RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 1030 MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MDS400 Abstract: No abstract text available Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold	Original	PDF	MDS400 MDS400
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10250HS MRF6V10250HSR3
TRANSISTOR 618 Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration	Original	PDF	MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
1030-1090MHz Abstract: 4884 SM200 DS01A Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	PDF	HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A
ASI10573 Abstract: AVF350 Text: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks	Original	PDF	AVF350 AVF350 ASI10573 ASI10573
AVF450 Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166 Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:	Original	PDF	AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
1090mhz signal Abstract: ILD1011 ILD1011M400 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer Text: Part Number: Integra ILD1011M400 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	PDF	ILD1011M400 ILD1011M400 ILD1011M400-REV-PR4-DS-REVPR4 1090mhz signal ILD1011 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer
ROGERS DUROID Abstract: No abstract text available Text: BLA6G1011-200R Power LDMOS transistor Rev. 3 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.	Original	PDF	BLA6G1011-200R ROGERS DUROID
200WN Abstract: No abstract text available Text: BLA6G1011-200R Power LDMOS transistor Rev. 01 — 17 June 2009 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.	Original	PDF	BLA6G1011-200R BLA6G1011-200R 200WN
nxp TRANSISTOR SMD 13 Abstract: No abstract text available Text: BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.	Original	PDF	BLA6G1011-200R BLA6G1011-200R nxp TRANSISTOR SMD 13
Untitled Abstract: No abstract text available Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V3 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration	Original	PDF	MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
transistor ballast 1000W Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor Text: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation	Original	PDF	MAPRST1030-1KS transistor ballast 1000W transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor
transistor 1000W Abstract: 1030 Text: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PDF	MAPRST1030-1KS transistor 1000W 1030
Untitled Abstract: No abstract text available Text: PH1090-15L Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PDF	PH1090-15L

702 TRANSISTOR smd Abstract: BLA6H1011-600 200B 800B Text: BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information	Original	PDF	BLA6H1011-600 BLA6H1011-600 702 TRANSISTOR smd 200B 800B
mode 5 IFF Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1011-300 429-HVVi EG-01-DS02A EG-01-DS02A5 mode 5 IFF diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
J122 SMD TRANSISTOR Abstract: 800B MHz-2 BLA6H0912-500 Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.	Original	PDF	BLA6H0912-500 BLA6H0912-500 J122 SMD TRANSISTOR 800B MHz-2
Untitled Abstract: No abstract text available Text: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is	Original	PDF	1011GN-700ELM 1011GN-700ELM 55-KR 55-KR
Untitled Abstract: No abstract text available Text: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power	Original	PDF	1011GN-700ELM 55-KR 1011GN-700ELM
SMD 0508 Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:	Original	PDF	BLA1011-200; BLA1011S-200 SMD 0508 BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
BLA1011-300 Abstract: sot957 SOT-95 Text: BLA1011-300 Avionics LDMOS transistors Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance	Original	PDF	BLA1011-300 BLA1011-300 sot957 SOT-95
RO6006 Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with	Original	PDF	PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST
Transistor J182 Abstract: j182 j182 transistor J221 j161 j182 ic SN723 MDS500L J160 J1 TRANSISTOR Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance.	Original	PDF	MDS500L MDS500L Transistor J182 j182 j182 transistor J221 j161 j182 ic SN723 J160 J1 TRANSISTOR
acrian RF POWER TRANSISTOR Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664 Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ \|j \|!\|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to	OCR Scan	PDF	TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664

RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

RF TRANSISTOR 1030 MHZ Datasheets Context Search

MDS400

Untitled

TRANSISTOR 618

1030-1090MHz

ASI10573

AVF450

1090mhz signal

ROGERS DUROID

200WN

nxp TRANSISTOR SMD 13

Untitled

transistor ballast 1000W

transistor 1000W

Untitled

702 TRANSISTOR smd

mode 5 IFF

J122 SMD TRANSISTOR

Untitled

Untitled

SMD 0508

BLA1011-300

RO6006

Transistor J182

acrian RF POWER TRANSISTOR