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    ASI10648 Search Results

    ASI10648 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ASI10648 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10648 Datasheets Context Search

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    ASI10648

    Abstract: TVU020
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for PACKAGE STYLE .400 BAL FLG A FEATURES: A B FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K MAXIMUM RATINGS 11.0 A VCBO 60 V


    Original     		PDF TVU020 TVU020 ASI10648 ASI10648

    TVU020

    Abstract: RF Bipolar Transistor 2108-G ASI10648
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband


    Original     		PDF TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648

    ASI10648

    Abstract: TVU020
    Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Common Emitter • PG = 8.5 dB at 20 W/860 MHz • Omnigold Metalization System


    Original     		PDF TVU020 TVU020 ASI10648