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    RF1K4915796 Price and Stock

    Rochester Electronics LLC RF1K4915796

    N-CHANNEL POWER MOSFET
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    onsemi RF1K4915796

    - Rail/Tube (Alt: RF1K4915796)
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    Avnet Americas RF1K4915796 Tube 4 Weeks 440
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    Fairchild Semiconductor Corporation RF1K4915796

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    Bristol Electronics RF1K4915796 1,796
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    Rochester Electronics RF1K4915796 25,000 1
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    Others RF1K4915796

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    Chip 1 Exchange RF1K4915796 3,315
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    RF1K4915796 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RF1K4915796 Fairchild Semiconductor 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET Original PDF
    RF1K4915796 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1K4915796 Datasheets Context Search

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    RF1K4915796

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K49157 TB334 0237E-9
    Text: RF1K49157 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF1K49157 RF1K4915796 AN7254 AN9321 AN9322 MS-012AA RF1K49157 TB334 0237E-9

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    RF1K4915796

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49157 211E-3 262E-9
    Text: RF1K49157 S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49157 RF1K49157 59e-4 87e-7) 08e-3 43e-3 57e-6) RF1K4915796 AN7254 AN7260 AN9321 AN9322 MS-012AA 211E-3 262E-9

    AN7254

    Abstract: AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334
    Text: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET File Number 4012.5 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF1K49157 AN7254 AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334

    Untitled

    Abstract: No abstract text available
    Text: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET 4012.5 Features • 6.3A, 30V Title This Single N-Channel power MOSFET is manufactured F1K4 using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF1K49157 TA49157. RF1K49157 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: in te la i I RF1K49157 Data Sheet A u g u st 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		PDF RF1K49157 TA49157. RF1K49157 AN7260.

    63a30

    Abstract: RF1K4915796
    Text: HH BF1K49157 H A R R IS S E M I C O N D U C T O R ^ Rated, Single N-Channel JXl&tëFÉt Enhancement Mode Power MOSFET 'no* ne V* January 1997 4- ¡V OÏ v ' Features Description • 6.3A.30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    OCR Scan     		PDF BF1K49157 RF1K49157 TA49157. MS-012AA RF1K49157 RF1K4915796. MS-012AA 63a30 RF1K4915796

    Untitled

    Abstract: No abstract text available
    Text: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    OCR Scan     		PDF RF1K49157 1e-30 59e-4 87e-7) 08e-3 43e-3 57e-6)