TVU012
Abstract: 420 NPN Silicon RF Transistor ASI10646
Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.
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TVU012
TVU012
420 NPN Silicon RF Transistor
ASI10646
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TVU020
Abstract: RF Bipolar Transistor 2108-G ASI10648
Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband
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TVU020
TVU020
RF Bipolar Transistor
2108-G
ASI10648
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nte352
Abstract: w65 transistor
Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and
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NTE352
NTE352
136-175MHz
175MHz
175MHz,
w65 transistor
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SD1536-08
Abstract: TACAN
Text: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching
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SD1536-08
SD1536-08
TACAN
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TACAN transistor
Abstract: No abstract text available
Text: SD1520-02 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI SD1520-02 is Designed for IFF, DME and TACAN applications. A .1 0 0 x 4 5 ° FEATURES: C • Internal impedance matching • PG = 10 dB at 1.0 W/1150 MHz • Omnigold Metalization System
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SD1520-02
SD1520-02
TACAN transistor
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mda540
Abstract: BLV100
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum
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BLV100
OT171
mda540
BLV100
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AIRBORNE DME
Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
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HVV1012-550
1025MHz
1150MHz.
AIRBORNE DME
transistor SMD 12W MOSFET
transistor SMD 12W
smd transistor code 12w
RF Transistor S10-12
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433.92mhz receiver
Abstract: No abstract text available
Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the
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92MHz
D-81617
92MHz
433.92mhz receiver
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433.92mhz rf receiver
Abstract: 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER
Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the
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92MHz
92MHz
D-81617
433.92mhz rf receiver
433.92mhz
433.92mhz rf ic
uaa3201t
B3550
4339
smd transistor AE
ANTENNA-FILTER
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c55 siemens
Abstract: SIEMENS saw filter 433.92mhz rf receiver B3550 UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw
Text: Siemens Matsushita Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the
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92MHz
92MHz
B3550
c55 siemens
SIEMENS saw filter
433.92mhz rf receiver
UAA3201T
Siemens ofw
siemens matsua saw 45
siemens matsua saw
filter saw Siemens matsua
matsua saw
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TH720XX
Abstract: rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter" AN720xx-PA
Text: Application Note Transmitters TH720xx / Transceivers TH7122x PA Output Matching Almost all low-power RF transmitter ICs have an on-chip power amplifier stage where the output pin is either an open collector or open drain. The RF power amplifier stage of all Melexis transmitters is setup with a
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TH720xx
TH7122x
AN720xx-PA
March/06
ISO14001
rf power amplifier transistor with s-parameters
transistor RF S-parameters
TH720x
"Rf Transmitter"
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the
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HVV1011-600
1030MHz
1090MHz.
transistor SMD 12W MOSFET
transistor SMD 12W
transistor JE 1090
smd transistor code 12w
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BLV97CE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171
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BLV97CE
OT171
BLV97CE
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BLV98CE
Abstract: MDA459 MDA456
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171
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BLV98CE
OT-171
BLV98CE
MDA459
MDA456
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MRA359
Abstract: MDA536 BLV103 MRA364
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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BLV103
MRA359
MDA536
BLV103
MRA364
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transistor GaN
Abstract: No abstract text available
Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor Common-Source configuration No internal matching
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MAGX-000035-010000
MAGX-000035-01000S
MAGX-000035-01000X
transistor GaN
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AN721
Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
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AN721/D
AN721
AN721
EE3990
118-136 mhz
AN282A
Design of H. F. Wideband Power Transformers
2N6083
broadband impedance transformation
2N5642
shunt reactor
Motorola 2N6083
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2N6083
Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
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AN721/D
AN721
2N6083
AN721/D
Diode jx4
2N5642
AN721
MTT-19
Motorola 2N6083
motorola an721 application
2n6083 an721
AN282A
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shunt reactor
Abstract: 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A
Text: Freescale Semiconductor Application Note AN721 Rev. 1, 10/2005 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors By: B. Becciolini
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AN721
shunt reactor
2n6083 an721
AN721
AN7212
AN7218
Design of H. F. Wideband Power Transformers
2N5642
2N6083
AN267
AN282A
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Untitled
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve
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bbS3T31
BLV98CE
OT171
bb53T31
MCA924
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71009 SB
Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
Text: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an
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BLV98CE
OT-171
711002b
00b3QÃ
71009 SB
transistor tt 2222
BLV98CE
transistor C9
NPN power Transistor 10A 24V
transistor zx series
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ceramic capacitor 470 pf
Abstract: philips carbon film resistor philips transistor sot122 MCB117
Text: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12
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BLU15/12
OT122
OT122A
MCBT16
ceramic capacitor 470 pf
philips carbon film resistor
philips transistor
sot122
MCB117
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SOT423
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION
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BLS2731
OT423A
SOT423
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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TIC 122 Transistor
Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy
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BLS3135-10
OT445C
TIC 122 Transistor
RF NPN POWER TRANSISTOR 3 GHZ
TRANSISTOR C 557 B
RF NPN POWER TRANSISTOR C 10-12 GHZ
BLS3135-10
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