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    RF1S40N10SM9A Search Results

    RF1S40N10SM9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S40N10SM9A Fairchild Semiconductor 40 A, 100 V, 0.040 ohm, N-Channel Power MOSFET Original PDF
    RF1S40N10SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S40N10SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP40N10

    Abstract: No abstract text available
    Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 RFP40N10

    RFP40N10

    Abstract: F1S40N10 F1S40N AN9321 RF1S40N10 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334
    Text: RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 175oC RFP40N10 F1S40N10 F1S40N AN9321 RF1S40N10 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    F1S40N10

    Abstract: F1S40N RFP40N10 TA9846
    Text: RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM S E M I C O N D U C T O R 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 RF1S40N10SM F1S40N10 F1S40N RFP40N10 TA9846

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    RFP40N10

    Abstract: AN9321 AN9322 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334 F1S40N10
    Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 175oC RFP40N10 AN9321 AN9322 RF1S40N10SM RF1S40N10SM9A RFG40N10 TB334 F1S40N10

    F1S40N10

    Abstract: 40N10 TA9846 rfp40n10
    Text: HARRIS S E M I C O N D U C T O R RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 040i2 AN7254 AN7260. F1S40N10 40N10 TA9846 rfp40n10

    F1S40N10

    Abstract: RFP40N10
    Text: H A R R IS sem iconductor R F G 4 0 N 10, R F P 4 0 N 10, R F 1S 4 0 N 10, R F 1S 4 0 N 10S M 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


    OCR Scan     		PDF 040i2 AN7254 AN7260. RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM F1S40N10 RFP40N10

    40N10

    Abstract: RFP40N1Q F1S40N
    Text: RFG40N10, RFP40N10, RF1S40N10SM î n t e f s il D ata S h e e t J u ly 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 AN7260. 40N10 RFP40N1Q F1S40N