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    UF281 Search Results

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    UF281 Price and Stock

    MACOM UF2815B

    RF MOSFET 28V 6L-FLG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UF2815B Bulk 25
    • 1 -
    • 10 -
    • 100 $84.4976
    • 1000 $84.4976
    • 10000 $84.4976
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    Mouser Electronics UF2815B
    • 1 -
    • 10 -
    • 100 $94.47
    • 1000 $94.47
    • 10000 $94.47
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    Richardson RFPD UF2815B 40
    • 1 -
    • 10 -
    • 100 $80.83
    • 1000 $80.83
    • 10000 $80.83
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    MACOM UF28150J

    RF MOSFET 28V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UF28150J Tray 10
    • 1 -
    • 10 $442.217
    • 100 $442.217
    • 1000 $442.217
    • 10000 $442.217
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    Mouser Electronics UF28150J 24
    • 1 $458.02
    • 10 $436.24
    • 100 $436.24
    • 1000 $436.24
    • 10000 $436.24
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    Richardson RFPD UF28150J 1
    • 1 $470.42
    • 10 $470.42
    • 100 $470.42
    • 1000 $470.42
    • 10000 $470.42
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    MACOM UF28100V

    RF MOSFET N-CHANNEL 28V 8L-FLG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UF28100V Bulk 25
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    • 100 $260.6136
    • 1000 $260.6136
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    Mouser Electronics UF28100V 20
    • 1 $278.24
    • 10 $255.15
    • 100 $255.14
    • 1000 $255.14
    • 10000 $255.14
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    Richardson RFPD UF28100V 20
    • 1 -
    • 10 -
    • 100 $256.09
    • 1000 $256.09
    • 10000 $256.09
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    MACOM UF28100H

    RF MOSFET 28V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UF28100H Tray
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    MACOM UF28100M

    RF MOSFET N-CHANNEL 28V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UF28100M Bulk 10
    • 1 -
    • 10 $336.669
    • 100 $336.669
    • 1000 $336.669
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    Mouser Electronics UF28100M
    • 1 -
    • 10 $327.75
    • 100 $323.83
    • 1000 $323.83
    • 10000 $323.83
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    Richardson RFPD UF28100M 24 10
    • 1 -
    • 10 $294.12
    • 100 $294.12
    • 1000 $294.12
    • 10000 $294.12
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    Chip1Stop UF28100M 24
    • 1 $344
    • 10 $340
    • 100 $340
    • 1000 $340
    • 10000 $340
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    UF281 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UF28100 Tyco Electronics RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz Original PDF
    UF28100H M/A-COM FET, Enhancement, N Channel, 2 VThreshold, ID 12 A Original PDF
    UF28100M M/A-COM RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz Original PDF
    UF28100V Tyco Electronics RF MOSFET Power Transistor Original PDF
    UF2810P Tyco Electronics 100-500 MHz, 10 W, 28 V, RF MOSFET power transistor Original PDF
    UF28150 Tyco Electronics POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V Original PDF
    UF28150J Tyco Electronics POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V Original PDF
    UF28156 Tyco Electronics RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz Original PDF
    UF2815B M/A-COM MOSFET, Enhancement Mode, N Channel, -Pin Original PDF
    UF2815OJ M/A-COM RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz Original PDF
    UF281OOH Tyco Electronics RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz Original PDF
    UF281OOM Tyco Electronics RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz Original PDF
    UF281OOV Tyco Electronics RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz Original PDF
    UF281OP Tyco Electronics RF MOSFET Power Transistor, IOW, 28V 100 - 500 MHz Original PDF

    UF281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UF2815OJ

    Abstract: No abstract text available
    Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C


    Original
    PDF UF2815OJ -65to UF2815OJ

    F-627-8-Q1

    Abstract: F6278-Q1
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


    Original
    PDF UF28150J 100MHz-500MHz, F-627-8-Q1 F6278-Q1

    UF2815B

    Abstract: k 815 MOSFET
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original
    PDF UF2815B UF2815B k 815 MOSFET

    UF28100V

    Abstract: UF28100 mosfet popwer
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original
    PDF UF28100V UF28100V UF28100 mosfet popwer

    balun transformer 75 ohm

    Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
    Text: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS


    Original
    PDF UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


    Original
    PDF UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


    Original
    PDF UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43

    UF28156

    Abstract: UF2815B L5 mosfet
    Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation


    Original
    PDF UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet

    Untitled

    Abstract: No abstract text available
    Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original
    PDF UF2815B

    F627-8Q1

    Abstract: F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


    Original
    PDF UF28150J 100MHz-500MHz, F627-8Q1 F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8

    UF28100M

    Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C


    Original
    PDF UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E

    Untitled

    Abstract: No abstract text available
    Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices


    Original
    PDF UF28100V 25-j1

    UF28100H

    Abstract: No abstract text available
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original
    PDF UF28100H 25-j1 UF28100H

    J50 mosfet

    Abstract: UF2810P 700J1
    Text: UF2810P RF Power MOSFET Transistor 10W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original
    PDF UF2810P J50 mosfet UF2810P 700J1

    UF28100H

    Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w
    Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original
    PDF UF28100H UF28100H 75J10 power supply 100w UF28100 transistor 200mhz 100w

    UF28100M

    Abstract: UF28100 transistor 200mhz 100w
    Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original
    PDF UF28100M UF28100M UF28100 transistor 200mhz 100w

    transistor f 948

    Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
    Text: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching


    Original
    PDF UF28150J transistor f 948 transistor 936 j78 transistor J31 transistor GP 948 UF2815OJ DS-175 pd233

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original
    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    capacitor 60uF

    Abstract: 260pf capacitor uf28100v UF28100 ER 35 e transformer
    Text: A f a COM W an A M P c o m p a n y RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100V V2.00 Features triT • N -Channel E n h an cem en t M ode D evice • DM OS Structure • Low er C ap acitan ces for B roadb an d O p era tio n • High Saturated O u tp u t Pow er


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    PDF UF28100V Uf28100V capacitor 60uF 260pf capacitor UF28100 ER 35 e transformer

    Untitled

    Abstract: No abstract text available
    Text: M fa œ m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J V2.00 Features r*|T • N -Channel E n han cem en t M ode D evice • DM OS Structure • I,ow er C ap acitan ces for B roadban d O p eratio n • C o m m o n S ou rce C on figuration


    OCR Scan
    PDF UF28150J

    balun transformer 75 ohm

    Abstract: 300 ohms balun
    Text: Ajfomm m an A M P com pany RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100H V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration High Saturated O utput Power Lower Noise Figure Than Competitive Devices


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    PDF UF28100H UF201OOH 0311THICK balun transformer 75 ohm 300 ohms balun

    Untitled

    Abstract: No abstract text available
    Text: A m ßan A McP com c pany m RF MOSFET Power Transistor, 10W, 28V 100-500 MHz UF2810P V2.00 Features • N-Channel Enhancement Mode Device • DMOS Structure • • • • l.ower Capacitances for Broadband Operation Common Source Configuration I.ower Noise Floor


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    PDF UF2810P UF8610P

    cis 280v

    Abstract: No abstract text available
    Text: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz UF2815B Features • • • • • • N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration


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    PDF UF2815B UF2815B 50OHM cis 280v

    25 ohm semirigid

    Abstract: No abstract text available
    Text: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er


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    PDF UF28100M 303BRANSFORMER. UF201OOM 25 ohm semirigid