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    RF TRANSISTOR IMPEDANCE MATCHING Search Results

    RF TRANSISTOR IMPEDANCE MATCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR IMPEDANCE MATCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TVU012

    Abstract: 420 NPN Silicon RF Transistor ASI10646
    Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.


    Original     		PDF TVU012 TVU012 420 NPN Silicon RF Transistor ASI10646

    TVU020

    Abstract: RF Bipolar Transistor 2108-G ASI10648
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband


    Original     		PDF TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648

    nte352

    Abstract: w65 transistor
    Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and


    Original     		PDF NTE352 NTE352 136-175MHz 175MHz 175MHz, w65 transistor

    SD1536-08

    Abstract: TACAN
    Text: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching


    Original     		PDF SD1536-08 SD1536-08 TACAN

    TACAN transistor

    Abstract: No abstract text available
    Text: SD1520-02 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI SD1520-02 is Designed for IFF, DME and TACAN applications. A .1 0 0 x 4 5 ° FEATURES: C • Internal impedance matching • PG = 10 dB at 1.0 W/1150 MHz • Omnigold Metalization System


    Original     		PDF SD1520-02 SD1520-02 TACAN transistor

    mda540

    Abstract: BLV100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


    Original     		PDF BLV100 OT171 mda540 BLV100

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12

    433.92mhz receiver

    Abstract: No abstract text available
    Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the


    Original     		PDF 92MHz D-81617 92MHz 433.92mhz receiver

    433.92mhz rf receiver

    Abstract: 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER
    Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the


    Original     		PDF 92MHz 92MHz D-81617 433.92mhz rf receiver 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER

    c55 siemens

    Abstract: SIEMENS saw filter 433.92mhz rf receiver B3550 UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw
    Text: Siemens Matsushita Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the


    Original     		PDF 92MHz 92MHz B3550 c55 siemens SIEMENS saw filter 433.92mhz rf receiver UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw

    TH720XX

    Abstract: rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter" AN720xx-PA
    Text: Application Note Transmitters TH720xx / Transceivers TH7122x PA Output Matching Almost all low-power RF transmitter ICs have an on-chip power amplifier stage where the output pin is either an open collector or open drain. The RF power amplifier stage of all Melexis transmitters is setup with a


    Original     		PDF TH720xx TH7122x AN720xx-PA March/06 ISO14001 rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter"

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


    Original     		PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		PDF BLV97CE OT171 BLV97CE

    BLV98CE

    Abstract: MDA459 MDA456
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171


    Original     		PDF BLV98CE OT-171 BLV98CE MDA459 MDA456

    MRA359

    Abstract: MDA536 BLV103 MRA364
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


    Original     		PDF BLV103 MRA359 MDA536 BLV103 MRA364

    transistor GaN

    Abstract: No abstract text available
    Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching


    Original     		PDF MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN

    AN721

    Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


    Original     		PDF AN721/D AN721 AN721 EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083

    2N6083

    Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


    Original     		PDF AN721/D AN721 2N6083 AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A

    shunt reactor

    Abstract: 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A
    Text: Freescale Semiconductor Application Note AN721 Rev. 1, 10/2005 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors By: B. Becciolini


    Original     		PDF AN721 shunt reactor 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A

    Untitled

    Abstract: No abstract text available
    Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve


    OCR Scan     		PDF bbS3T31 BLV98CE OT171 bb53T31 MCA924

    71009 SB

    Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
    Text: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an


    OCR Scan     		PDF BLV98CE OT-171 711002b 00b3QÃ 71009 SB transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series

    ceramic capacitor 470 pf

    Abstract: philips carbon film resistor philips transistor sot122 MCB117
    Text: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12


    OCR Scan     		PDF BLU15/12 OT122 OT122A MCBT16 ceramic capacitor 470 pf philips carbon film resistor philips transistor sot122 MCB117

    SOT423

    Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION


    OCR Scan     		PDF BLS2731 OT423A SOT423 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    TIC 122 Transistor

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
    Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy


    OCR Scan     		PDF BLS3135-10 OT445C TIC 122 Transistor RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10