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Rochester Electronics LLC RF1K4915796 N-CHANNEL POWER MOSFET
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DigiKey	RF1K4915796	Bulk			365	1 - 10 - 100 - 1000 $0.82 10000 $0.82	Buy Now
Fairchild Semiconductor Corporation RF1K4915796
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Bristol Electronics	RF1K4915796		1,796			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	RF1K4915796		25,000		1	1 $0.7908 10 $0.7908 100 $0.7434 1000 $0.6722 10000 $0.6722	Buy Now
Harris Semiconductor RF1K4915796 Electronic Component
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ComSIT USA	RF1K4915796		1,803			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others RF1K4915796 INSTOCK
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Chip 1 Exchange	RF1K4915796		3,315			1 - 10 - 100 - 1000 - 10000 -	Get Quote

RF1K4915796 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RF1K4915796		Fairchild Semiconductor	6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET		Original	PDF
RF1K4915796		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

RF1K4915796 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RF1K4915796 Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K49157 TB334 0237E-9 Text: RF1K49157 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated	Original	RF1K49157 RF1K4915796 AN7254 AN9321 AN9322 MS-012AA RF1K49157 TB334 0237E-9	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
RF1K4915796 Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49157 211E-3 262E-9 Text: RF1K49157 S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This	Original	RF1K49157 RF1K49157 59e-4 87e-7) 08e-3 43e-3 57e-6) RF1K4915796 AN7254 AN7260 AN9321 AN9322 MS-012AA 211E-3 262E-9	PDF
AN7254 Abstract: AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334 Text: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET File Number 4012.5 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated	Original	RF1K49157 AN7254 AN9321 AN9322 MS-012AA RF1K49157 RF1K4915796 TB334	PDF
Untitled Abstract: No abstract text available Text: RF1K49157 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET 4012.5 Features • 6.3A, 30V Title This Single N-Channel power MOSFET is manufactured F1K4 using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated	Original	RF1K49157 TA49157. RF1K49157 MS-012AA	PDF
Untitled Abstract: No abstract text available Text: in te la i I RF1K49157 Data Sheet A u g u st 1999 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated	OCR Scan	RF1K49157 TA49157. RF1K49157 AN7260.	PDF
63a30 Abstract: RF1K4915796 Text: HH BF1K49157 H A R R IS S E M I C O N D U C T O R ^ Rated, Single N-Channel JXl&tëFÉt Enhancement Mode Power MOSFET 'no* ne V* January 1997 4- ¡V OÏ v ' Features Description • 6.3A.30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This	OCR Scan	BF1K49157 RF1K49157 TA49157. MS-012AA RF1K49157 RF1K4915796. MS-012AA 63a30 RF1K4915796	PDF
Untitled Abstract: No abstract text available Text: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This	OCR Scan	RF1K49157 1e-30 59e-4 87e-7) 08e-3 43e-3 57e-6)	PDF