RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR 1030 MHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MDS400 Abstract: No abstract text available Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold	Original	MDS400 MDS400	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3	PDF
ATC100B3R3 Abstract: No abstract text available Text: Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 LIFETIME BUY RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 MRF6V10250HS ATC100B3R3	PDF
ATC100B4R7CT500XT Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955	PDF
TRANSISTOR 618 Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration	Original	MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS	PDF
HVV1011-600 Abstract: hvvi 1090MHZ Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor	Original	HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ	PDF
acrian RF POWER TRANSISTOR Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664 Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ \|j \|!\|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to	OCR Scan	TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664	PDF
1090 Abstract: TPR175 transistor 388 DSA0039087 common base transistor Text: TPR175 NPN SILICON RF-MICROWAVE POWER TRANSISTOR PACKAGE STYLE DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. FEATURES: • Common Base • Internal Matching Network • PG = 8.0 dB at 175 W/1090 MHz	Original	TPR175 TPR175 1090 transistor 388 DSA0039087 common base transistor	PDF
HV1011-1000L Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness	Original	HV1011-1000L 1090MHz.	PDF
1030-1090MHz Abstract: 4884 SM200 DS01A Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A	PDF
Untitled Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage	Original	HVV1011-035 SM200	PDF
transistor c 3274 Abstract: 1030 mhz 1030-1090MHz STAP1011-180 Text: STAP1011-180 RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% ■ Plastic package	Original	STAP1011-180 2002/95/EC STAP1011-180 PowerSO-10RF transistor c 3274 1030 mhz 1030-1090MHz	PDF
ASI10573 Abstract: AVF350 Text: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks	Original	AVF350 AVF350 ASI10573 ASI10573	PDF
TRANSISTOR HBA Abstract: 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090 ATC100A PH1090-350L Text: PH1090-350L M/A-OOM Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250\|is Pulse, 10% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics	OCR Scan	PH1090-350L PH1090-350L 250ns TT47M63A ATC100A TRANSISTOR HBA 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090	PDF

AVF450 Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166 Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:	Original	AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166	PDF
Untitled Abstract: No abstract text available Text: Part Number: ILD1011M450HV Preliminary Integra TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M450HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M450HV ILD1011M450HV ILD1011M450HV-REV-PR1-DS-REV-A	PDF
ILD1011M160HV Abstract: No abstract text available Text: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B	PDF
L1128 Abstract: L038 1030-1090MHz Text: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■	Original	STAC1011-350 STAC1011-350 STAC265B L1128 L038 1030-1090MHz	PDF
1090mhz Abstract: JESD22-A114 PRA1000 Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit	Original	960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114	PDF
transistor 1047 Abstract: transistor 931 transistor 1047 voltage rating 1090 ATC100A PH1090-550S transistor 1207 l0111 Text: PH1090-550S M/A-OOM Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M /A -C O M ’ s P H 1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment	OCR Scan	PH1090-550S PH1090-550S 10jaS) ATC100A transistor 1047 transistor 931 transistor 1047 voltage rating 1090 transistor 1207 l0111	PDF
ILD1011M250 Abstract: ild10 Text: Part Number: Integra ILD1011M250 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M250 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M250 ILD1011M250 ILD1011M250-REV-NC-DS-REV-A ild10	PDF
Integra Technologies Abstract: No abstract text available Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M15HV ILD1011M15HV ILD1011M15HV-REV-NC-DS-REV-E Integra Technologies	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M400 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M400 ILD1011M400 ILD1011M400-REV-NC-DS-REV-I	PDF

RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

RF TRANSISTOR 1030 MHZ Datasheets Context Search

MDS400

Untitled

ATC100B3R3

ATC100B4R7CT500XT

TRANSISTOR 618

HVV1011-600

acrian RF POWER TRANSISTOR

1090

HV1011-1000L

1030-1090MHz

Untitled

transistor c 3274

ASI10573

TRANSISTOR HBA

AVF450

Untitled

ILD1011M160HV

Untitled

L1128

1090mhz

transistor 1047

ILD1011M250

Integra Technologies

Untitled