATE
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OCR Scan
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HGTA32N60E2
M0-093AA
O-218)
620ns
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IRFR9120
Abstract: p-channel pspice model IF9120 TA17501 123E5
Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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OCR Scan
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IRFR9120
IRFU9120
IRFR9120
1e-30
05e-6)
23o-3
23e-5)
05e-3
35e-5)
p-channel pspice model
IF9120
TA17501
123E5
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Untitled
Abstract: No abstract text available
Text: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package
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OCR Scan
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M3GE271
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
O-220AB
AN72S4
AN7260)
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