Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF FET CROSS REFERENCE Search Results

    RF FET CROSS REFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF FET CROSS REFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.


    Original     		PDF BB305C REJ03G0828-0600 ADE-208-608D) OT-343mod) PTSP0004ZA-A BB305C

    BB305CEW

    Abstract: 1SV70 BB305C
    Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.


    Original     		PDF BB305C REJ03G0828-0600 ADE-208-608D) OT-343mod) PTSP0004ZA-A BB305C BB305CEW 1SV70

    Untitled

    Abstract: No abstract text available
    Text: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.


    Original     		PDF BB305M REJ03G0829-0600 ADE-208-607D) 200pF, OT-143Rmod) PLSP0004ZA-A BB305M

    1SV70

    Abstract: BB305M
    Text: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.


    Original     		PDF BB305M REJ03G0829-0600 ADE-208-607D) 200pF, OT-143Rmod) PLSP0004ZA-A BB305M 1SV70

    3SK319

    Abstract: ADE-208-602 DSA003643
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 ADE-208-602 DSA003643

    3SK318

    Abstract: DSA003643
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 3SK318 DSA003643

    3SK318

    Abstract: 3SK318YB-TL-E 3SK318YB-TL
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 REJ03G0819-0200 ADE-208-600) PTSP0004ZA-A 3SK318 3SK318YB-TL-E 3SK318YB-TL

    ADE-208-602

    Abstract: 3SK319 3SK319YB-TL-E
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 REJ03G0820-0200 ADE-208-602) PLSP0004ZA-A ADE-208-602 3SK319 3SK319YB-TL-E

    Untitled

    Abstract: No abstract text available
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 REJ03G0820-0200 ADE-208-602) PLSP0004ZA-A

    1SV70

    Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
    Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB305C ADE-208-608D OT-343mod) BB305C 1SV70 Hitachi integrated circuit 1115 DSA003643

    TM 1628 Datasheet

    Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
    Text: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB305M ADE-208-607D 200pF, OT-143Rmod) BB305M TM 1628 Datasheet 607D 1SV70 Hitachi integrated circuit 1115 DSA003643

    Hitachi DSA0076

    Abstract: 1SV70 BB405M
    Text: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB405M ADE-208-718B 200pF, OT-143 BB405M Hitachi DSA0076 1SV70

    Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets

    Abstract: No abstract text available
    Text: Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets Mike Sun and Pete Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end


    Original     		PDF

    sfp450h

    Abstract: rf voltmeter circuit diagrams SFP-450H BFU450CN la1135 YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf
    Text: Ordering number: EN1272E Monolithic Linear IC LA1135, 1135M AM Tuner System for Car Radios and Home Stereos Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna:


    Original     		PDF EN1272E LA1135, 1135M LA1135 3021B-DIP20S LA1135] DIP20S 3036B-MFP20 sfp450h rf voltmeter circuit diagrams SFP-450H BFU450CN YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf

    LA1170

    Abstract: 47K-074-124 3SK181 LA1175 LA1175M 967m IC LA1175 sumida ift coil YT-20577
    Text: Ordering number : EN2276B Monolithic Linear IC LA1175, 1175M FM Front End For Car Radio, Home Stereo Applications Functions Package Dimensions • Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, unit: mm differential IF amplifier, buffer amplifier for oscillation,


    Original     		PDF EN2276B LA1175, 1175M 020A-SIP16 LA1175] LA1170 47K-074-124 3SK181 LA1175 LA1175M 967m IC LA1175 sumida ift coil YT-20577

    IC 4047

    Abstract: GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet
    Text: PRODUCT FEATURE RF DIGITAL ATTENUATORS IN PLASTIC MLP PACKAGES B Fig. 1 Relative sizes of the five-bit and six-bit attenuators. ▼ roadband digital attenuators have been used to set power levels in RF and microwave circuits for many years. The concept is to electronically switch resistive T


    Original     		PDF AT90XXXX) AT90XXXX-TB) AT90-0001 IC 4047 GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet

    la1135

    Abstract: transistor 2sc930 2sc536 sfp450h 2SC536 transistor toko 10k coils 2SC930 equivalent fm tuner mitsumi 6pin Mitsumi de RF SVC321
    Text: Ordering number : EN1272G LA1135 LA1135M Monolithic Linear IC For Car Radios and Home Stereos AM Tuner System Overview The LA1135 and LA1135M are high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna : loop applications.


    Original     		PDF EN1272G LA1135 LA1135M LA1135 LA1135M transistor 2sc930 2sc536 sfp450h 2SC536 transistor toko 10k coils 2SC930 equivalent fm tuner mitsumi 6pin Mitsumi de RF SVC321

    HMF06100

    Abstract: "Harris microwave"
    Text: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability


    OCR Scan     		PDF

    HMF-06100

    Abstract: HMF06100
    Text: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates


    OCR Scan     		PDF HMF-06100 HMF06100

    LA1132

    Abstract: DD01F LA1135
    Text: SANYO SEMICONDUCTOR “cu vÔ» ,R P. ^ ~ r^ Ë |7 W 0 7 t DD01fi35 1 Wfÿz. • . t . 7 7 . / î î -.0 ^ r LAI 130 C IR C U IT D R A W IN G N o .a O O l m o n o l i t h i c l i n e a r IC AM TUNER SYSTEM FOR CAR RADIO Functions ■ RF amp. ■ Detector ■ Mixer


    OCR Scan     		PDF DD01fi35 1150N LA1150) 3060B LA1150N) LA1150: LA1132 DD01F LA1135

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KIA2082F b ip o l a r l in e a r in t e g r a t e d c ir c u it ADVANCED RF PROCESSOR KIA2082F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F


    OCR Scan     		PDF KIA2082F KIA2082F KIA2093F KDV173) 108dB//V KTC2712)

    JFET

    Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
    Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET


    OCR Scan     		PDF 2N3909 2N4340 2N4340 2N3909A 2N3909 2N4341 2N4341 2N3921 2N3921 2N4352 JFET J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302

    2SK1001

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KIA2074F b ip o l a r l in e a r in t e g r a t e d c ir c u it ADVANCED RF PROCESSOR KIA2074F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F


    OCR Scan     		PDF KIA2074F KIA2074F KIA2093F 2SK1001) 2SC2712GR 022/iF 2SK1001

    KTC2712

    Abstract: 2SK1001 jfet cascade trimer VU METER 32 led 1SV237 3SK195 KIA2082F KIA2093F fet cross reference
    Text: KEC KIA2082F SEMICONDUCTOR TECH N ICAL DATA KOREA ELECTRONICS CO.,LTD. BIPOLAR LINEAR INTEGRATED CIRCUIT ADVANCED RF PROCESSOR KIA2082F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F


    OCR Scan     		PDF KIA2082F KIA2082F KIA2093F KDV173) 108dB//V KTC27I2) KTC2712 2SK1001 jfet cascade trimer VU METER 32 led 1SV237 3SK195 fet cross reference