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    RF MOSFET ERICSSON Search Results

    RF MOSFET ERICSSON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RF MOSFET ERICSSON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1301P

    Abstract: K1206 ldmos
    Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output


    OCR Scan     		PDF K1206 G-200, -877-GOLD 1301-PTE 1301P ldmos

    k1206

    Abstract: Ericsson B
    Text: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    OCR Scan     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF10112 k1206 Ericsson B

    data transistor 1650

    Abstract: 1650 LD 10045 pte10045
    Text: ERICSSON ^ PTE 10045* 30 Watts, 1.60-1.65 GHz LDMOS Field Effect Transistor Description The 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 w a tts m inim um o u tp u t power. N itride surface


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    ericsson 10007

    Abstract: s 10007
    Text: ERICSSON í PTF 10007 35 Watts, HF -1.0 GHz LDMOS Field Effect T ra n s is to r Description The PTF 10007 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GFIz. It is rated at 35 watts minimum output power. Nitride surface


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    10019

    Abstract: P4917-ND
    Text: ERICSSON ^ PTE 10019* 70 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10019 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for cellular, GSM, and DAMP applications in the 860 to 960 MHz range. It is rated at 70 watts


    OCR Scan     		PDF P5276 P4917-ND 20AWG, 10019

    transistor number D 2498

    Abstract: No abstract text available
    Text: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum


    OCR Scan     		PDF Rating10 K1206 K1206 G-200, 1-877-GOLDMOS 1301-PTE10122 transistor number D 2498

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10041* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum


    OCR Scan     		PDF P4917-N P5276

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
    Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface


    OCR Scan     		PDF 20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10107* 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10107 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2,0 GHz. It is rated at 5 watts minimum output power. Ion implantation, nitride


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface


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    k1206 220 r3

    Abstract: No abstract text available
    Text: ERICSSON PTE 10048* 30 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10048 is an internally matched common source N-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 2.1 to 2.2 GHz. It is rated at 30 watts power output.


    OCR Scan     		PDF K1206 K1206 1-877-GOLDMOS 1301-PTE k1206 220 r3

    ericsson 10007

    Abstract: c 2575 gs
    Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface


    OCR Scan     		PDF ate-Sou05 ericsson 10007 c 2575 gs

    IDG200

    Abstract: No abstract text available
    Text: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum


    OCR Scan     		PDF P4917-ND P5276 5801-PC IDG200

    ERICSSON 10031

    Abstract: PTF 10031 ericsson b
    Text: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P4917-ND P5276 ERICSSON 10031 PTF 10031 ericsson b

    ic 151 811

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10053* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10053 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride


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    JX - 638

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10041 * 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride


    OCR Scan     		PDF De010 JX - 638

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage


    OCR Scan     		PDF P4917-ND P5276 20AWG,

    transistor d 1557

    Abstract: No abstract text available
    Text: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica­ tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30


    OCR Scan     		PDF G-200, transistor d 1557

    transistor 21789

    Abstract: 0965 TRANSISTOR ATC 1595
    Text: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10015* 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10015 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1 0 GHz. It is rated at 45 watts minimum output power. Nitride surface


    OCR Scan     		PDF P4917-ND P5276 20AWG,

    transistor 0882

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10111* 6 Watts, to 1.5 GHz LDMOS Field Effect Transistor Description The 10111 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1,5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P5276 G-200 transistor 0882

    resistor 177 178 179

    Abstract: No abstract text available
    Text: ERICSSON ^ PTF 10100 165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output.


    OCR Scan     		PDF 1-877-GOLDMOS EUS/KR1301 resistor 177 178 179