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    RF POWER TRANSISTOR MOSFET Search Results

    RF POWER TRANSISTOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF278C Rochester Electronics VHF power MOS transistor Visit Rochester Electronics Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TM-100 Rochester Electronics LLC TM-100/CLF1G0035S-100 - 100W Broadband RF Power RF Mosfet Gan HEMT Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H160--4S4 AFT26H160-4S4R3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		PDF MRF9030N MRF9030NBR1 MRF9030N

    balun transformer 75 ohm

    Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
    Text: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS


    Original     		PDF UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH

    RFM08U9X

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X RFM08U9X

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


    Original     		PDF UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer

    DU2820S

    Abstract: fl capacitor 1000 K 739 mosfet
    Text: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C


    Original     		PDF DU2820S DlJ2820S DU2820S fl capacitor 1000 K 739 mosfet

    ISS270

    Abstract: 1S22 DU2812OV I522 Transistor Equivalent list
    Text: RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz DU2812OV Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . Absolute Maximum Ratings at 25°C


    Original     		PDF DU2812OV ISS270 1S22 DU2812OV I522 Transistor Equivalent list

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    S2185

    Abstract: PD55015-E trimmer 3-30 pf
    Text: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead


    Original     		PDF PD55015-E Hz/12 PowerSO-10RF PD55015-E PowerSO-10RF. S2185 trimmer 3-30 pf

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


    Original     		PDF UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43

    AGRB10XM

    Abstract: JESD22-C101A DSA00206784.txt
    Text: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.


    Original     		PDF AGRB10XM AGRB10 DS04-140RFPP PB04-052RFPP) AGRB10XM JESD22-C101A DSA00206784.txt

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19045 RDMRF19045NCDMA5

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125 RDMRF21125WCDMA

    rf mosfet ericsson

    Abstract: No abstract text available
    Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts power output. Nitride surface passivation


    Original     		PDF 1-877-GOLDMOS 1301-PTF rf mosfet ericsson

    power amplifier mosfet up to 50mhz

    Abstract: APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448
    Text: APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF ARF448A/B 50MHz. 100MHz. power amplifier mosfet up to 50mhz APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448

    sd2942

    Abstract: SD2942w SD2942 equivalent RG316-25 POWER500 marking 16
    Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS


    Original     		PDF SD2942 SD2942 SD2932. SD2942W SD2942w SD2942 equivalent RG316-25 POWER500 marking 16

    1000 watt mosfet power amplifier

    Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
    Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for


    Original     		PDF SLD-1000 SLD-1000 2700MHz. EDS-104291 AN-039 1000 watt mosfet power amplifier MOSFET 20 NE 50 Z 80021 SLD-1083CZ 1000 watts amplifier schematic diagram with part

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    SLD-2083CZ

    Abstract: JESD22-A119 mosfet reliability testing report JESD22-A103 laser diode lifetime JESD22-A104B JESD22-A108B JESD22-A114 JESD22-B103 SLD-1083CZ
    Text: Reliability Qualification Report SLD-2083CZ – RoHS compliant Products to be Qualified by Similarity SLD-1083CZ Initial Qualification 2005 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


    Original     		PDF SLD-2083CZ SLD-1083CZ RQR-104281 SLD-2083CZ JESD22-A119 mosfet reliability testing report JESD22-A103 laser diode lifetime JESD22-A104B JESD22-A108B JESD22-A114 JESD22-B103 SLD-1083CZ

    Untitled

    Abstract: No abstract text available
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542A − OCTOBER 2003 − REVISED JULY 2004 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION The UCC2891/2/3/4 family of PWM controllers is designed to simplify implementation of the various


    Original     		PDF UCC2891, UCC2892 UCC2893, UCC2894 SLUS542A UCC2891/3 UCC2891/2/3/4

    Untitled

    Abstract: No abstract text available
    Text: Skip to content | | | Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products


    Original     		PDF 500Hz