1301P
Abstract: K1206 ldmos
Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output
|
OCR Scan
|
K1206
G-200,
-877-GOLD
1301-PTE
1301P
ldmos
|
PDF
|
k1206
Abstract: Ericsson B
Text: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
|
OCR Scan
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF10112
k1206
Ericsson B
|
PDF
|
data transistor 1650
Abstract: 1650 LD 10045 pte10045
Text: ERICSSON ^ PTE 10045* 30 Watts, 1.60-1.65 GHz LDMOS Field Effect Transistor Description The 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 w a tts m inim um o u tp u t power. N itride surface
|
OCR Scan
|
|
PDF
|
ericsson 10007
Abstract: s 10007
Text: ERICSSON í PTF 10007 35 Watts, HF -1.0 GHz LDMOS Field Effect T ra n s is to r Description The PTF 10007 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GFIz. It is rated at 35 watts minimum output power. Nitride surface
|
OCR Scan
|
|
PDF
|
10019
Abstract: P4917-ND
Text: ERICSSON ^ PTE 10019* 70 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10019 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for cellular, GSM, and DAMP applications in the 860 to 960 MHz range. It is rated at 70 watts
|
OCR Scan
|
P5276
P4917-ND
20AWG,
10019
|
PDF
|
transistor number D 2498
Abstract: No abstract text available
Text: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum
|
OCR Scan
|
Rating10
K1206
K1206
G-200,
1-877-GOLDMOS
1301-PTE10122
transistor number D 2498
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10041* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum
|
OCR Scan
|
P4917-N
P5276
|
PDF
|
transistor c1213
Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface
|
OCR Scan
|
20AWG,
transistor c1213
c1213 transistor
CHARACTERISTIC OF TRANSISTOR C1213
transistor Rf C1213
C1213
jmc 5701
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10107* 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10107 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2,0 GHz. It is rated at 5 watts minimum output power. Ion implantation, nitride
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface
|
OCR Scan
|
|
PDF
|
k1206 220 r3
Abstract: No abstract text available
Text: ERICSSON PTE 10048* 30 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10048 is an internally matched common source N-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 2.1 to 2.2 GHz. It is rated at 30 watts power output.
|
OCR Scan
|
K1206
K1206
1-877-GOLDMOS
1301-PTE
k1206 220 r3
|
PDF
|
ericsson 10007
Abstract: c 2575 gs
Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface
|
OCR Scan
|
ate-Sou05
ericsson 10007
c 2575 gs
|
PDF
|
|
|
IDG200
Abstract: No abstract text available
Text: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum
|
OCR Scan
|
P4917-ND
P5276
5801-PC
IDG200
|
PDF
|
ERICSSON 10031
Abstract: PTF 10031 ericsson b
Text: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
P4917-ND
P5276
ERICSSON 10031
PTF 10031
ericsson b
|
PDF
|
ic 151 811
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10053* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10053 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride
|
OCR Scan
|
|
PDF
|
JX - 638
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10041 * 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride
|
OCR Scan
|
De010
JX - 638
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage
|
OCR Scan
|
P4917-ND
P5276
20AWG,
|
PDF
|
transistor d 1557
Abstract: No abstract text available
Text: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30
|
OCR Scan
|
G-200,
transistor d 1557
|
PDF
|
transistor 21789
Abstract: 0965 TRANSISTOR ATC 1595
Text: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10015* 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10015 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1 0 GHz. It is rated at 45 watts minimum output power. Nitride surface
|
OCR Scan
|
P4917-ND
P5276
20AWG,
|
PDF
|
transistor 0882
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10111* 6 Watts, to 1.5 GHz LDMOS Field Effect Transistor Description The 10111 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1,5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
P5276
G-200
transistor 0882
|
PDF
|
resistor 177 178 179
Abstract: No abstract text available
Text: ERICSSON ^ PTF 10100 165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output.
|
OCR Scan
|
1-877-GOLDMOS
EUS/KR1301
resistor 177 178 179
|
PDF
|
