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    Untitled

    Abstract: No abstract text available
    Text: HARRIS H li S E M I C O N D U C T O R 4bE D • 43022^ 00D0213 T ■HMS 1 = 3 1 -3 0 SI HARRIS H M F -0 6 14 0 200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz * Chip Devices are Selected from


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    00D0213 HMF-06140-200 HMF06100-200. PDF

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS HU S E M I C O N D U C T O R HBOSSbT 4bE D 0 0 0 0 2 0 e ? • T -3 » -a 5 [g HARRIS H M F -0 6 110 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from


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    HMF-06110-100 HMF06100-100. uti80 PDF

    HMF06100

    Abstract: "Harris microwave"
    Text: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability


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    PDF

    VP 1176

    Abstract: HMF-06100-200 HMF06100-200
    Text: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers


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    D011A71 F-06140 HMF-06140-200 HMF06100-200. VP 1176 HMF-06100-200 HMF06100-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC HARRIS T'ibMlMS OGllflbñ TT1 bDE D HMF-061 10 -1 0 0 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * 10 dB MAG with +17 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers


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    HMF-061 HMF-06110-100 HMF06100-100. pro63 PDF

    HMF-06100

    Abstract: HMF06100
    Text: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates


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    HMF-06100 HMF06100 PDF