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    RELIABILITY IRF530 Search Results

    RELIABILITY IRF530 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0805HT-8N2TKSC Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    H0402CS-27NXGLW Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    WB1-1TSSD Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    0402CS-36NXJAW Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy
    WB1-1TSSB Coilcraft Inc High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com Visit Coilcraft Inc Buy

    RELIABILITY IRF530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP460Z

    Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
    Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB


    Original     		PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205

    IRFZ44G

    Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
    Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics


    Original     		PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    LTC1968

    Abstract: SMAT70A CMPZ5241B IRF530 LT1641 LT1641-1 LT1641-2 LT4256-1 LT4256-2
    Text: DESIGN FEATURES Versatile 80V Hot Swap Controllers Drive Large MOSFETs; Improve Accuracy and Foldback Current Limiting by Mark Belch Introduction Routine maintenance and upgrades to high reliability computing, networking and telecommunications systems require that new or replacement circuit


    Original     		PDF LT4256 LT4256-1 LT4256-2) LT4256 500mA/DIV 10ms/DIV LT4256-2 LTC1968 SMAT70A CMPZ5241B IRF530 LT1641 LT1641-1 LT1641-2

    mosfet protect

    Abstract: IRF53 design ideas World transistors databook IRF530S LTC4251 LTC4252 LTC4252-1 LTC4253 SMAT70A
    Text: DESIGN FEATURES –48V Hot Swap Controller Offers Comprehensive Protection for by YK Sim and Mitchell Lee Telecom Systems Introduction High performance, high reliability telecom systems employ distributed power modules to generate low voltage, high current supplies from a –48V


    Original     		PDF LTC4251 LTC4251 OT-23 LTC4252 10-pin LTC4253 16-pin mosfet protect IRF53 design ideas World transistors databook IRF530S LTC4252 LTC4252-1 SMAT70A

    MOC207

    Abstract: SMAT70A JW050A1-E JW050A1-E Lucent lt 0702 1N4003 B3100 DN290 FLTR100V10 LT4250
    Text: advertisement Monitor Network Compliant – 48V Power Supplies – Design Note 290 Brendan Whelan Introduction Reliability is a top priority for the designers of modern telephone and communication equipment. Designers take extra care to protect circuitry from failure-causing temperature and voltage changes, employing redundancy


    Original     		PDF DN290 IRF530 B3100 com/go/dnLTC1921 1-800-4-LINEAR. dn290f MOC207 SMAT70A JW050A1-E JW050A1-E Lucent lt 0702 1N4003 B3100 FLTR100V10 LT4250

    IRFIBC44LC

    Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
    Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219


    Original     		PDF

    IRF530S

    Abstract: SiHF530S SiHF530S-E3 910-20-11
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11

    IRF530 vishay

    Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 O-220 O-220 18-Jul-08 IRF530 vishay IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P

    IRF530

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 O-220 O-220 12-Mar-07 IRF530

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    cds photo diode

    Abstract: IRF530 marking
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 cds photo diode IRF530 marking

    IRF530S

    Abstract: No abstract text available
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature


    Original     		PDF IRF530S, SiHF530S 2002/95/EC O-263) 11-Mar-11 IRF530S

    IRF530S

    Abstract: No abstract text available
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature


    Original     		PDF IRF530S, SiHF530S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRF530S

    irf530

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF530/531 IRF530 IRF531 Q02fl755 irf530

    D84DL2

    Abstract: IRF530 N-Channel fet
    Text: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.


    OCR Scan     		PDF IRF530 D84DL2 100ms TC-25Â IRF530/D84DL2 IRF531/D84DK2 N-Channel fet

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    power MOSFET IRF740 driver circuit

    Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
    Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can


    OCR Scan     		PDF