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    REGULATOR K35 Search Results

    REGULATOR K35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    REGULATOR K35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RP112N321D

    Abstract: No abstract text available
    Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,


    Original     		RP112x 150mA EA-258-131024 10kHz 100kHz. Room403, Room109, 10F-1, RP112N321D PDF

    K95 Package

    Abstract: TK721 K75 Package diode k70 tk72175
    Text: APPLICATION MANUAL Negative-input Negative-output Regulator IC TK721xxCS CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 5. ORDERING INFORMATION 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


    Original     		TK721xxCS GC3-K020C TK721xxCS 150mA K95 Package TK721 K75 Package diode k70 tk72175 PDF

    k55 diode

    Abstract: diode k70 TK721 TK72160Cs TK72150 TK72130 TK721XXC
    Text: APPLICATION MANUAL Negative-input Negative-output Regulator IC TK721xxCS CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 5. ORDERING INFORMATION 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


    Original     		TK721xxCS GC3-K020B TK721xxCS k55 diode diode k70 TK721 TK72160Cs TK72150 TK72130 TK721XXC PDF

    K3561

    Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.)


    Original     		2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet PDF

    transistor k3567

    Abstract: k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.)


    Original     		2SK3567 transistor k3567 k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC PDF

    k3564

    Abstract: transistor K3564 2SK3564
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 2SK3564 PDF

    transistor K3565

    Abstract: K3565 transistor K3565 compatible transistor
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3565 transistor K3565 K3565 transistor K3565 compatible transistor PDF

    K3566

    Abstract: K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent PDF

    K3561

    Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application PDF

    2SK3538

    Abstract: No abstract text available
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3538 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) ·


    Original     		2SK3538 2SK3538 PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications PDF

    transistor K3565

    Abstract: k3565 k3565 transistor K3565 data 2SK3565 K3565 compatible transistor K356
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3565 transistor K3565 k3565 k3565 transistor K3565 data 2SK3565 K3565 compatible transistor K356 PDF

    transistor compatible k3568

    Abstract: k3568 transistor k3568 K3568 data 2SK3568 K3568 equivalent 2SK3568 equivalent k3568 transistor 2sk3568 datasheet
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3568 transistor compatible k3568 k3568 transistor k3568 K3568 data 2SK3568 K3568 equivalent 2SK3568 equivalent k3568 transistor 2sk3568 datasheet PDF

    2SK3544

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		2SK3544 2SK3544 PDF

    K3566

    Abstract: K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566 PDF

    2SK3544

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		2SK3544 2SK3544 PDF

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF

    K3538

    Abstract: 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK3538 K3538 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC PDF

    2SK3544

    Abstract: No abstract text available
    Text: 2SK3544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3544 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		2SK3544 2SK3544 PDF

    k3564

    Abstract: No abstract text available
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 PDF

    k3564

    Abstract: transistor K3564 K356 2SK35
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 K356 2SK35 PDF

    2SK3544

    Abstract: marking code 346
    Text: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)


    Original     		2SK3544 2SK3544 marking code 346 PDF

    2sk3562

    Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
    Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 PDF

    a38v

    Abstract: j251 VOLTAGE REGULATOR 230V circuit diagram 1251C Used Electronics
    Text: KA79LXXA FIXED VOLTAGE REGULATOR NEGATIVE 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATORS TO-92 These regulator* employ internal current limiting and thermal - shutdown, making them essentially in­ destructible. FEATURES • • • • Output current up to 100mA


    OCR Scan     		KA79LXXA 100mA KA79LXXAZ tt51C KA78LXXA a38v j251 VOLTAGE REGULATOR 230V circuit diagram 1251C Used Electronics PDF